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Switchcraft Conxall CAS1007984 DC Power Cords High-Amp DC PWR Cbl Assy STRT
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Mouser Electronics	CAS1007984					1 - 10 - 100 $29.52 1000 $27.67 10000 $27.67	Get Quote
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Master Electronics	CAS1007984		5			1 $42.12 10 $37.33 100 $30.04 1000 $30.04 10000 $30.04	Buy Now
Switchcraft Conxall CARAS1007984 DC Power Cords High-Amp DC PWR Cbl Assy R/A
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Mouser Electronics	CARAS1007984					1 - 10 - 100 $31.20 1000 $29.33 10000 $29.33	Get Quote
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RS	CARAS1007984	Bulk		20 Weeks	25	1 - 10 - 100 $42.52 1000 $39.55 10000 $39.55	Get Quote
Sager	CARAS1007984				1	1 $43.28 10 $32.46 100 $27.05 1000 $24.35 10000 $24.35	Buy Now
Switchcraft Conxall CAS1007990 DC Power Cords Hi-Am11A Plg 0.08in Strt Blunt 79 in
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Mouser Electronics	CAS1007990					1 - 10 - 100 $30.08 1000 $29.01 10000 $29.01	Get Quote
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Sager	CAS1007990				1	1 $47.27 10 $35.45 100 $29.54 1000 $26.59 10000 $26.59	Buy Now
Switchcraft Conxall CARAS1007990 DC Power Cords Hi-Am11A Plug 0.08in RA Blunt 79 in
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Mouser Electronics	CARAS1007990					1 - 10 - 100 $30.08 1000 $29.01 10000 $29.01	Get Quote
Newark	CARAS1007990	Bulk			100	1 - 10 - 100 $35.86 1000 $34.65 10000 $34.65	Buy Now
RS	CARAS1007990	Bulk		12 Weeks	100	1 - 10 - 100 $32.72 1000 $32.72 10000 $32.72	Get Quote
Sager	CARAS1007990				1	1 $47.27 10 $35.45 100 $29.54 1000 $26.59 10000 $26.59	Buy Now

S10079 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MOSFET SOT-23 marking code M2 Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si2312bds 2002/95/ec o-236 ot-23 +4si2312bds-t1-e3 si2312bds-t1-ge3 2011/65/eu mosfet sot-23 marking code m2	PDF
Si1499DH Abstract: P-Channel mosfet sot-363 Si1499DH-T1-E3 Contextual Info: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b	Original	si1499dh ot-363 sc-70 2002/95/ec +318-jul-08 p-channel mosfet sot-363 si1499dh-t1-e3	PDF
Si1926DL-T1-GE3 Abstract: SI1926DL-T1-E3 Contextual Info: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	si1926dl 2002/95/ec ot-363 sc-70 +3si1926dl-t1-e3 si1926dl-t1-ge3 18-jul-08	PDF
si1965 Contextual Info: Si1965DH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 12 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) a	Original	si1965dh 2002/95/ec ot-363 sc-70 +4si1965dh-t1-e3 si1965dh-t1-ge3 18-jul-08 si1965	PDF
si1869dh-t1-ge3 Abstract: Si1869DH-T1-E3 si1869 620td SC70-6 SI1869DH Contextual Info: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a	Original	si1869dh sc70-6 6124lectual 18-jul-08 +4si1869dh-t1-ge3 si1869dh-t1-e3 si1869 620td	PDF
Contextual Info: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b	Original	si1499dh ot-363 sc-70 2002/95/ec +22011/65/eu 12-mar-12	PDF
SI1926DL-T1-E3 Contextual Info: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	si1926dl 2002/95/ec ot-363 sc-70 +3si1926dl-t1-e3 si1926dl-t1-geemarks 2011/65/eu	PDF
S10011 Abstract: S10045 S10046 S10035 S10110 S10063 S10071 S10100 S10090 S10115 Contextual Info: S10000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground	Original	s10000 mil-prf83446 mil-std-981 mil-std-202 +10s10011 s10045 s10046 s10035 s10110 s10063 s10071 s10100 s10090 s10115	PDF
Marking 7133-1 Abstract: 7133-1 Si1022R-T1-E3 Si1022R-T1-GE3 71331 si1022rt1ge3 SC-75A Si1022R Contextual Info: Si1022R Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min.) (V) RDS(on) (Ω) VGS(th) (V) ID (mA) 60 1.25 at VGS = 10 V 1 to 2.5 330 SC-75A (SOT-416) G 1 3 S 2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	si1022r sc-75a ot-416 2002/95/ec +718-jul-08 marking 7133-1 7133-1 si1022r-t1-e3 si1022r-t1-ge3 71331 si1022rt1ge3	PDF
Contextual Info: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	si1926dl 2002/95/ec ot-363 sc-70 +4si1926dl-t1-e3 si1926dl-t1-geelectronic 2011/65/eu js709a	PDF
Contextual Info: Si1958DH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a Qg (Typ.) a 0.205 at VGS = 4.5 V 1.3 0.340 at VGS = 2.5 V 1.3a 1.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si1958dh 2002/95/ec ot-363 sc-70 +4si1958dh-t1-e3 si1958dh-t1-ge3 2011/65/eu js709a	PDF
Contextual Info: Si1965DH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 12 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) a	Original	si1965dh 2002/95/ec ot-363 sc-70 +3si1965dh-t1-e3 si1965dh-t1-ge3 18-jul-08	PDF
Contextual Info: Si1958DH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.205 at VGS = 4.5 V 1.3a 0.340 at VGS = 2.5 V 1.3a VDS (V) 20 Qg (Typ.) 1.2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si1958dh 2002/95/ec ot-363 sc-70 +3si1958dh-t1-e3 si1958dh-t1-ge3 18-jul-08	PDF
Contextual Info: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b	Original	si1499dh ot-363 sc-70 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF

Si2312BDS Abstract: Si2312BDS-T1-GE3 Si2312BDS-T1-E3 m2 marking Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si2312bds 2002/95/ec o-236 ot-23 +4si2312bds-t1-e3 si2312bds-t1-ge3 18-jul-08 m2 marking	PDF
Si1905DL Abstract: marking code QB Contextual Info: Si1905DL Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.600 at VGS = - 4.5 V ± 0.60 0.850 at VGS = - 2.5 V ± 0.50 1.200 at VGS = - 1.8 V ± 0.42 • Halogen-free According to IEC 61249-2-21 Definition	Original	si1905dl 2002/95/ec ot-363 sc-70 +4si1905dl-t1-e3 si1905dl-t1-ge3 18-jul-08 marking code qb	PDF
SC70-6 Abstract: Si1867DL Mil-Std-833D si1867 Contextual Info: Si1867DL Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 RDS(on) (Ω) ID (A) 0.600 at VIN = 4.5 V ± 0.6 0.850 at VIN = 2.5 V ± 0.5 1.200 at VIN = 1.8 V ± 0.2 DESCRIPTION The Si1867DL includes a p- and n-channel MOSFET in a	Original	si1867dl sc70-6 61249-2lectual 18-jul-08 +2mil-std-833d si1867	PDF
Contextual Info: Si1869DH Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 20 RDS(on) (Ω) ID (A) 0.165 at VIN = 4.5 V ± 1.2 0.222 at VIN = 2.5 V ± 1.0 0.303 at VIN = 1.8 V ± 0.7 DESCRIPTION The Si1869DH includes a p- and n-channel MOSFET in a	Original	si1869dh sc70-6 18-jul-08	PDF
Contextual Info: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	si1926dl 2002/95/ec ot-363 sc-70 +3si1926dl-t1-e3 si1926dl-t1-ge3 11-mar-11	PDF
Contextual Info: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b	Original	si1499dh 2002/95/ec ot-363 sc-70 +22011/65/eu 12-mar-12	PDF
Contextual Info: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	si1926dl 2002/95/ec ot-363 sc-70 +3si1926dl-t1-e3 si1926dl-t1-ge3 2011/65/eu	PDF
Contextual Info: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b	Original	si1499dh 2002/95/ec ot-363 sc-70 +111-mar-11	PDF
Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si2312bds 2002/95/ec o-236 ot-23 +3si2312bds-t1-e3 si2312bds-t1-ge3 2011/65/eu	PDF
SI1553DL Contextual Info: Si1553DL Vishay Siliconix Complementary 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V ± 0.70 0.630 at VGS = 2.5 V ± 0.54 0.995 at VGS = - 4.5 V ± 0.44 1.800 at VGS = - 2.5 V ± 0.32	Original	si1553dl 2002/95/ec ot-363 sc-70 +3si1553dl-t1-e3 si1553dl-t1-ge3 18-jul-08	PDF

S10079 Search Results

S10079 Price and Stock

Switchcraft Conxall CAS1007984

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Switchcraft Conxall CARAS1007990

S10079 Datasheets Context Search

MOSFET SOT-23 marking code M2

Si1499DH

Si1926DL-T1-GE3

si1965

si1869dh-t1-ge3

SI1926DL-T1-E3

S10011

Marking 7133-1

Si2312BDS

Si1905DL

SC70-6

SI1553DL