FDY102PZ Search Results

Contextual Info: FDY102PZ Single P-Channel –1.5 V Specified PowerTrench MOSFET –20 V, –0.83 A, 0.5 Ω Features General Description „ Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to

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Contextual Info: PORTABLE SOLUTIONS w w w. f a i r c h i l d s e m i . c o m INTRODUCTION Fairchild Semiconductor provides complete portable design solutions to assist in your design challenges and accelerate time to market in the ever fast moving design cycle. We offer a large portfolio of leading-edge products

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FDY102PZ

Abstract: P-CHANNEL SC89 SC89 SC-89-3
Contextual Info: Single P-Channel –1.5 V Specified PowerTrench MOSFET –20 V, –0.83 A, 0.5 : Features tm General Description „ Max rDS(on) = 0.5 : at VGS = –4.5 V, ID = –0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to

FDY102

Contextual Info: Single P-Channel –1.5 V Specified PowerTrench MOSFET –20 V, –0.83 A, 0.5 Ω Features General Description „ Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to

Contextual Info: Single P-Channel –1.5 V Specified PowerTrench MOSFET –20 V, –0.83 A, 0.5 : Features tm General Description „ Max rDS(on) = 0.5 : at VGS = –4.5 V, ID = –0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

fdy102pz

Abstract: P-CHANNEL SC89 SC89 FDY102P FDY102 SC893
Contextual Info: Single P-Channel –1.5 V Specified PowerTrench MOSFET –20 V, –0.83 A, 0.5 Ω Features tm General Description „ Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to