S29F080 Search Results

29F080

Abstract: 29F080-90 S-12 AS29F080
Contextual Info: H igh p erform ance •■ A S29F080 IHI 1MX8 5V CMOS Flash EEPROM 1 Mcjjcihil x R C M O S F lash E P R O M Prelim inary inform ation Features • Organization: 1MX8 • Sector architecture • Low pow er consum ption - 30 mA m a x im u m rea d c u rre n t

29F080

Abstract: S29F080
Contextual Info: Preliminary information Features • O rg a n iz a tio n : 1M x 8 • S ecto r a rc h ite c tu re - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5 .0 ± 0 .5 V p o w e r s u p p ly f o r r e a d / w r ite o p e ra tio n s

intel 29F

Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
Contextual Info: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256

Contextual Info: Preliminary information •■ S29F080 A 5V 1Mx 8 CM O S Flash EEPROM Features • Organization: 1Mx 8 • Sector architecture - Sxteen 64Kbyte sectors - Equal sector architecture - Erase any combination o f sectors or full chip • Sngle 5.0±0.5V pow er supply for read/ write operations

AS29F080

Abstract: AS29 29F080 29fu
Contextual Info: Preliminary information •■ S29F080 1 5V 1M x 8 C M O S Flash EEPROM Features • O rg an izatio n : 1M x 8 • Sector arch itectu re - Sixteen 64K b y te sectors - Equal secto r arc h ite ctu re - Erase an y c o m b in a tio n o f sectors o r full chip

29F080

Contextual Info: High p erform an ce lM x 8 5V CMOS Flash EEPROM •■ II II A S 29F080 I \ f c j j a h i i x 8 CMOS Flash E P R O M Preliminary information Features • Organization: 1MX8 • Sector architecture • Low power consumption - 3 0 mA m axim um read current - SO mA m axim um program current

LTS 547 EH

Contextual Info: Preliminary inform ation S29F080 II 5V 1M x 8 CMOS Flash ÜPROM Features • O rganization: 1M x 8 • Sector architecture - Sixteen 64K byte sectors - Equalsectorarchitecture - Erase any com bination o f sectors o r fu ll chip • Single 5 D± 0 5 V pow e r supply ib rread /w rite opeiations

Contextual Info: Preliminary information •■ S29F080 II 5V 1Mx 8 CMOS Flash EEPROM Features • O rganization: 1M x 8 • Sector architecture - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5.0± 0.5V po w er supply for re a d /w rite operations