SI1926DL Search Results
SI1926DL Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI1926DL-T1-BE3 | Vishay Siliconix | MOSFET 2N-CH 60V 0.37A SOT363 | Original | 254.54KB | |||
| SI1926DL-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 370MA SC-70-6 | Original | 11 | |||
| SI1926DL-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 370MA SOT363 | Original | 11 |
SI1926DL Price and Stock
Vishay Intertechnologies SI1926DL-T1-GE3MOSFET 2N-CH 60V 0.37A SC70-6 |
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SI1926DL-T1-GE3 | Cut Tape | 663 | 1 |
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SI1926DL-T1-GE3 | Reel | 3,000 |
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SI1926DL-T1-GE3 | 1,021 | 51 |
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SI1926DL-T1-GE3 | Cut Strips | 1,021 | 99 Weeks | 1 |
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SI1926DL-T1-GE3 | Reel | 3,000 |
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Vishay Intertechnologies SI1926DL-T1-E3MOSFET 2N-CH 60V 0.37A SC70-6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI1926DL-T1-E3 | Reel |
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SI1926DL-T1-E3 | Ammo Pack | 1 |
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SI1926DL-T1-E3 | Cut Tape | 4 | 1 |
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SI1926DL-T1-E3 | 1,974 |
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SI1926DL-T1-E3 | Reel | 3,000 | 3,000 |
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Vishay Intertechnologies SI1926DL-T1-BE3MOSFET 2N-CH 60V 0.34A SC70-6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI1926DL-T1-BE3 | Digi-Reel | 1 |
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SI1926DL-T1-BE3 | Reel | 3,000 |
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SI1926DL-T1-BE3 | Cut Tape | 1,357 | 1 |
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SI1926DL-T1-BE3 | 60,000 | 11 |
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SI1926DL-T1-BE3 | 48,000 |
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Vishay Siliconix SI1926DL-T1-GE3SI1926DL-T1-GE3 DUAL N-CHANNEL MOSFET TRANSISTOR, 0.37 A, 60 V, 6-PIN SOT-363 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI1926DL-T1-GE3 | Bulk | 20 |
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Vishay Intertechnologies SI1926DLT1E3Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI1926DLT1E3 | 4,575 |
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SI1926DL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si1926DL www.vishay.com Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) MAX. ID (A) 1.4 at VGS = 10 V 0.37 3 at VGS = 4.5 V 0.25 Qg (nC) TYP. 0.47 D1 6 • 100 % Rg tested • ESD protected: 1800 V • Material categorization: |
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Si1926DL OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Si1926DL-T1-GE3
Abstract: SI1926DL-T1-E3
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Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 18-Jul-08 | |
Si1926DL_RC
Abstract: SI1926DL c 3807 3150 mosfet MOSFET 1052 AN609
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Si1926DL AN609, 10-Jun-08 Si1926DL_RC c 3807 3150 mosfet MOSFET 1052 AN609 | |
SI1926DL-T1-E3Contextual Info: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GEemarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
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Contextual Info: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GEelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: New Product Si1926DL Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg Tested • ESD Protected: 1800 V |
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Si1926DL OT-363 SC-70 Si1926DL-T1-E3 08-Apr-05 | |
S-81614Contextual Info: SPICE Device Model Si1926DL Vishay Siliconix Dual N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si1926DL 18-Jul-08 S-81614 | |
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Contextual Info: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 11-Mar-11 | |
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Contextual Info: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
72193
Abstract: si1926dl-t1-e3 Si1926 marking s1 sot363
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Si1926DL OT-363 SC-70 Si1926DL-T1-E3 18-Jul-08 72193 Si1926 marking s1 sot363 | |
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Contextual Info: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 11-Mar-11 | |
BSS138 NXP
Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
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OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 |