B3S337 Search Results

DIN 46238

Contextual Info: MOSAIC SEM IC ONDUCTOR INC S3E D b3S337T 0001370 ÔT1 IMOC 7 ^*4 6 -a s -1 \ molate f M e g x 4 M o n o tith ic D R A M Mosaic Semiconductor MDM41000-80/10/12/X0179 Issue 1.0: September 1992 ADVANCE PRODUCT INFORMATION 1,048,576 x 4 CMOS High Speed Dynamic RAM

Contextual Info: mosaic 512K x 32 FLASH MODULE PUMA 2/67/77F16006/A-80/90/12/15 semiconductor, inc. Issue 4 .0 : Novem ber 1996 Description Features Mosaic offers a flexible range of high density • 16 Megabit CMOS 5.0V operation only FLASH • Modules in industry standard packages. These

Contextual Info: 32Kx 32 EEPROM Module mosaic PUMA67E1001/A-90/12 Issue4.0: February 1996 semiconductor, inc. Description ThePUMA67E1001/AisalMbitCMOS EEPROM module in a JEDEC 68 pin J leaded Ceramic Surface Mount Substrate. Accesstimes of90and 120 ns are available.Theoutputwidth is

Contextual Info: 1Meg x 4 Monolithic DRAM m o l a t e MDM41000-80/10/12 Issue 3.3 : October 1993 S e m ic o n d u c to r 1,048,576 x 4 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns 5 Volt Supply ± 10% 1024 Refresh Cycles 16 ms CAS before RAS Refresh

Contextual Info: 512K X 8 SRAM molaic MS8512FK-45/55 Issue 3.1 : September 1993 S e m ic o n d u c to r Pin Definition 524,288 x 8 CMOS High Speed Static RAM Features Very Fast Access Times of 45/55 ns JEDEC Standard 32 pin DIL footprint Operating Power 1050 mW typ. Low Power Standby

Contextual Info: MOSAIC SEMICONDUCTOR INC S3E D Wk b35337^ DDG1SS1 TbT • MOC 256 K x 8 SRAM moxaic M S 825 6R K X A -8 5 /1 0 /1 2 /1 5 Issue 1.0: June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition vcc AO

Contextual Info: MOSAIC SEMICONDUCTOR INC S3E D • b35337T D001B3fl 525 « M O C 256K x 8 CMOS SRAM molaic M S M 8 2 5 6 -4 5 /5 5 /7 0 Issue 2.1 :August 1992 M osaic PRELIMINARY Sem iconductor Inc. r 262,144 x 8 CMOS High Speed Static RAM A Pin Definition Package Type ‘S \V

LM 7420

Contextual Info: 512K x 8 FLASH mosaic MFM8516-80/90/12/15 Issue 4.1: March 1997 semiconductor, inc. 524,288 bit FLASH EEPROM Features Description • 4 Megabit FLASH memory. The MFM8516 is a 4 Megabit CMOS 5.0V only FLASH Monolithic memory organised as 512K X 8. Access times of 80, 90,120 and 150 ns are

7420 ic details

Abstract: pin diagram ic 7420 IC 7420 function ic 4026 IC 4026 pin diagram 7420 ic
Contextual Info: 32K X 8 EEPROM mosaic MEM832-20/25 Issue 4.1 : June 1996 semiconductor, inc. 32,768 x 8 Non-volatile CMOS EEPROM Description The MEM832 is a 262,144 bit Non-Volatile CMOS EEPROM organised as a 32K x 8 with access times of 200 or 250 ns. The device features hardware and software data

11A9

Abstract: MSM8128
Contextual Info: mosaic 128K x 8 SRAM MSM8128-45/55 semiconductor, inc. Issue 4.1 : JUNE 1996 131,072 x 8 CMOS High Speed Static RAM Description ^ Features The MSM8128 is a 1Mbit monolithic SRAM organised as 128Kx8 available wiith access times of 45 / 55 ns. The device is available in three

ci 7420

Contextual Info: mosaic 128Kx 32 FLASH MODULE PUMA2F4001-15/17/20 Issue4.0: July 1995 semiconductor, inc. Description 4,194,304 bit CMOS FLASH Memory Module The PUMA 2F4001 is a 4 M b it CMOS 5.0V only FLASH memory in a 66 pin ceramic PGA pack­ age, which is configerable as 8 , 1 6 , 3 2 bit wide

Contextual Info: MOSAIC S E M I C O N D U C T O R INC 40E D £3 0000323 b M O C T -V C -tt-H 5 i 2 K X 8 SRAM MS8512FK-85/10/12/15 Issue 1.2 : July 1991 Mosaic Semiconductor ADVANCE PRODUCT INFORMATION In c 524,288 x 8 CMOS High Speed Static RAM Features Access Times of 85/100/120/150 ns

02VO

Abstract: T 1892 equivalent
Contextual Info: MOSAIC SEMICONDUCTOR INC 4fc.E D b 3 S 3 3 7 ci o c i a i c m mofaic o b im o c 128KX0 SRAM MSM8128X-45/55/70 Issue 3.1: April 1992 Mosaic Semiconductor f Pin Definition Inc. 131,072 x 8 CMOS High Speed Static RAM Features NC A16 A14 1 2 3 A12 4 5 A7 A6 A5

Contextual Info: PUMA 2F16006-90/12/15 mosaic semiconductor, inc. 512Kx 32 FLASH MODULE Issue 4.0 September 1995 Description Features The PUMA 2F16006 is a 16 Megabit CMOS 5.0V only FLASH Module in a 66 pin PGA package, which is configurable as 8 ,1 6 ,3 2 bit wide using CE1-4. Access times of 90,120 and 150 ns are

Contextual Info: MOSAIC SEMICONDUCTOR INC B 3E D • bBSBBTI G001222 Ibfl ■ HOC T~- H 6 mol aie Í2 8 K X 8 Y SRAM MSM8128X-85/10/12 Issue 3.0 : October 1992 Mosaic Sem iconductor f Pin Definition NC A16 A14 A12 A7 A6 AS A4 A3 A2 A1 AO DO D1 D2 GNO 131,072 X 8 CMOS High Speed Static RAM

Contextual Info: MFM8T516-90/12/15 mosaic 512K x 8 FLASH Issue 4.2 June 1996 semiconductor, inc. 524,288 bit FLASH EEPROM Description Features The MFM8T516 is a 4 Megabit CMOS 5.0V only • FLASH Monolithic memory organised as 512K X 8. • Access times of 90 ,1 20 and 150 ns are available.

Contextual Info: MOSAI C SEMI CONDUCT OR INC 4QE D S3 ^35337^ GGQOSBT 7 ESINOC 7 ^ - / 3 - 2 <? PUMA 2U4002 PUM A 2U4002-10/12/15 Issue 1.0 : October 1990 ADVANCE PRODUCT INFORMATION Mosaic Semiconductor Inc. 4,194,304 bit CMOS High Speed Static RAM Pin Definition Features

Contextual Info: PUMA 3FI6006-90/12/15 mosaic semiconductor, inc. 512K X 32 FLASH MODULE Issue 4.0 August 1995 Description The PUMA. 3F16006 is a 16 Megabit CMOS 5.0V only FLASH Module in a 6 6 pin PGA package, lAfoich is configurable as 8 , 16, 32 bit wide using CE1-4. Access times of 90, 120 and 150 ns are

Contextual Info: MOSAIC SEMICONDUCTOR INC IMOC basaB?^ oooibib s'ìa S3E J> T-46-13-29 molate PUMA 2U4002-45/55/70/90 Issue 1.0 : February 1990 ADVANCE PRODUCT INFORMATION Mosaic Semiconductor Inc 4,194,304 bit CMOS High Speed UVEPROM Pin Definition Features 1 o o o o o o

d2539

Abstract: D1959 A3S33 al puma
Contextual Info: MOSAIC S E M I C O N D U C T O R INC 40E D EB a3S33?T 0 0 0 0 S 7 7 4 ^jNOC 7 ^ V 6 -/? - 2 ? PUMA 2U400Q PUMA 2U4000-90/12/15 Issue 1.0 : November 1990 Mosaic Samtconduclor Inc. ADVANCE PRODUCT INFORMATION /" ~ ' Pin Definition 4,194,304 bit CMOS High Speed UV EPROM

Contextual Info: MOSAI C S E M I C O N D U C T O R INC 53E ]> • b 3 S 3 3 7 T 0 G D 1 2 4 5 7b£ B I M O C 256 K x 8 SRAM moXaic MS8256RKX A-55/70 Issue 1.0 : June 1992 Mosaic ADVANCE PRODUCT INFORMATION Semiconductor Inc. 262,144 x 8 CMOS High Speed Static RAM Pin Definition

Contextual Info: 4Meg x 1 Monolithic DRAM molate M DM 14000-80/10/12 Issue 3.2 : September 1993 S e m ic o n d u c to r 4,194,304 x 1 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns Available in 20 Pin DIP,20 & 24 Pin VIL 5 Volt Supply ±10% 1024 Refresh Cycles 16 ms

Contextual Info: MOSAIC S E M I C O N D U C T O R INC LIE ]> h 35337•= D D G n ? 2 QbT * M O C 128K X 8 SRAM Module moXaic PUMA 67S4000-85/10/12 Issue 1.0 : January 1993 ADVANCE PRODUCT INFORMATION Mosaic Semicondu x- \

Contextual Info: / 2^ < ^ mosaic P U M A 2U4000 PUMA2U4000-12/15 semiconductor, inc. Issue4.1 : June 1995 Description 4,194,304 bit CMOS UV EPROM The PUMA2U4000 is a 4 M bit CMOS High Speed UV EPROM in a 66 pin PGA package with access ti mes of 120ns and 150ns. The output width is userconfigerable a s 8 ,16 or 32