KM68BV4002 Search Results

KM68BV4002

Contextual Info: KM68BV4002 BiCMOS SRAM D o cu m e n t Title 512K x8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory R em ark R ev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.

KM68BV4002

Abstract: KM68BV4002J-12 KM68BV4002J-15 36-SOJ ttl 74142
Contextual Info: Advanced Information KM68BV4002 BiCMOS SRAM 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM68BV4002J-12: 165mA(Max.)

KM68BV4002

Contextual Info: KM68BV4002 CMOS SRAM 512K x 8Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12:170mA(Max.)

Contextual Info: BiCMOS SRAM KM68BV4002 Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. R evision H istory RevNo. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target

Contextual Info: KM68BV4002 BiCMOS SRAM 512K x 8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Time 12,13,15ns{Max.) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM68BV4002 - 1 2 : 170mA(Max.)

KM68BV4002

Abstract: KM68BV4002-15
Contextual Info: KM68BV4002 BiCMOS SRAM 512K x 8 Bit High Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) » Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12 :170 mA(Max.)

TTL-60

Contextual Info: KM68BV4002 BiCMOS SRAM 5 12K x 8 Bit High Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION •F a s t Access Time 12,13,15 ns(Max ) The KM68BV4002 is a 4,194,304-bit high-speed*Static • Low Power Dissipation Random Access M em ory organized as 524,288 words

KM68BV4002J-12

Abstract: KM68BV4002 KM68BV4002J-20 km68bv4002j 36SOJ
Contextual Info: Advanced Information BiCMOS SRAM KM68BV4002 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM 3.3V Operating GENERAL DESCRIPTION FEATURES • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM68BV4002J-12: 165mA(Max.)

Contextual Info: KM68BV4002 BiCMOS SRAM 512 K x 8 Bit High Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) The KM68BV4002 is a 4,194,304-bit high-speed Static

KM68BV4002J-12

Contextual Info: PRELIMINARY KM68BV4002 BiCMOS SRAM 512Kx 8 Bit High Speed BiCMOS Static RAM 3.3 V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) The KM68BV4002 is a 4,194,304-bit high-speed Static

Contextual Info: Advanced Information KM68BV4002 BiCMOS SRAM 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM 68B V4002J-12: 165mA(Max.)

Contextual Info: KM68BV4002 BiCMOS SRAM D ocum ent Title 512Kx8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision H istory Rev No. Historv Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target

Contextual Info: KM68BV4002 CMOS SRAM 512K x8B it High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) ; 60mA(Max.) (CMOS): 30mA(Max.) Operating KM68BV4002-12:170mA(Max.) KM68BV4002 -13:165 mA(Max.)

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

KM616V4002A

Abstract: 6161002 ER255 KM732V589
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Guide. 11 2. Ordering Inform ation. 15

SOJ 44

Abstract: 1MX1 KM6865
Contextual Info: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001

KM736V789-60

Abstract: 512k*8 sram KM68U4000A
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

KM616U1000BL-L

Contextual Info: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI

KM68512

Abstract: 12BKX8 km6865b
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258