hc589ag
Abstract: 74HC589 HC589a MC74HC589ANG HC589 74HC589A MC74HC589ADG
Contextual Info: MC74HC589A 8-Bit Serial or Parallel-Input/Serial-Output Shift Register with 3-State Output http://onsemi.com High−Performance Silicon−Gate CMOS The MC74HC589A device consists of an 8−bit storage latch which feeds parallel data to an 8−bit shift register. Data can also be loaded
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mc74hc589ahc589apdip-16mc74hc589an+7mc74hc589a/dhc589ag74hc589mc74hc589anghc58974hc589amc74hc589adg
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29F080
Abstract: S29F080
Contextual Info: Preliminary information Features • O rg a n iz a tio n : 1M x 8 • S ecto r a rc h ite c tu re - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5 .0 ± 0 .5 V p o w e r s u p p ly f o r r e a d / w r ite o p e ra tio n s
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as29f080-90tca529f080-90tias29f080-90sca529f080-90si+8as29f080-as29f080-120tias29f080-12oscas29f080-120sias29f080-is0tcas29f080-i50ti29f080s29f080
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HC589A
Abstract: 74HC589 MC74HC589ADG 74HC589A 948F MC74HC589A MC74HC589AD MC74HC589AN MC74HC589ANG
Contextual Info: MC74HC589A 8−Bit Serial or Parallel−Input/Serial−Output Shift Register with 3−State Output http://onsemi.com High−Performance Silicon−Gate CMOS The MC74HC589A device consists of an 8−bit storage latch which feeds parallel data to an 8−bit shift register. Data can also be loaded
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mc74hc589ahc589apdip-16mc74hc589an+7mc74hc589a/d74hc589mc74hc589adg74hc589a948fmc74hc589admc74hc589ang
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HC589A
Abstract: marking 589A
Contextual Info: MC74HC589A 8−Bit Serial or Parallel−Input/Serial−Output Shift Register with 3−State Output High−Performance Silicon−Gate CMOS http://onsemi.com The MC74HC589A device consists of an 8−bit storage latch which feeds parallel data to an 8−bit shift register. Data can also be loaded
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mc74hc589ahc589apdip-16mc74hc589an+2so-16marking 589a
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MCP67MV
Abstract: RTS5117 MCP67MV- A2 12VSUS IT8511TE D1703 D1804 D1803 asus F9DC
Contextual Info: 5 4 3 2 1 F9DC BLOCK DIAGRAM THERMAL SENSOR G781 BATTERY TYPE Page 5 D D 3S1P 3S2P FAN CTRL Page 5 AC & BAT CON Page 47 CPU S1g1 GDDR2 16Mx16 x4 DDR2 16M*16-2.5 1.8V Page42 INFINEON DDR2 SDRAM 667MHz Page2,3,4 DDR2 667 SODIMM X2 +1.8V +0.9VS Page11,12,13
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16mx16page42page17page18+16667mhzpage11g3-64page40mcp67mdpage24mcp67mvrts5117mcp67mv- a212vsusit8511ted1703d1804d1803asusf9dc
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RTL8211E
Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?
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isl10isl11rtl8211eisl6258a+888e1116rmarvell 88e1116risl6258rtl8211l6703u9701mcp79-b01q7055
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mcp67m
Abstract: MCP67MV MCP67D MCP67MV- A2 c5304 asus nvidia mcp67 MCP67 C9236 ricoh r5c833
Contextual Info: A B C D E A8N_A8Dc AMD/MCP67MV/MCP67D BLOCK DIAGRAM 1 BATTERY TYPE Sub block Diagram / BOM option 1 3S2P 64 POWER SEQENCE 2 . CPU CPU CAP 5 AMD Turion 64 F/G DDR2 533/667/800 SODIMM X2 3,4 LFB 2 LFB LFB HOST BUS DVI Dual CH. 47 CRT & TV CON 46 LFB VGA CON
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amd/mcp67mv/mcp67dmcp67mv/d33mhzfdw2501+12isl6227max8632mcp67mmcp67mvmcp67dmcp67mv- a2c5304asusnvidia mcp67mcp67c9236ricoh r5c833
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RT9713
Abstract: C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU
Contextual Info: VAIL SI2-BUILD-FINAL 2004.08.31 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : VAIL1.0 SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX2 67 TABLE OF CONTENTS
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v/5v/12v31-aug-2004cn6035rt9713+9c6091c6093r61531c6090c6085c6092inventec vail 1.0inventec070912fr015s200zu
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C8816
Abstract: ricoh r5c833 C2335 IT8510 nvidia nb8 vga board l3404 asus CON61 R5600 D8103
Contextual Info: 5 4 3 2 1 AC_BAT_SYS 0925 +5VO 0925 + Q8200 R8209 4.7Ohm D + 1 D1_1 G1 8 2 D1_2 S1/D2_3 7 3 G2 S1/D2_2 6 4 S2 S1/D2_1 5 G D +1.05VO S Q8201 SI4800BDY @ JP8203 1 C8211 0.1UF/50V MLCC/+/-10% R8206 0Ohm C8213 4.7UF/6.3V MLCC/+/-10% 1 2 TPC28T T8209 TPC28T T8216
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q8200r8209d8202rb717f+16r821710ohmc8213u8200r8206c8211c8816ricoh r5c833c2335it8510nvidia nb8 vga boardl3404asuscon61r5600d8103
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ISL9504
Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT
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isl10isl11isl9504b6886+8pp3v42g3hnvidia g84misl9504bcrzc8050 12vp66 applek50 applem75 mlb 820-2101pp3v42
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ASUS
Abstract: fingerprint rs 306 nvidia nb8 vga board AT24C02B Q2400a Q4500 TMs 1122 NL IT8510 it8511 C5500
Contextual Info: A B C D E A8E/A8S Merom/GM965/PM965 BLOCK DIAGRAM 1 BATTERY TYPE Sub block Diagram / BOM option 1 3S2P 64 CLOCK GEN ICS9LPR363AGLF-T 29 CPU MEROM LFB 2 DVI CH. LFB LFB CPU CAP POWER SEQENCE 2 5 LFB HOST BUS Dual 47 CRT & TV 46 CON . 3,4 VGA CON Nvidia NB8x series
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merom/gm965/pm965ics9lpr363aglf-tgm965/pm965533/667mhz+16control50si9183dtlm358adrisl6227max8632max8743asusfingerprint rs 306nvidia nb8 vga boardat24c02bq2400aq4500tms 1122 nlit8510it8511c5500
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asus
Abstract: FA8142 PT8300 RS690M ATI M76-M m64m H5401 PT8700 M64-M ATXP1 8632e
Contextual Info: 5 4 3 2 1 */E*/I &PSGO MEKVEQ VGA VCORE D AMD CPU S1g1 CPU VCORE PAGE 85 PAGE 80 Clock gen. DDR2-800MHz PAGE 29 Dual Channel DDR2 D SO-DIMM X 2 Power On Sequence Up to 4GB DDRII PAGE 7,8,9 PAGE 32 PAGE 3,4,5 Li-Ion 6 cells:4800mAH,3S2P,53.28W (3S2P;4.2*3=12.6V;2400mAH*2=4800mAH;
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ddr2-800mhz4800mah2400mah7200mah+12638pintl-50/52/56/60asusfa8142pt8300rs690m ati m76-mm64mh5401pt8700m64-matxp18632e
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Contextual Info: MC74HC589A 8-Bit Serial or Parallel-Input/Serial-Output Shift Register with 3-State Output http://onsemi.com High−Performance Silicon−Gate CMOS The MC74HC589A device consists of an 8−bit storage latch which feeds parallel data to an 8−bit shift register. Data can also be loaded
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mc74hc589ahc589apdip-16mc74hc589an+1mc74hc589a/d
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d5023
Abstract: C5027 R d3000 mosfet C5027 r transistor mosfet c5027 equivalent transistor D5023 C6017 Transformer ei33 equivalent of transistor c5027 NEC2501
Contextual Info: Design of an ACIM Vector Control Drive using the 56F8013 Device Designer Reference Manual 56800E 16-bit Digital Signal Controllers DRM075 Rev 1 11/2005 freescale.com Design of an ACIM Vector Control Drive using the 56F8013 Device Designer Reference Manual
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56f801356800e16-bitdrm075+10d5023c5027 rd3000 mosfetc5027 r transistor mosfetc5027equivalent transistor d5023c6017transformer ei33equivalent of transistor c5027nec2501
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U2775B-B
Abstract: U269B-B u269b u4614b-a U6811B-B U2555 u4614 U2390B-F u2775b U2550B1-A
Contextual Info: TELEFUNKEN Semiconductors Quality and Reliability Data TELEFUNKEN Semiconductors Issue: 11.95 TQ02 TQ02 TELEFUNKEN Semiconductors Table of Contents 1. Quality and Reliability Targets . 1
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u842b-au6805b-bu8442b-gu6806b-a+15u847bst-au6810b-au8600b-au6811b-bu860b-bu690b-au2775b-bu269b-bu269bu4614b-au2555u4614u2390b-fu2775bu2550b1-a
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HP R8400
Abstract: IT8511T ASUS C4606 keyboard and touchpad schematic Socket AM2 4609A st d1703 l G72MG3 R8120
Contextual Info: A B C D E F9S SCHEMATIC Revision 1.3 1 1 Content PAGE PAGE SYSTEM PAGE REF. 2 3 4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 CPU-MEROM 1 CPU-MEROM(2) CPU CAP, Thermal Senor
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ics9lpr363cglf-965pm--cpu-965pm--ddr2/peg-965pm--ddr2+15-965pm--power-965pm--gnd/strappingmax8632max1844max8743hp r8400it8511tasusc4606keyboard and touchpad schematicsocket am24609ast d1703 lg72mg3r8120
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TMs 1122 NL
Abstract: C8816 IT8510 ricoh r5c833 t2206 C2335 C4622 RTL811B C8208 L3404
Contextual Info: A B C D E A8E/A8S Merom/GM965/PM965 BLOCK DIAGRAM 1 BATTERY TYPE Sub block Diagram / BOM option 1 3S2P 64 CLOCK GEN ICS9LPR363AGLF-T 29 CPU MEROM LFB 2 LFB CPU CAP POWER SEQENCE 2 5 LFB HOST BUS DVI Dual CH. 47 CRT & TV CON 46 LFB . 3,4 VGA CON Nvidia NB8x series
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merom/gm965/pm965ics9lpr363aglf-tgm965/pm965533/667mhz+16control50si9183dtlm358adrisl6227max8632max8743tms 1122 nlc8816it8510ricoh r5c833t2206c2335c4622rtl811bc8208l3404
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asus F3J inverter
Abstract: T3509 schematic asus f3j inverter ALC660 asus f3j c2406 diode R5538D001 asus F3J Power inverter C2407 ASUS
Contextual Info: A B C D E F2J SCHEMATIC R11 ER Content PAGE 1 2 3 4 PAGE SYSTEM PAGE REF. 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 YONAH CPU (1) YONAH CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN.
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rtl8111basus f3j invertert3509schematic asus f3j inverter+7alc660asus f3jc2406 dioder5538d001asus f3j power inverterc2407asus
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d2539
Abstract: D1959 A3S33 al puma
Contextual Info: MOSAIC S E M I C O N D U C T O R INC 40E D EB a3S33?T 0 0 0 0 S 7 7 4 ^jNOC 7 ^ V 6 -/? - 2 ? PUMA 2U400Q PUMA U4000-90/12/15 Issue 1.0 : November 1990 Mosaic Samtconduclor Inc. ADVANCE PRODUCT INFORMATION /" ~ ' Pin Definition 4,194,304 bit CMOS High Speed UV EPROM
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a3s332u400q2u4000-90/12/152u4000mb-12+7u4000128kx32ca921212714s6sd2539d1959al puma
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P6M1
Contextual Info: PUMA U4000 molate PU M A 2U400CM2/15 Issue 1.1 : April 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c t o r ine " 4,194,304 bit CMOS High Speed UV EPROM \ Pin Definition Features Fast Access times of 120/150 ns Pin grid array gives 2:1 improvement over DIL.
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2u40002u400cm2/15mil-std-883u4000+1p6m1
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Contextual Info: / 2^ < ^ mosaic P U M A U4000 U4000-12/15 semiconductor, inc. Issue4.1 : June 1995 Description 4,194,304 bit CMOS UV EPROM The U4000 is a 4 M bit CMOS High Speed UV EPROM in a 66 pin PGA package with access ti mes of 120ns and 150ns. The output width is userconfigerable a s 8 ,16 or 32
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2u4000puma2u4000-12/15puma2u4000120ns+4150nsmil-std883puma2u4000mb-12u4000
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QF004A
Abstract: he315 HE160B dox5 SMO 365 R he721 sg03 smd diode F6 2D stripline directional couplers LBM700A-85
Contextual Info: A bow ei BOWEI is one o fth e leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and m anufacturing RF/microwavea components for the world's marketplace.BOWEI serves the communication
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12000-square-meteris09000-2000hd-28ahd-28c+13hd-32ahe883he761qf004ahe315he160bdox5smo 365 rhe721sg03smd diode f6 2dstripline directional couplerslbm700a-85
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Contextual Info: H igh perform an ce 512K X 8 5 V CMOS Flash EEPROM n A S29F040 II. II W llh . 5 1 2 K x 8 CM O S Flash EEPROM Preliminary information Features • Low pow er consum ption • Organization: 512K X 8 • Sector architecture • • • • - 3 0 m A m ax im u m read current
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s29f040040-90t-120tc-150tc+4040-55l040-70l040-90l040-150l
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STR S 5741
Abstract: 1599520
Contextual Info: H -B- U P P E R HOUSING C AB LE S T O P PEE :n s i — ü n 3 A— - B e 12 N O T E 5 S E E N O TE llï 5 .6 9 0 .5 0 0 22.61) (17.78) 1 2 Ï 4 .5 8 0 j (14.73) T g PR E LO A D HEIG HT 1 A CKT. SIZE 11 m 1 1.090 22 .9 0 0 2 4 (35.31) (30.48) 1.590 1.400
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