KM64BV4002 Search Results

KM64BV4002J-12

Abstract: KM64BV4002J-15 KM64BV4002J-20
Contextual Info: Advanced Information BiCMOS SRAM KM64BV4002 1,048,576 WORD x 4 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES • Fast Access Time : 12 ,1 5 , 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM 64B V4002J-12: 155mA(Max.)

Contextual Info: KM64BV4002 BiCMOS SRAM 1M x 4 Bit With UE High-Speed BiCMOS Static RAM(3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002-12 : 160mA(Max.)

Contextual Info: KM64BV4002 CMOS SRAM 1Mx4Bit With /OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)

Contextual Info: KM64BV4002 BiCMOS SRAM 1M x 4 Bit With (JE High-Speed BiCMOS Static RAM(3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002-12 : 160mA(Max.)

SS24V

Contextual Info: Advanced Information KM64BV4002_ BiCMOS SRAM 1,048,576 WORD x4B it High-Speed BiCMOS Static RAM 3.3VOperating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.)

Contextual Info: KM64BV4002 BiCMOS SRAM Document Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 DesignTarget

3hM22

Abstract: pin configuration of 8251 KM64BV4002J-12 KM64BV4002J-15
Contextual Info: KM64BV4002 CMOS SRAM 1Mx4Bit With / OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)

KM64BV4002J-12

Abstract: KM64BV4002J-15 KM64BV4002J-20
Contextual Info: PRELIMINARY BiCMOS SRAM KM64BV4002 1 M x 4 Bit With OE High-Speed BiCMOS Static R AM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12 : 160 mA(Max.)

Contextual Info: KM64BV4002 BiCMOS SRAM Document Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

Contextual Info: PRELIMINARY BiCMOS SRAM KM64BV4002 1 M x 4 Bit With OE High-Speed BiCMOS Static R AM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12 :160 mA(Max.)

Contextual Info: KM64BV4002 BiCMOS SRAM D ocum ent Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial Temperature Range. Revision H istory Rev No. Historv Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993

Contextual Info: KM64BV4002 BiCMOS SRAM 1M x 4 Bit With OE High-Speed BiCM OS Static R A M (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002-12 : 160m A (M ax.)

SRAM sheet samsung

Contextual Info: KM64BV4002 BiCMOS SRAM D o cu m e n t Title 1Mx4 Bit with OE High Speed Static RAM (3.3V Operating), Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory R em ark Rev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.

Contextual Info: Advanced Information BiCMOS SRAM KM64BV4002 1,048,576 WORD X 4 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM64BV4002J-12: 155mA(Max.)

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

KM616V4002A

Abstract: 6161002 ER255 KM732V589
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Guide. 11 2. Ordering Inform ation. 15

SOJ 44

Abstract: 1MX1 KM6865
Contextual Info: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001

KM736V789-60

Abstract: 512k*8 sram KM68U4000A
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

KM616U1000BL-L

Contextual Info: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI

KM68512

Abstract: 12BKX8 km6865b
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258