KM616B4002 Search Results

Contextual Info: BiCMOS SRAM KM616B4002 256K x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION The KM616B4002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The KM616B4002 uses 16 com mon input and output lines and has an output enable pin w hich operates

Contextual Info: KM616B4002 BiCMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target

Contextual Info: BiCMOS SRAM KM616B4002 Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 D e sig n T a rg e t

Contextual Info: BiCMOS SRAM KM616B4002 256K x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM616B4002-12 : 270 mA(Max.) KM616B4002-13:265 mA(Max.)

Contextual Info: PRELIMINARY BiCMOS SRAM KM616B4002 256Kx 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 10,12,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS) : 30 mA(Max.) Operating KM 616B4002J-10 : 280 mA(Max.)

Contextual Info: KM616B4002 BiCMOS SRAM 256K x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 3 ,1 5 ns M ax. • Low Pow er Dissipation Standby (TTL) : 6 0 m A (M ax.) T h e K M 6 1 6 B 4 0 0 2 is a 4 ,1 9 4 ,3 0 4 -b it high-speed Static

Contextual Info: KM616B4002 CMOS SRAM 256K x 16Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS) : 30 mA(Max.) Operating KM616B4002J -12 :270 mA(Max.) KM616B4002J -13 :26 5 mA(Max.)

Contextual Info: PRELIMINARY KM616B4002 BiCMOS SRAM 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM616B4002J-10: 280mA(Max.) KM616B4002J-12: 270mA(Max.)

Contextual Info: PRELIMINARY BiCMOS SRAM KM616B4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60 mA (CMOS) : 30mA Operating KM616B4002J-10 : 280mA(Max.)

KM616B4002J

Abstract: SRAM 10ns
Contextual Info: PRELIMINARY BiCMOS SRAM KM616B4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60 mA (CMOS) : 30mA Operating K M 616B 4002J-10: 280mA(Max.)

KM616B4002

Abstract: SRAM sheet samsung 512X16 sram
Contextual Info: KM616B4002 BiCMOS SRAM D o cu m e n t Title 256Kx16 Bit High Speed Static RAM 5V O perating , Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory D raft Data R em ark R ev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.

Contextual Info: KM616B4002 BiCMOS SRAM 256Kx 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15ns Max. • Law Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 3QmA(Max.) Operating KM 816B4002-12 : 270mA(Max ) KM616B4002 -1 3 : 265mA(Max.)

Contextual Info: KM616B4002 CMOS SRAM 256K x 16Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS) : 30 mA(Max.) Operating KM616B4002J -12:270 mA(Max.) KM616B4002J -13:265 mA(Max.)

Contextual Info: BiCMOS SRAM KM616B4002 Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

Contextual Info: Advanced Information BiCMOS SRAM KM616BV4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM616BV4002J-12 :175mA(Max.)

KM616V4002A

Abstract: 6161002 ER255 KM732V589
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Guide. 11 2. Ordering Inform ation. 15

SOJ 44

Abstract: 1MX1 KM6865
Contextual Info: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001

KO10

Contextual Info: Advanced Information KM616BV4002 BiCMOS SRAM 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby fTTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM616BV4002J-12 :175mA(Max.)

KM736V789-60

Abstract: 512k*8 sram KM68U4000A
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -

KM616BV4002J-15

Abstract: KM616BV4002 KM616BV4002J-12 KM616BV4002J-20 II06 A16-A17
Contextual Info: Advanced Information BiCMOS SRAM KM616BV4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 1 2 ,1 5 ,20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM616BV4002J-12 :175m A(Max.)

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

KM616U1000BL-L

Contextual Info: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI

KM68512

Abstract: 12BKX8 km6865b
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs