RFP10 Search Results

F10N12L

Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
Contextual Info: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)

RCA 467

Abstract: TA9405 RFM10P12 transistor RCA 467 RFP10P12 TA9404 TA940 92CS-38272 RFM10P15 RFP10P15
Contextual Info: Standard Power M O S F E Ts_ RFM10P12, RFM10P15, RFP10P12, RFP10P15 File Number 1595 P-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, -120V and -150 V rDS on = 0.5 n TE R M IN A L DIA G R A M Features: • ■ ■ •

M339

Abstract: RFP10N15 transistor m339 ta9192 RFP10N12 RFM10N12 RFM10N15
Contextual Info: □1 DE I 3fl7SDfll DDlflim S | ~ 3875081 G E SOLID STATE 0 1E 18141 D T -3 9 ’] / Standard Power MOSFETs_ RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber 1445 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi

F10P03L

Abstract: 10P03L p-channel mosfet BL Harris Semiconductor Integrated Circuits N10T TC227 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
Contextual Info: RFD10P03L, RFD10P03LSM, RFP10P03L HARRIS S E M I C O N D U C T O R 10A, 30V, 0.200&, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufac­ tured using the MegaFET process. This process, which uses

f10p03l

Abstract: 10P03L 10p03 Logic Level p-Channel Power MOSFET TA49205 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L n097
Contextual Info: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet January 2002 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET Features These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

RFP10P03L

Contextual Info: RFD10P03L, RFD10P03LSM RFP10P03L ill HARRIS U U S E M I C O N D U C T O R March 1994 10A, -30V, Avalanche Rated, Logic Level P-Channel Enhancem ent-M ode Power M OSFETs MegaFETs Package Features TO-220AB • 10A.-30V TOP VIEW • r DS(ON) ~ 0.200U 1— • UIS Rating Curve (Single Pulse)

f10p03l

Abstract: TC227 25e-2 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
Contextual Info: RFD10P03L, RFD10P03LSM, RFP10P03L Data Sheet July 1999 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET Title FD1 03L, D10 3LS eyrds ter- 3515.2 Features • 10A, 30V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,

F10N15L

Abstract: F10N12L RCA SOLID STATE F10N12L F10N12 RFM10N15L F10N15 RFP10N15L RFM10N12L RFP10N12L TA9530
Contextual Info: 387 5081 G E SOLID STATE 01 DE | 3A75Dfil Q01fll4M4 1 1 T'37 Logic-Level Power MOSFETs _ :_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L F ile N u m b e r 1559 Power Logic Level MOSFETs N-Channel Logic Level

RFM10P12

Abstract: RFM10P15 RFP10P12 RFP10P15 rca MIL ID TA9404 rca solid state Linear I8233
Contextual Info: "Öl G E SOLID STATE DE . 3 8 7 5 0 8 1 G E SO LID STATE Standard Power MOSFETs_ I 3Û750S1 01E Ì 8233 RFM10P12, RFM10P15, RFP10P12, RFP10P15 0010233 0 |~~ D T - 3 ^ -2 / F ile N u m b e r 1595 T E R M IN A L DIA G RAM P-Channel Enhancement-Mode

TB334

Abstract: RFP10N12 AN7254 RFM10N12 RFM10N15 RFP10N15 TB-334
Contextual Info: R M S RFM10N12, RFM10N15, RFP10N12, RFP10N15 Semiconductor October 1998 Data Sheet File Number 1445.2 Features 10A, 120V and 150V, 0.300 Ohm, N-Channel Power MOSFETs • 10A, 120V and 150V These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such

RFM10P12

Abstract: RFM10P15 TA940 RFP10P12 RFP10P15 TB334
Contextual Info: RFP10P15 Data Sheet -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching

10N15

Abstract: 10N12 rfm10n rfp10n12
Contextual Info: 2 HARRIS RFM10N12/10N15 RFP10N12/10N15 N-Channel Enhancement Mode Power Field Effect Transistors ugust 1991 Features Packages T0-204AA • 10A, 120V and 150V T0 2 • rDS on = 0.3ft • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

RFM1

Abstract: L92C
Contextual Info: HARIRIS R FM 10N 12/10N 15 RFP10N12/1 ON 15 N-Channel Enhancement Mode Power Field Effect Transistors A u g u st 1991 Packages Features • TO-204AA 10A, 1 2 0V and 1 5 0V • rD S on = 0 .3 ÎÏ • S O A is P ow er-D issip atlo n Lim ited • N anosecond S w itching S peeds

ta9192

Abstract: RFP10N12 RFM10N12 RFM10N15 RFP10N15
Contextual Info: RFM10N12, RFM10N15, RFP10N12, RFP10N15 File Num ber N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 120 V — 150 V ros on : 0.3 fi 1445 Features: co-V-'hI T j O • S O A is pow er-dissipation lim ited ■ N an o seco n d sw itch in g sp e e d s

10n12

Abstract: 92CS-3780I ta9192 RFM10N15 RFM1 RFP mosfets ta9212 A9212 RFM10N12 RFP10N12
Contextual Info: Standard Power M OSFETs- -— -——- RFM10N12, RFM10N15, RFP I0N1I2, RFP10N15 N-Channel Enhancement-Mod Power Field-Effect Transistors — - File Number 1445 % 10 A, 120 V — 150 V

TB334

Abstract: AN7254 AN7260 RFP10N15 SA diode RFP10
Contextual Info: RFP10N15 Data Sheet March 1999 10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs Features These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: RFM10P12, RFM10P15, RFP10P12, RFP10P15 H A R R IS S E M I C O N D U C T O R -10A, -120V and -150V, 0.5 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -10A,-120V and-150V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such

f10p03l

Abstract: RFD10P03LSM RFD10P03L RFD10P03LSM9A RFP10P03L Logic Level p-Channel Power MOSFET TC227
Contextual Info: RFD10P03L, RFD10P03LSM, RFP10P03L S E M I C O N D U C T O R 10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses

2216H

Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

RFL10N15

Abstract: 330 e57
Contextual Info: H A RR IS S E N I C O N D SECT OR bflE D • 430 E57 1 G D S 1 QT 4 t,43 ■ HARRIS HAS P C F 10N 15W P^jF1 0N15D SEMICONDUCTOR January 1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain • Tri-Metal AI-TI-Ni

buz11

Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12

1AMZ transistor

Abstract: RFP-100-1AMZ 1AMZ 1005AM RFP-100-2AMZ RFP-100-3AMZ RFP-100-4AMZ RFP-100-5AMZ RFP-100-6AMZ 10030A
Contextual Info: 100 Watts Flanged Attenuators Model RFP-100-XXAMZ Flanged Attenuators General Specifications Resistive Element: Substrate: Cover: Mounting Flange: Lead s : Features Thick film Beryllium oxide ceramic Alumina ceramic Copper nickel plated per QQ-N-290 99.99% pure silver (.005” thk)