SEPTEMBER1996 Search Results

hp5385a

Abstract: DCS-1800 LMX2335L LMX2336L OPERATING INSTRUCTIONS NATIONAL SEMICONDUCTOR LMX2336L EVALUATION BOARD LMX2336L LMX2335LTMX
Contextual Info: t ß GOfibfifi? bl4 National ADVANCE INFORMATION September1996 Semiconductor LMX2335L/LMX2336L PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications LMX2335L LMX2336L 1.1 GHz/1.1 GHz 2.0 GHz/1.1 GHz General Description The LMX2335L and LMX2336L are monolithic, integrated

TLC2254

Abstract: TLC2254A TLC2254AID TLC2254AMFK TLC2254CD TLC2254ID TLC2254MFK TLC2254Y 40401-803 tlc22541
Contextual Info: TLC2254, TLC2254A, TLC2254Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW POWER QUADRUPLE OPERATIONAL AMPLIFIERS SLOS142B – DECEMBER 1994 – REVISED SEPTEMBER1996 D D D D D Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz

KM68BV4002

Contextual Info: KM68BV4002 CMOS SRAM 512K x 8Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12:170mA(Max.)

VNW100N04

Contextual Info: VNW100N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET Table 1. General Features Figure 1. Package Type Vclamp RDS on Ilim VNW100N04 42 V 0.012 Ω 100 A • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP

AN874

Abstract: DTV110D DTV64D DTV82D
Contextual Info: AN874 APPLICATION NOTE HIGH FREQUENCIES DAMPER DIODES INTRODUCTION The trend in new monitors is for ever increasing switching frequencies of the horizontal deflection stage: 64kHz to 110kHz. ST has developed new 1500V Damper diodes DTV64D-DTV82D-DTV110D using a new silicon structure

KM68B4002J-12

Abstract: KM68B4002J-15
Contextual Info: KM68B4002 CMOS SRAM 512 K x 8Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max) (CMOS): 30 mA(Max.) Operating KM68B4002J-12:195mA(Max.) KM68B4002J-13:195 mA(Max.)

Contextual Info: KM64BV4002 CMOS SRAM 1Mx4Bit With /OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)

E4001

Abstract: pin diagram of 7420
Contextual Info: 128K x 32 EEPROM Module mosaic PUMA 2E4001-15/ 17/20 Issue 4.1 : September 1996 semiconductor, inc. Description The PUMA 2E4001 is a 4Mbit CMOS EEPROM organised as 128k x 32 in a 66 pin PGA ceramic package. Access times of 150, 170 and 200ns are available. The device has a user configurable output

EQUIVALENT TRANSISTOR bc547

Abstract: SHRINK56 TRANSISTOR c104 transistor c114 chip STV0042 STV0056A twin lnb 243-kHz SEL5618
Contextual Info: STV0056A SATELLITE SOUND AND VIDEO PROCESSOR SOUND • TWO INDEPENDENT SOUND DEMODULATORS ■ PLL DEMODULATION WITH 5-10MHz FREQUENCY SYNTHESIS ■ PROGRAMMABLE FM DEMODULATOR BANDWIDTH ACCOMODATING FM DEVIATIONS FROM ±30kHz TILL ±400kHz ■ PROGRAMMABLE 50/75µs, J17 OR NO

3hM22

Abstract: pin configuration of 8251 KM64BV4002J-12 KM64BV4002J-15
Contextual Info: KM64BV4002 CMOS SRAM 1Mx4Bit With / OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)

A13j

Abstract: 3b711 KM616BV4002 KM616BV4002J
Contextual Info: KM616BV4002 CMOS SRAM 256K x16B it High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM616BV4002-12:240mA(Max.)

Contextual Info: KM616B4002 CMOS SRAM 256K x 16Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS) : 30 mA(Max.) Operating KM616B4002J -12 :270 mA(Max.) KM616B4002J -13 :26 5 mA(Max.)

Contextual Info: KM68B4002 CMOS SRAM 512K x8B it High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30mA(Max.) Operating KM68B4002J-12:195mA(Max.) KM68B4002J-13:195 mA(Max.)

pulse generator 30hz

Abstract: LV14 TEA2037A TEA2117 D1N4002 TEA2037 1N4002 1N4003 1N4148 12 pin flyback monitor
Contextual Info: TEA2037A HORIZONTAL AND VERTICAL DEFLECTION MONITOR FEATURES SUMMARY • DIRECT LINE DARLINGTON DRIVE Figure 1. Package ■ DIRECT FRAME-YOKE DRIVE ± 1A ■ COMPOSITE VIDEO SIGNAL INPUT CAPABILITY ■ FRAME OUTPUT PROTECTION AGAINST SHORT CIRCUITS ■ PLL

VNW100N04

Contextual Info: VNW100N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET Table 1. General Features Figure 1. Package Type Vclamp RDS on Ilim VNW100N04 42 V 0.012 Ω 100 A • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP

TRANSISTOR c104

Abstract: videocrypt STV0042 STV0056A TP50A op-amp VCA RF SHRINK56 Amploc
Contextual Info: STV0056A SATELLITE SOUND AND VIDEO PROCESSOR Figure 1. Package SOUND • TWO INDEPENDENT SOUND DEMODULATORS ■ PLL DEMODULATION WITH 5-10MHz FREQUENCY SYNTHESIS ■ PROGRAMMABLE FM DEMODULATOR BANDWIDTH ACCOMODATING FM DEVIATIONS FROM ±30kHz TILL ±400kHz

TEA2037A

Abstract: 1N4002 1N4003 1N4148 LV14 TEA2117 P418K
Contextual Info: TEA2037A HORIZONTAL AND VERTICAL DEFLECTION MONITOR FEATURES SUMMARY • DIRECT LINE DARLINGTON DRIVE Figure 1. Package ■ DIRECT FRAME-YOKE DRIVE ± 1A ■ COMPOSITE VIDEO SIGNAL INPUT CAPABILITY ■ FRAME OUTPUT PROTECTION AGAINST SHORT CIRCUITS ■ PLL

Contextual Info: KM616B4002 CMOS SRAM 256K x 16Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS) : 30 mA(Max.) Operating KM616B4002J -12:270 mA(Max.) KM616B4002J -13:265 mA(Max.)

Contextual Info: KM68BV4002 CMOS SRAM 512K x8B it High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) ; 60mA(Max.) (CMOS): 30mA(Max.) Operating KM68BV4002-12:170mA(Max.) KM68BV4002 -13:165 mA(Max.)