AO8810 Search Results
AO8810 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AO8810 | Alpha & Omega Semiconductor | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 114.24KB | 4 | ||
| AO8810 | Alpha & Omega Semiconductor | Battery Protection - 20V Common-Drain Dual N-Channel MOSFET | Original | 217.95KB | 5 | ||
| AO8810L | Alpha & Omega Semiconductor | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 114.24KB | 4 |
AO8810 Price and Stock
Alpha & Omega Semiconductor AO8810Transistor: N-MOSFET x2; unipolar; 20V; 5.7A; 1W; TSSOP8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AO8810 | 3,000 |
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AO8810 | 160 |
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AO8810 | 574 |
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AO8810 | 51,000 |
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AO8810 Datasheets Context Search
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Contextual Info: AO8810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8810 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM |
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ao8810ao8810l | |
AO8810
Abstract: AO8810L
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ao8810ao8810l | |
AO8810
Abstract: AO8810L
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ao8810ao8810/lao8810l-ao8810l | |
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Contextual Info: Rev 2: Nov 2004 AO8810, AO8810L Green Product Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate |
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Contextual Info: AO8810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8810 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a |
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ao8810ao8810l | |
AO8810Contextual Info: AO8810 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary The AO8810 uses advanced trench technology to provide excellent RDS ON , low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain |
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Contextual Info: AO8810A Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8810A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a |
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ao8810aao8810 | |
AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
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o-252o-263msop-10sc70-3+16 | |
9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
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2n70002n7000a2n7000k70max+13 | |
STM9435
Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
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stu3055l2apm2034nustu4030nlapm2512nu+15 | |
AO4946
Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
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ao4946aoz1242ao4407aaoz1242ai+6 | |
semiconductor cross reference
Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
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stu3055l2apm2034nustu4030nlapm2512nu+15 | |
220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
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ad9272p462-ndlng295lfcp2up463-nd+11 | |
AO4946
Abstract: AO4456 AO6414 AO4466 ao4712 AOP610 D-PAK AO4803A AO3407A AO4427 AO8820
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sc-89o-220ot-23custome6403+16 |