SI1867 Search Results

50403

Contextual Info: Si1867DL Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 rDS(on) (W) ID (A) 0.600 @ VIN = 4.5 V "0.6 0.850 @ VIN = 2.5 V "0.5 1.200 @ VIN = 1.8 V "0.2 D D D D D TrenchFETr Power MOSFET 600-mW Low rDS(on) 1.8- to 8-V Input

SC70-6

Abstract: Si1867DL Mil-Std-833D si1867
Contextual Info: Si1867DL Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 RDS(on) (Ω) ID (A) 0.600 at VIN = 4.5 V ± 0.6 0.850 at VIN = 2.5 V ± 0.5 1.200 at VIN = 1.8 V ± 0.2 DESCRIPTION The Si1867DL includes a p- and n-channel MOSFET in a

Mil-Std-833D

Abstract: SC70-6 Si1867DL K1280 DIODE UF marking code
Contextual Info: Si1867DL Vishay Siliconix New Product Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 rDS(on) (Ω) ID (A) 0.600 at VIN = 4.5 V ± 0.6 0.850 at VIN = 2.5 V ± 0.5 1.200 at VIN = 1.8 V ± 0.2 • • • • TrenchFET Power MOSFET 600 mΩ Low rDS(on)

SC70-6

Abstract: Si1867DL
Contextual Info: Si1867DL Vishay Siliconix New Product Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 rDS(on) (Ω) ID (A) 0.600 at VIN = 4.5 V ± 0.6 0.850 at VIN = 2.5 V ± 0.5 1.200 at VIN = 1.8 V ± 0.2 • • • • TrenchFET Power MOSFET 600 mΩ Low rDS(on)

AN609

Abstract: Si1867DL
Contextual Info: Si1867DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si1867DL Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 RDS(on) (Ω) ID (A) 0.600 at VIN = 4.5 V ± 0.6 0.850 at VIN = 2.5 V ± 0.5 1.200 at VIN = 1.8 V ± 0.2 DESCRIPTION The Si1867DL includes a p- and n-channel MOSFET in a

Contextual Info: Si1867DL Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 RDS(on) (Ω) ID (A) 0.600 at VIN = 4.5 V ± 0.6 0.850 at VIN = 2.5 V ± 0.5 1.200 at VIN = 1.8 V ± 0.2 DESCRIPTION The Si1867DL includes a p- and n-channel MOSFET in a

Contextual Info: Si1867DL Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 rDS(on) (W) ID (A) 0.600 @ VIN = 4.5 V "0.6 0.850 @ VIN = 2.5 V "0.5 1.200 @ VIN = 1.8 V "0.2 D D D D D TrenchFETr Power MOSFET 600-mW Low rDS(on) 1.8- to 8-V Input

Contextual Info: Si1867DL Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 RDS(on) (Ω) ID (A) 0.600 at VIN = 4.5 V ± 0.6 0.850 at VIN = 2.5 V ± 0.5 1.200 at VIN = 1.8 V ± 0.2 DESCRIPTION The Si1867DL includes a p- and n-channel MOSFET in a

SC70-6

Abstract: Si1867DL MOSFET 1 KW A60R2
Contextual Info: Si1867DL Vishay Siliconix New Product Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 rDS(on) (W) ID (A) 0.600 @ VIN = 4.5 V "0.6 0.850 @ VIN = 2.5 V "0.5 1.200 @ VIN = 1.8 V "0.4 D D D D D D TrenchFETr Power MOSFET Lead Free 600-mW Low rDS(on)

Contextual Info: Si1867DL Vishay Siliconix New Product Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 rDS(on) (Ω) ID (A) 0.600 at VIN = 4.5 V ± 0.6 0.850 at VIN = 2.5 V ± 0.5 1.200 at VIN = 1.8 V ± 0.2 • • • • TrenchFET Power MOSFET 600 mΩ Low rDS(on)

GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no