AO4447A Search Results
AO4447A Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AO4447A | Alpha & Omega Semiconductor | Load Switch - 30V P-Channel MOSFET | Original | 305.94KB | 5 | ||
| AO4447A_102 | Alpha & Omega Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET | Original | 375.99KB |
AO4447A Price and Stock
Alpha & Omega Semiconductor AO4447ATransistor: P-MOSFET; unipolar; -30V; -13A; 2W; SO8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AO4447A | 1,584 | 1 |
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AO4447A | 3,000 | 3,000 |
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| AO4447A | 58 | 33 |
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AO4447A | 3,000 | 16 Weeks | 3,000 |
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| AO4447A | Cut Strips | 58 | 16 Weeks | 1 |
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AO4447A | 6,909 | 1 |
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AO4447A | 4,552 |
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| AO4447A | 4,552 |
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| AO4447A | 975 |
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AO4447A | 24,133 |
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AO4447A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AO4447ALContextual Info: AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447AL uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. |
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ao4447al | |
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Contextual Info: AO4447A 30V P-Channel MOSFET General Description Product Summary • The AO4447A uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. VDS ID (at VGS = -10V) |
Original |
ao4447a | |
AO4447AContextual Info: AO4447A 30V P-Channel MOSFET General Description Product Summary The AO4447A uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. VDS (V) = -30V ID = -17A |
Original |
ao4447a | |
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Contextual Info: AO4447A 30V P-Channel MOSFET General Description Product Summary • The AO4447A uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. VDS ID (at VGS = -10V) |
Original |
ao4447a | |
AO4447ALContextual Info: AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4447AL uses advanced trench technology to provide excellent RDS ON with low gate charge.This device is ideal for load switch and battery protection applications. |
Original |
ao4447al | |
AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
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Original |
o-252o-263msop-10sc70-3+16 |