SI2312BDS Search Results

MOSFET SOT-23 marking code M2

Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

AN609

Abstract: Si2312BDS
Contextual Info: Si2312BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si2312BDS

Abstract: Si2312BDS-T1-GE3 Si2312BDS-T1-E3 m2 marking
Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI2312BDS

Abstract: 50396
Contextual Info: SPICE Device Model Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI2312BDS-T1-GE3

Abstract: Si2312BDS Si2312BDS-T1-E3
Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si2312BDS-T1-E3

Abstract: MOSFET SOT-23 marking code M2 Si2312BDS
Contextual Info: Si2312BDS New Product Vishay Siliconix N-Channel 20 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.031 @ VGS = 4.5 V 5.0 0.037 @ VGS = 2.5 V 4.6 0.047 @ VGS = 1.8 V 4.1 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 7.5 TO-236

Si2312DS-T1-E3

Abstract: Si2312BDS-T1-E3 SI2312BDS Si2312DS Si2312DS-T1
Contextual Info: Specification Comparison Vishay Siliconix Si2312BDS vs. Si2312DS Description: N-Channel, 20 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2312BDS-T1-E3 Replaces Si2312DS-T1-E3 Si2312BDS-T1-E3 Replaces Si2312DS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

SI2312CDS

Abstract: SI2312bDS SI2312BDS-T1-GE3
Contextual Info: Specification Comparison Vishay Siliconix Si2312CDS vs. Si2312BDS Description: Package: Pin Out: N-Channel, 20 V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2312CDS-T1-GE3 replaces Si2312BDS-T1-GE3 Si2312CDS-T1-GE3 replaces Si2312BDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

MOSFET SOT-23 marking code M2

Abstract: SI2312BDS-T1-GE3 SI2312BDS Si2312BDS-T1-E3
Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested

SI2312BDS-T1-E3

Contextual Info: Si2312BDS New Product Vishay Siliconix N-Channel 20 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.031 @ VGS = 4.5 V 5.0 0.037 @ VGS = 2.5 V 4.6 0.047 @ VGS = 1.8 V 4.1 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 7.5 TO-236

Si2312BDS-T1-GE3

Abstract: Si2312BDS-T1-E3 Si2312BDS S10079 M2 MARKING CODE sot-23 CODE 41
Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI2312BDS

Contextual Info: SPICE Device Model Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si2312BDS-T1-GE3

Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

luxeon driver 1200 ma mosfet

Abstract: luxeon driver 1200 ma High power led driver LED lights manufacturing technology Luxeon III Star LED 1N4448W 2N7002L B240A LT3474 Si2312BDS
Contextual Info: High Voltage Buck Converters Drive High Power LEDs Design Note 392 Keith Szolusha Introduction High power LEDs continue to replace traditional bulbs in new automotive, industrial, backlight display and architectural detail lighting systems. LEDs excel in a wide

RTL8211E

Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

RTL8211E

Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

ISL6259

Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
Contextual Info: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01

PTPR330M9L

Abstract: PT121 LED led HG Luminus PT121 LT3743 Luminus Driver luminus datasheet PT120 Luminus pwm ptpr330
Contextual Info: L DESIGN FEATURES High Current/High Speed LED Driver Revolutionizes PWM Dimming by Josh Caldwell Introduction Power drivers that can produce regulated high current pulses are used in a number of lighting applications, ranging from high current LEDs in DLP projectors to high power laser

schematic diagram inverter 12v to 24v 1000w

Abstract: car power amp circuit diagrams 1000w schematic diagram 48V solar charge controller 48V DC to 12v dc 40 amp converter circuit diagram 1000W Amplifier 1000w schematic diagrams solar charger schematic 24V 12v 1000W car AUDIO AMPLIFIER CIRCUIT DIAGRAM 800w class d circuit diagram schematics amplifier circuit diagram class D 1000w 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM
Contextual Info: LINEAR TECHNOLOGY DECEMBER 2009 IN THIS ISSUE… COVER ARTICLE 1.2A Buck Converters Draw Only 2.8µA When Regulating Zero Load, Accept 38VIN or 55VIN.1 John Gardner Linear in the News.2 DESIGN FEATURES

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

C3743

Abstract: Common Cathode RGB LEDS 5mm LT3474-1 LT3743 LT3743EFE LT3755 top mark 0506 for NXP PT120 MSS1048-103MLB 5mm RGB led 4 pin
Contextual Info: LT3743 High Current Synchronous Step-Down LED Driver with Three-State Control DESCRIPTION FEATURES n n n n n n n n n n PWM Dimming Provides Up to 3000:1 Dimming Ratio CTRL_SEL Dimming Provides Up to 3000:1 Dimming Ratio Between Any Current Three-State Current Control for Color Mixing

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8