S29F040 Search Results

00D05

Abstract: AS29F040 29F040 29F040-70
Contextual Info: H ig h P e r f o r m a n c e 512KX8 S V C M O S F la s h EEPRO M « II J J i A S29F040 5 1 2 K X 8 CMOS Flash EEPROM Preliminary information Features • Organization: 5 1 2 Kx 8 • Sector architecture • Low pow er consum ption - 30 m A m a x im u m rea d c u rre n t

Contextual Info: H igh perform an ce 512K X 8 5 V CMOS Flash EEPROM n A S29F040 II. II W llh . 5 1 2 K x 8 CM O S Flash EEPROM Preliminary information Features • Low pow er consum ption • Organization: 512K X 8 • Sector architecture • • • • - 3 0 m A m ax im u m read current

Contextual Info: H igh Perform ance S12KX8 SV CMOS Flash EEPROM « A S29F040 II II 512K X 8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512Kx8 • Sector architecture - 30 mA m axim um read current - 60 mA m ax im u m program current

S1998

Abstract: .5555b AS29F040 29F040-70
Contextual Info: H ig h p e r f o r m a n c e S1ZKX8 5 V C M O S F la s h E E PR O M •■ II A S29F040 5 1 2K x 8 CMOS Fiash EEPROM Preliminary information Features • Organization: 512KX8 • Sector architecture • Low pow er consumption - 3 0 m A m axim um read current

s29f

Contextual Info: S29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

Contextual Info: I l i ^ h l*i i loi i n ,iih c S I 2k x X r>V C M O S Ma sh MiPKOM •■ \ S 2 >M 40 A S I ?.KX<S CMOS f ldsli I I f'KOM Preliminary information Features • Low power consumption • Organization: 512KX8 • Sector architecture - 3 0 m A m a x im u m re a d c u rre n t

AS19F

Abstract: 29F2C F002T
Contextual Info: O rd e rin g in fo rm a tio n X Ordering inliirmiii um Asynchronous SRAM port numbering system Package type- P= P D IP I - SO I Voltage: SRAM Blank 5 = 5 V 'C M O S D ensity an d —3 ï V C M O S org an ization Po w e r L LL — L o w pow er Acct ss = V e ry lo w p o w e r

Contextual Info: Preliminary information •■ S29F040 5V 512Kx8 CM OS Flash EE PROM Features • Organization: 51 2 K x8 • Sector architecture - Eight 64K byte sectors - Erase any com bination of sectors or full chip • Single 5.0 ± 0 .5 V pow er supply for read/w rite operations

S29F040

Abstract: TSOP8 ux305
Contextual Info: I t i gl i ’ (1r 11 I' 111 ,i I ]( r SI A \ S Z I 040 | | KxK S V C M O S I l.isli I M ’ K O M I .’ K x H CM O S H u sh I I P H O VI P re lim in a ry in fo rm atio n F eatures • Organization: 512KX8 • Sector architecture • Low power consumption

s2-1040s

Abstract: AS29F040-120LC 29F040 29F040-70 AS29F040 AS29F040-55TC 00D102
Contextual Info: A I I i ” h l'i i l o t i n , n u e •■ S I 1k x X S V C M O S I lash I IP KO M \ S 2 > 1 0 4 0 S I ?. Kx <S CMOS I'ldsli I I FROM Preliminary information Features • Low pow er consumption • Organization: 512KX8 • Sector architecture - 3 0 m A m a x im u m re a d c u rre n t

29VF040

Abstract: TMS29F040 29VF04 SMJS820B
Contextual Info: S29F040 524288 BY 8-BIT FLASH MEMORY SM JS820B - AP R IL 1996 - REVISED N O VEM BER 1997 • • • • Single Power Supply 5 V ± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040

.5555b

Abstract: S29F040 tl4000 29F040-120
Contextual Info: Preliminary infonnation Features • Organization: 512Kx8 • Sector architecture • Low power consumption • Single S.0±0.SV power supply for read/write operations • Sector protection • High speed 55/70/90/120/150 ns address access time • Automated on-chip programming algorithm