AON3814 Search Results
AON3814 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AON3814 | Alpha & Omega Semiconductor | Battery Protection - 20V N-Channel MOSFET | Original | 374.94KB | 5 | ||
| AON3814 | Alpha & Omega Semiconductor | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 122.15KB | 4 |
AON3814 Price and Stock
Alpha & Omega Semiconductor AON3814MOSFET 2N-CH 20V 8DFN |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
AON3814 | Tape & Reel | 3,000 |
|
Buy Now | ||||||
|
AON3814 | 3,000 |
|
Get Quote | |||||||
Alpha & Omega Semiconductor AON3814LMOSFET 2N-CH 20V 6A 8DFN |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
AON3814L | Tape & Reel |
|
Buy Now | |||||||
AON3814 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: AON3814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. |
Original |
AON3814 AON3814 | |
|
Contextual Info: AON3814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. |
Original |
AON3814 AON3814 | |
AON3814Contextual Info: AON3814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. |
Original |
AON3814 AON3814 | |
|
Contextual Info: AON3814 20V Dual N-Channel MOSFET General Description Product Summary The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable |
Original |
AON3814 AON3814 | |
AON3814L
Abstract: AON3814 AON3814/L
|
Original |
AON3814 AON3814/L AON3814 AON3814L -AON3814L | |
AON3814Contextual Info: AON3814 20V N-Channel MOSFET General Description Product Summary The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable |
Original |
AON3814 AON3814 | |
|
Contextual Info: AON3814 20V N-Channel MOSFET General Description Product Summary The AON3814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable |
Original |
AON3814 AON3814 | |
AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
|
Original |
O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025 | |
AO4946
Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
|
Original |