AO4466 Search Results
AO4466 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AO4466 | Alpha & Omega Semiconductor | SMPS High Side - 30V N-Channel MOSFET | Original | 328.59KB | 6 | ||
| AO4466 | Alpha & Omega Semiconductor | N-Channel Enhancement Mode Field Effect Transistor | Original | 127KB | 4 | ||
| AO4466_102 | Alpha & Omega Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 10A 8-SOIC | Original | 326.77KB |
AO4466 Price and Stock
Alpha & Omega Semiconductor AO4466Transistor: N-MOSFET; unipolar; 30V; 7A; 2W; SO8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AO4466 | 1,350 | 3 |
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AO4466 | 20 |
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alpha & omega AO4466Power Field-Effect Transistor, 10A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AO4466 | 12,885 |
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Alpha & Omega Semiconductor AO4466LTrans MOSFET N-CH 30V 9.4A 8-Pin SOIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AO4466L | 12,000 |
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Buy Now | |||||||
AO4466 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AO4466 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4466 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow |
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Contextual Info: AO4466 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4466 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow |
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AO4466L
Abstract: AO4466
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ao4466ao4466/lao4466l-ao4466l | |
AO4466LContextual Info: AO4466 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4466/L uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow |
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Contextual Info: AO4466 30V N-Channel MOSFET General Description Product Summary The AO4466 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow |
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AO4466L
Abstract: AO4466
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AO4466Contextual Info: AO4466 30V N-Channel MOSFET General Description Product Summary The AO4466 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow |
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Contextual Info: AO4466 30V N-Channel MOSFET General Description Product Summary The AO4466 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow |
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ao4466 | |
AO4466Contextual Info: AO4466 30V N-Channel MOSFET General Description Product Summary The AO4466 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow |
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Contextual Info: AO4466 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4466/L uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow |
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ao4466ao4466/lao4466l-ao4466l | |
AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
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o-252o-263msop-10sc70-3+16 | |
kb926
Abstract: kb925 FBMA-L11-201209-221LMA30T compal Compal Electronics foxconn Compal Merom RT8203 mobile 478 SOCKET PIN VSS256
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kb926kb925fbma-l11-201209-221lma30tcompal+6 | |
SLG8SP553V
Abstract: KB926 LA4101P SP8K10 LM 4863 D FBMA-L11-201209-221LMA30T 4101p ich9 JMB385 compal notebook schematics
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4101pslg8sp553vkb926la4101p+6 | |
LA-4611P
Abstract: KB926QFA1 south bridge SIS 968 la4611 sis m672 307ELV SiS307ELV ICS9LPR600 JP36B kb926qf
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ksw01/91sism672/fxsis968sis307elv+13 | |
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LA-4082P
Abstract: G6179 XDR 1 NVIDIA schematics kb926 tps51125 Compal Electronics la-6121P Montevina compal notebook schematics FBMA-L11-201209-221LMA30T TPS2231
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la-4082pa4082g6179xdr 1+7 | |
JBK00 LA4092P
Abstract: LA-4092P JBK00 KB926 tps51125 JBK00 LA4092P 1.0 FBMA-L11-201209-221LMA30T kb926qf RT8204 LA-4111P
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jbk00la-4092prx781sb700+9 | |
O2Micro ozh24tn
Abstract: LA-4841P KB926 ICS9LPRS397 SN0806081 OZH24 SN0806081RHBR 2C156 ich9 isl6268caz-t
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la-4841pkfw11o2micro ozh24tnkb926+7 | |
ALC271X
Abstract: alc271x audio rt8205e RT8205EGQW KB930 kb930qf KB930QF A1 ENE KB930QF A1 LA-6901P RTM890N-631-VB-GRT
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la-6901palc271xalc271x audiort8205e+6 | |
NS692405
Abstract: KB926 tps51125 KB926 sequence LA-4102p FBMA-L11-201209-221LMA30T kb926qf SLG8SP553 compal HP Keyboard KB 0316
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la-4102pns692405kb926tps51125+6 | |
LA-4111p
Abstract: ENE KB 926 fcbga528 KB926 88e8042 Compal Electronics tps51125 compal PC319 9H03200413
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rs780msb700la-4111pene kb 926+8 | |
kb926qf-d3
Abstract: APL5607 kb926qfd3 MAX8774GTL LA-4861P kb926 c945 g528 Realtek ALC272 la4861p ar8132-al1e
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rs690mcsb600a4861kb926qf-d3+9 | |
G545A1
Abstract: KB926 SLG8SP556V DTA144EUA_SC70-3 AS0A626 OZ129TN FBMA-L11-201209-221LMA30T SILEGO q27b AS0A626-U2 si7686
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la-4141p10kohmpin23ao4468+10 | |
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Contextual Info: シングル N チャンネル MOSFET ELM14466AA-N •概要 ■特長 ELM14466AA-N は低入力容量 低電圧駆動、 低 ・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=9.4A Vgs=10V ・ Rds(on) < 23mΩ (Vgs=10V) |
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elm14466aa-n | |
CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
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5ce120c5ke120ca5ce120ca5ce12a+14 | |