SOT666 Search Results

TRANSISTOR SMD MARKING zg

Abstract: 2N7002BKV transistor smd zG TRANSISTOR SMD MARKING CODE zg
Contextual Info: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

15KV

Contextual Info: LITE-ON SEMICONDUCTOR L02ESD5V0F6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT563 The ESD5V0F6-5 is a low capacitance 5-fold ESD array in the ultra small SOT666 plastic package designed to protect up to

Contextual Info: LITE-ON SEMICONDUCTOR L02ESD5V0F6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT563 The L02ESD5V0F6-5 is a low capacitance 5-fold ESD array in the ultra small SOT666 plastic package designed to protect up to

Contextual Info: SO T6 66 SOT666 Tape reel SMD; standard product orientation 12NC ending 315 Rev. 1 — 26 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel QA Seal

g1 TRANSISTOR SMD MARKING CODE

Abstract: smd transistor marking zf SMD TRANSISTOR fet transistor smd zf MOSFET TRANSISTOR SMD MARKING CODE 11 2N7002PV
Contextual Info: 2N7002PV 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 5 August 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

PMP4201G

Abstract: PMP4201V PMP4201Y PMP4501G PMP4501V PMP4501Y PMP5501G PMP5501V
Contextual Info: PMP4501V; PMP4501G; PMP4501Y NPN/NPN matched double transistors Rev. 03 — 19 September 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated

PMP4201G

Abstract: PMP4201V PMP4201Y PMP4501G PMP4501V PMP4501Y PMP5201G PMP5201V SOT353-1 footprint
Contextual Info: PMP4201V; PMP4201G; PMP4201Y NPN/NPN matched double transistors Rev. 03 — 15 September 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors in the SOT666 and SOT363 (SC-88) packages are fully isolated

Contextual Info: STLQ015 150 mA, ultra low quiescent current linear voltage regulator Datasheet - production data • Compatible with ceramic capacitor COUT = 1 µF • Internal current and thermal limit • Package: SOT666-6L • Temperature range: from -40 °C to 125 °C

BCP55

Abstract: BCX55 PBSS4160V PBSS5160V
Contextual Info: PBSS4160V 60 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 31 January 2005 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features • ■ ■

BCP52

Abstract: BCX52 PBSS4160V PBSS5160V 14508
Contextual Info: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V.

PEMD4

Abstract: BC847B PEMD13 pemd9 PEMD6 PEMB4 PEMD12 PEMH11 PBSS3515VS BZA820A
Contextual Info: New DIMENSIONS AND RECOMMENDED SOLDER LANDS FOR REFLOW SOLDERING SOT66x packages: dimensions in mm • SOT666: 6 leads • SOT665: 5 leads • SOT663: 3 leads SOT663 Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

Contextual Info: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been

Contextual Info: PBSS4220V 20 V, 2 A NPN low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.

Contextual Info: LITE-ON SEMICONDUCTOR L02ESD5V0F6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT563 The ESD5V0F6-5 is a low capacitance 5-fold ESD array in the ultra small SOT666 plastic package designed to protect up to

transistor smd marking CODE n6

Abstract: PBSS4220V PBSS5220V MARKING CODE SMD IC
Contextual Info: PBSS4220V 20 V, 2 A NPN low VCEsat BISS transistor Rev. 01 — 6 February 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.

marking code LA SMD

Abstract: MSD779 PMEG3015EV
Contextual Info: PMEG3015EV 30 V, 1.5 A ultra low VF MEGA Schottky barrier rectifier in SOT666 package Rev. 01 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an

BAS70VV

Contextual Info: BAS70VV 70 V, 70 mA Schottky barrier triple isolated diode in SOT666 Rev. 01 — 10 September 2004 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small

BCP52

Abstract: BCX52 PBSS4160V PBSS5160V
Contextual Info: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 01 — 20 April 2004 Objective data sheet 1. Product profile 1.1 General description PNP low VCEsat (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V. 1.2 Features • ■ ■

Contextual Info: PBSS5160V 60 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V.

Contextual Info: PBSS4160V 60 V, 1 A NPN low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features ̈ ̈ ̈ ̈

BAT54CV

Contextual Info: BAT54CV Two Schottky barrier double diodes Rev. 3 — 15 November 2010 Product data sheet 1. Product profile 1.1 General description Two planar Schottky barrier double diodes with common cathodes and an integrated guard ring for stress protection encapsulated in a SOT666 ultra small and flat lead

PMEG3002TV

Contextual Info: PMEG3002TV 0.2 A very low VF MEGA Schottky barrier dual rectifier in SOT666 package Rev. 01 — 21 October 2005 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier dual rectifier

Contextual Info: PBSS5220V 20 V, 2 A PNP low VCEsat BISS transistor Rev. 03 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.

Contextual Info: Package outline Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7