0002B42 Search Results

Contextual Info: MFM8T516-90/12/15 mosaic 512K x 8 FLASH Issue 4.2 June 1996 semiconductor, inc. 524,288 bit FLASH EEPROM Description Features The MFM8T516 is a 4 Megabit CMOS 5.0V only • FLASH Monolithic memory organised as 512K X 8. • Access times of 90 ,1 20 and 150 ns are available.

CXK58257P

Abstract: SONY CX 12LU Sony 187 sony cxk58257m-12l
Contextual Info: SONY CORP/COMPONENT PRODS HTE 1> Ô3Ô2363 CXK58257P/SP/M SONY üüOBb37 5 WSONY 70L/85L/10L/12L 70LL/85LL/10LL/12LL 32768-word X 8 bit High Speed CMOS Static RAM Package Outline Description Unit: mm CXK58257P/SP/M is a 2 6 2 ,1 4 4 bits high speed CMOS static RAM organized as 3 2 ,7 6 8 words by

RAS 0510 connection diagram

Abstract: RAS 0510 GoldStar GM71C4256 GM71C4256-12 GM71C4256-85 40267 GOLDSTAR TECHNOLOGY INC
Contextual Info: G O L D S T A R T E C H N O L O G Y INC/ 51E D • 4G2fl?S7 OGQ5S7t, 4 ■ PRELIMINARY SPECIFICATION GoldStar GOLD STAR CO., LTD. GM71C4256 262,144 WORDS X 4 BIT CMOS DYNAMIC RAM Description Pin Configuration The GM71C4256 is the new generation dynamic RAM