B35337 Search Results

Contextual Info: MOSAIC SEMICONDUCTOR INC S3E D Wk b35337^ DDG1SS1 TbT • MOC 256 K x 8 SRAM moxaic M S 825 6R K X A -8 5 /1 0 /1 2 /1 5 Issue 1.0: June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition vcc AO

Contextual Info: MOSAIC SEMICONDUCTOR INC S3E D • b35337T D001B3fl 525 « M O C 256K x 8 CMOS SRAM molaic M S M 8 2 5 6 -4 5 /5 5 /7 0 Issue 2.1 :August 1992 M osaic PRELIMINARY Sem iconductor Inc. r 262,144 x 8 CMOS High Speed Static RAM A Pin Definition Package Type ‘S \V

Contextual Info: MOSAIC SEMICONDUCTOR INC MOE » El b35337^ 0Q00S47 b &MO.C T ^ C ,-2 Z -H PUMA 3S4000 PUMA 3S4000-35/45/55 Issue 1.0 ¡O cto b e r 1990 Mosaic Sem iconductor In c Pin Definition 4,194,304 bit CMOS High Speed Static RAM Features Very Fast Access times of 35/45/55 ns.

Contextual Info: mosaic 512K x 32 FLASH MODULE PUMA 2/67/77F16006/A-80/90/12/15 semiconductor, inc. Issue 4 .0 : Novem ber 1996 Description Features Mosaic offers a flexible range of high density • 16 Megabit CMOS 5.0V operation only FLASH • Modules in industry standard packages. These

Contextual Info: 32Kx 32 EEPROM Module mosaic PUMA67E1001/A-90/12 Issue4.0: February 1996 semiconductor, inc. Description ThePUMA67E1001/AisalMbitCMOS EEPROM module in a JEDEC 68 pin J leaded Ceramic Surface Mount Substrate. Accesstimes of90and 120 ns are available.Theoutputwidth is

LM 7420

Contextual Info: 512K x 8 FLASH mosaic MFM8516-80/90/12/15 Issue 4.1: March 1997 semiconductor, inc. 524,288 bit FLASH EEPROM Features Description • 4 Megabit FLASH memory. The MFM8516 is a 4 Megabit CMOS 5.0V only FLASH Monolithic memory organised as 512K X 8. Access times of 80, 90,120 and 150 ns are

67S4000A

Abstract: 3D-30 A45 so
Contextual Info: mosaic 128KX 3 2 SRAM Module PUMA67S4000/A-45/55/70 semiconductor, inc. Issue 4.0: March 1996 4,194,304 bit CMOS High Speed Static RAM Description The PUMA67S4000/A is a 4Mbit CMOS High Speed Static RAM organised as 128kx 32 in a JEDECJ-leaded Ceramic Surface Mount

7420 ic details

Abstract: pin diagram ic 7420 IC 7420 function ic 4026 IC 4026 pin diagram 7420 ic
Contextual Info: 32K X 8 EEPROM mosaic MEM832-20/25 Issue 4.1 : June 1996 semiconductor, inc. 32,768 x 8 Non-volatile CMOS EEPROM Description The MEM832 is a 262,144 bit Non-Volatile CMOS EEPROM organised as a 32K x 8 with access times of 200 or 250 ns. The device features hardware and software data

11A9

Abstract: MSM8128
Contextual Info: mosaic 128K x 8 SRAM MSM8128-45/55 semiconductor, inc. Issue 4.1 : JUNE 1996 131,072 x 8 CMOS High Speed Static RAM Description ^ Features The MSM8128 is a 1Mbit monolithic SRAM organised as 128Kx8 available wiith access times of 45 / 55 ns. The device is available in three

cl01-12

Abstract: CZ001
Contextual Info: 32K X 8 SRAM m o l a t e MSM832-45/55/70 Issue 2.2 : October 1993 PRELIMINARY S e m ic o n d u c to r Ine Pin Definition 32,768 x 8 CMOS High Speed Static RAM Package Type: 'G \ 'S', T , 'V Features A14 1 A12 2 A7 3 A6 4 A5 s A4 6 A3 7 A2 8 A1 9 AO 10 Access Times of 45/55/70 ns

ci 7420

Contextual Info: mosaic 128Kx 32 FLASH MODULE PUMA2F4001-15/17/20 Issue4.0: July 1995 semiconductor, inc. Description 4,194,304 bit CMOS FLASH Memory Module The PUMA 2F4001 is a 4 M b it CMOS 5.0V only FLASH memory in a 66 pin ceramic PGA pack­ age, which is configerable as 8 , 1 6 , 3 2 bit wide

D1758

Abstract: D2253 G0027
Contextual Info: /2 ^ ^ > mosaic 512K x 32 SRAM MODULE PUMA 2/67/77S16000/A-025/35/45/55 Issue 4.0 : Novem ber 1996 semiconductor, inc. b 3 S 3 3 7 T DDD2771 ISSUE4.0 : JANUARY 1996 PUMA2S16000025/35/45/55 DC OPERATING

P 600 I 1903

Abstract: moc 4-pin
Contextual Info: MOSAIC SEMICONDUCTOR INC hHE D • b a S B a ? 1! 000E057 SOS ■ M O C 128KX 32 EEPROM MODULE molate PUMA 67E4000X-15/20/25 Issue 1.2: Septembed 993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc " 4,194,304 bit MNOS High Speed EEPROM Features •

E4001

Abstract: pin diagram of 7420
Contextual Info: 128K x 32 EEPROM Module mosaic PUMA 2E4001-15/ 17/20 Issue 4.1 : September 1996 semiconductor, inc. Description The PUMA 2E4001 is a 4Mbit CMOS EEPROM organised as 128k x 32 in a 66 pin PGA ceramic package. Access times of 150, 170 and 200ns are available. The device has a user configurable output

Contextual Info: 128Kx 32 EEPROM Module mosaic PUMA67E4001/A-12/15/17/20 Issue4.2 : June 1996 semiconductor, inc. Description 4,194,304bitCMOS EEPROM Module ThePUMA67E4001/Aisa4MbitCMOS EEPROM module in a JEDEC 68 pin J leaded Ceramic Surface Mount Substrate. Accesstimes of 120,150,170and200nsareavailable.The

Contextual Info: mosaic 128Kx 32 FLASH MODULE semiconductor, inc. f PUMA 68F4001-15/17/20 Issue 4.1 .August 1997 Description Features The PUMA 68F4001 is a 4Mbit CMOS FLASH memory module organised as 128K x 32 in a JEDEC 68 pin surface mount PLCC, available with access times of 150, 170 and 200ns. The output

Contextual Info: 128Kx 32 FLASH Module molaic PUMA 2F4001 -12/15/20 Issue 1.1 rNovember 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r 4,194,304 bit CMOS FLASH Memory Pin Definition Features 1 o 08 o 09 o 010 o A14 o A16 o A11 o Access Times of 120 /150 /200 User Configurable as 8 / 1 6 / 3 2 bit wide output.

Contextual Info: mosaic / f a — ^ 3 2 K x 3 2 SRAM M O D U LE semiconductor, inc. PUMA2S1000-025/35/45 Issue4.1 : February 1996 Description The PUMA 2S1000 is a 1Mbit high speed static RAM organised as 32K x 32 in a 66 pin ceramic PGA package. Access times of 25ns, 35ns or

Contextual Info: MFM8T516-90/12/15 mosaic 512K x 8 FLASH Issue 4.2 June 1996 semiconductor, inc. 524,288 bit FLASH EEPROM Description Features The MFM8T516 is a 4 Megabit CMOS 5.0V only • FLASH Monolithic memory organised as 512K X 8. • Access times of 90 ,1 20 and 150 ns are available.

Contextual Info: PUMA 3FI6006-90/12/15 mosaic semiconductor, inc. 512K X 32 FLASH MODULE Issue 4.0 August 1995 Description The PUMA. 3F16006 is a 16 Megabit CMOS 5.0V only FLASH Module in a 6 6 pin PGA package, lAfoich is configurable as 8 , 16, 32 bit wide using CE1-4. Access times of 90, 120 and 150 ns are

Contextual Info: MOSAIC SEMICONDUCTOR INC IMOC basaB?^ oooibib s'ìa S3E J> T-46-13-29 molate PUMA 2U4002-45/55/70/90 Issue 1.0 : February 1990 ADVANCE PRODUCT INFORMATION Mosaic Semiconductor Inc 4,194,304 bit CMOS High Speed UVEPROM Pin Definition Features 1 o o o o o o

d2539

Abstract: D1959 A3S33 al puma
Contextual Info: MOSAIC S E M I C O N D U C T O R INC 40E D EB a3S33?T 0 0 0 0 S 7 7 4 ^jNOC 7 ^ V 6 -/? - 2 ? PUMA 2U400Q PUMA 2U4000-90/12/15 Issue 1.0 : November 1990 Mosaic Samtconduclor Inc. ADVANCE PRODUCT INFORMATION /" ~ ' Pin Definition 4,194,304 bit CMOS High Speed UV EPROM

Contextual Info: 4Meg x 1 Monolithic DRAM molate M DM 14000-80/10/12 Issue 3.2 : September 1993 S e m ic o n d u c to r 4,194,304 x 1 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns Available in 20 Pin DIP,20 & 24 Pin VIL 5 Volt Supply ±10% 1024 Refresh Cycles 16 ms

Contextual Info: MOSAIC S E M I C O N D U C T O R INC LIE ]> h 35337•= D D G n ? 2 QbT * M O C 128K X 8 SRAM Module moXaic PUMA 67S4000-85/10/12 Issue 1.0 : January 1993 ADVANCE PRODUCT INFORMATION Mosaic Semicondu x- \