SC893 Search Results

AON6704L

Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower

PART MARKING

Abstract: 72866 SC-89 sC89-6 SC-89-6 SC89-3 VISHAY SOT LOT CODE SOT 89 marking CODE Package Marking Information SOT-666
Contextual Info: Part Marking Information Vishay Siliconix DEVICE: SC-75A and SC-89 Devices SC-89-6 SC-75A and SC-89-3 D AWL Pin 1 AWL Pin 1 D = Pin 1 Indicator1 A = Part Number Code2, 3 W = Week Code3 L = Lot Code NOTES: 1. For dual symmetrical SC-89, additional dot will be marked at top right corner pin 4 .

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

FGPF4633

Abstract: FGH40N60SFD fgpf50n33 FGA25N120 FGH60N60 fga70n33 fgd4536 FGH60N60SFD FGH40N60 fgh80n60
Contextual Info: FAIRCHILD IGBTs, JFETs and Power MOSFETs Products may be RoHS compliant. Check mouser.com for RoHS status. *Kinked Leads ♦ Surface Mount Device MOUSER STOCK NO. Mfr. For quantities greater than listed, call for quote. Package Mfr. Part No. BVCES IC Min V (A)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

SOT-563 SOT-666

Abstract: marking 802 soic8 sot-563 MOSFET D1 20l sot-23 siliconix MARKING CODE mSOp-8 siliconix code marking to-220 marking code 20L sot-23 sot23 V30114-T1
Contextual Info: Si1024X Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 FEATURES D D D D D D D BENEFITS Very Small Footprint High-Side Switching Low On-Resistance: 0.7 W

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

HP4192A

Abstract: PA2011 PA2011-LF-T7 SC-89
Contextual Info: PA2011 Low-Voltage, Low RON, Single SPDT Analog Switch. DESCRIPTION FEATURES The PA2011 is a low on-resistance, single-pole double- throw monolithic CMOS analog switch. It is designed for low voltage applications with guaranteed operation at 2 V. The PA2011 is ideal for portable and battery powered

FDY102PZ

Abstract: P-CHANNEL SC89 SC89 SC-89-3
Contextual Info: Single P-Channel –1.5 V Specified PowerTrench MOSFET –20 V, –0.83 A, 0.5 : Features tm General Description „ Max rDS(on) = 0.5 : at VGS = –4.5 V, ID = –0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to

74594

Abstract: SC89-3L
Contextual Info: New Product Si1046X Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.420 at VGS = 4.5 V 0.606 0.501 at VGS = 2.5 V 0.505 0.660 at VGS = 1.8 V 0.15 VDS (V) 20 Qg (Typ) • TrenchFET Power MOSFET: 1.8 V Rated • ESD Protected: 2000 V

AO4946

Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22

SOT 663 footprint

Abstract: SC89-3L
Contextual Info: ESDALC6V1Px ASD Application Specific Devices Low capacitance TRANSIL arrays for ESD protection Main applications Where transient overvoltage protection in ESD sensitive equipment is required, such as : • Computers ■ Printers ■ Communication systems

Contextual Info: AO5401E P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5401E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM

TPS71733DCK

Abstract: OMAP-L138 TMS320C6742 TMS320C6746 TMS320C6748 TMS320C6748 dsp schematic
Contextual Info: Application Report SLVA343 – June 2009 Medium Integrated Power Solution Using a Dual DC/DC Converter and an LDO Ambreesh Tripathi . PMP - DC/DC Low-Power Converters ABSTRACT This reference design is intended for users designing with the TMS320C6742,

FDY102

Contextual Info: Single P-Channel –1.5 V Specified PowerTrench MOSFET –20 V, –0.83 A, 0.5 Ω Features General Description „ Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to

Contextual Info: Single P-Channel –1.5 V Specified PowerTrench MOSFET –20 V, –0.83 A, 0.5 : Features tm General Description „ Max rDS(on) = 0.5 : at VGS = –4.5 V, ID = –0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to

Contextual Info: New Product Si1046X Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.420 at VGS = 4.5 V 0.606 0.501 at VGS = 2.5 V 0.505 0.660 at VGS = 1.8 V 0.15 Qg (Typ.) 0.92 • Halogen-free According to IEC 61249-2-21

ESDALC6V1P3

Abstract: JESD97 SC89-3L SOT 663 footprint
Contextual Info: ESDALC6V1Px ASD Application Specific Devices Low capacitance TRANSIL arrays for ESD protection Main applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: • Computers ■ Printers ■ Communication systems

Contextual Info: FDY102PZ Single P-Channel –1.5 V Specified PowerTrench MOSFET –20 V, –0.83 A, 0.5 Ω Features General Description „ Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to

74594

Abstract: SC89-3L SC-89-3
Contextual Info: New Product Si1046X Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.420 at VGS = 4.5 V 0.606 0.501 at VGS = 2.5 V 0.505 0.660 at VGS = 1.8 V 0.15 Qg (Typ.) 0.92 • Halogen-free According to IEC 61249-2-21

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

Contextual Info: Specification Comparison www.vishay.com Vishay Siliconix Si1013CX vs. Si1013X Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SC89-3 Identical Part Number Replacements: Si1013CX-T1-GE3 replaces Si1013X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

2n4416 and application note

Abstract: TSSOP-8 footprint and soldering sot-23 2N4416 equivalent Siliconix sot23 marking THERMAL SWITCH SC-75A sot-23 Marking N2 699 marking code sot23-5 marking code v6 SOT23 V30114 marking code 20L sot-23 sot23
Contextual Info: 2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N4416 −v6 −30 4.5 5 2N4416A −2.5 to −6 −35 4.5 5 SST4416 −v6 −30 4.5 5 FEATURES BENEFITS D Excellent High-Frequency Gain:

SOT 663 footprint

Abstract: sot-665 JESD97 SC89-3L
Contextual Info: ESDALC6V1Px Low capacitance Transil arrays for ESD protection Features • 2 to 4 unidirectional Transil functions ■ Breakdown voltage VBR = 6.1 V min. ■ Low leakage current < 100 nA ■ Low capacitance 7.5 pF @ 3 V ■ Very small PCB area < 2.6 mm2