M3D744 Search Results

PBSS2515VS

Abstract: PBSS3515VS
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS3515VS 15 V low VCE sat PNP double transistor Product specification Supersedes data of 2001 Nov 07 2004 Dec 23 Philips Semiconductors Product specification 15 V low VCE(sat) PNP double transistor FEATURES PBSS3515VS

PBSS2515VPN

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VPN 15 V low VCE sat NPN/PNP transistor Product specification Supersedes data of 2001 Nov 07 2005 Jan 11 Philips Semiconductors Product specification 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN QUICK REFERENCE DATA

NXP SMD diode MARKING CODE

Abstract: 01082 BAT74V
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT74V Schottky barrier double diode Product data sheet 2002 Sep 02 NXP Semiconductors Product data sheet Schottky barrier double diode BAT74V FEATURES PINNING • Low forward voltage PIN DESCRIPTION • Low capacitance

PBSS2515VS

Abstract: PBSS3515VS
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS3515VS 15 V low VCE sat PNP double transistor Product data sheet Supersedes data of 2001 Nov 07 2004 Dec 23 NXP Semiconductors Product data sheet 15 V low VCE(sat) PNP double transistor FEATURES PBSS3515VS QUICK REFERENCE DATA

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D744 PEMX1 NPN general purpose double transistor Product data sheet Supersedes data of 2001 Aug 30 2001 Nov 07 NXP Semiconductors Product data sheet NPN general purpose double transistor FEATURES PEMX1 PINNING • 300 mW total power dissipation

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D744 PEMT1 PNP general purpose double transistor Product data sheet Supersedes data of 2001 Sep 25 2001 Nov 07 NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES PEMT1 PINNING • 300 mW total power dissipation

PEMB2

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB2 PNP resistor-equipped double transistor R1 = 47 kΩ, R2 = 47 kΩ Product specification 2001 Sep 14 Philips Semiconductors Product specification PNP resistor-equipped double transistor R1 = 47 kΩ, R2 = 47 kΩ

transistor npn double

Abstract: PEMH4
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH4 NPN resistor-equipped double transistor R1 = 10 kΩ, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification NPN resistor-equipped double transistor R1 = 10 kΩ, R2 = open

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D744 PBSS3515VS 15 V low VCE sat PNP double transistor Product data sheet Supersedes data of 2001 Nov 07 2004 Dec 23 NXP Semiconductors Product data sheet 15 V low VCE(sat) PNP double transistor PBSS3515VS QUICK REFERENCE DATA

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product data sheet 2003 Jan 30 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240V QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation voltage VCEsat

a103 m Transistor

Abstract: PEMF21
Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D744 PEMF21 12 V PNP loadswitch Product data sheet 2004 Jan 12 NXP Semiconductors Product data sheet 12 V PNP loadswitch PEMF21 FEATURES QUICK REFERENCE DATA • Low VCEsat transistor and resistor-equipped transistor in one package

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D744 PMEG2015EV Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2003 May 21 2003 Jun 03 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode FEATURES PMEG2015EV PINNING • Forward current: 1.5 A

BAT960

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Product data sheet Supersedes data of 2002 Jun 24 2003 May 01 NXP Semiconductors Product data sheet Schottky barrier diode BAT960 PINNING FEATURES • High current capability PIN DESCRIPTION

Marking Code Z7

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMZ7 NPN/PNP general purpose transistors Preliminary specification 2001 Sep 25 Philips Semiconductors Preliminary specification NPN/PNP general purpose transistors PEMZ7 PINNING FEATURES • 300 mW total power dissipation

marking code N9

Abstract: PBSS2515VS
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCEsat NPN double transistor Preliminary specification 2001 Sep 13 Philips Semiconductors Preliminary specification 15 V low VCEsat NPN double transistor FEATURES PBSS2515VS QUICK REFERENCE DATA

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMD12 NPN/PNP resistor-equipped transistors Preliminary specification 2001 Aug 30 Philips Semiconductors Preliminary specification NPN/PNP resistor-equipped transistors FEATURES PEMD12 QUICK REFERENCE DATA • 300 mW total power dissipation

marking code D3

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMD3 NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Preliminary specification 2001 Sep 13 Philips Semiconductors Preliminary specification NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D744 BC857BV PNP general purpose double transistor Product data sheet Supersedes data of 2001 Aug 10 2001 Nov 07 NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES BC857BV PINNING • 300 mW total power dissipation

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D744 BAT74V Schottky barrier double diode Product data sheet 2002 Sep 02 NXP Semiconductors Product data sheet Schottky barrier double diode BAT74V FEATURES PINNING • Low forward voltage PIN DESCRIPTION • Low capacitance 1

PESDXL5UV

Abstract: SOT666 package philips diode arrays
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PESD3V3L5UV; PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays in SOT666 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package

MARKING CODE f5

Abstract: PMEG2015EV
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2015EV Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2003 May 21 2003 Jun 03 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode FEATURES PMEG2015EV PINNING • Forward current: 1.5 A

PBSS4240V

Abstract: PBSS5240V
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product data sheet 2003 Jan 30 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMZ7 NPN/PNP general purpose transistors Product data sheet Supersedes data of 2001 Sep 25 2001 Nov 07 NXP Semiconductors Product data sheet NPN/PNP general purpose transistors FEATURES PEMZ7 PINNING • 300 mW total power dissipation

PMEG2010EV

Abstract: MARKING CODE F1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2010EV Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2002 Jun 24 2003 Aug 20 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode FEATURES PMEG2010EV PINNING • Forward current: 1 A