| 32-E1D4 |
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MTI-Milliren Technologies
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Voltage Controlled Crystal Oscillaor (VCXO) |
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| GD32E113C8T6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit MCU, Cortex-M4, 120 MHz, 128 KB Flash, 32 KB SRAM, two 12-bit ADCs/DACs, ten 16-bit timers, USBFS, 1.71-3.6 V, -40 to +85 °C. |
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| APM32E103VET6 |
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Geehy Semiconductor
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120MHz, 512KB Flash, 128KB SRAM, EMMC, 4~16MHz HSECLK, 32.768KHz LSECLK, 8MHz HSICLK, PLL 2~16x, VDD 2.0~3.6V, low power, 2xDMA, JTAG/SWD, 112 I/O, 2xI2C, 3xUSART, 2xUART, 3xSPI, 2xCAN, 1xUSBD, 1xSDIO, 3x12-bit ADC, 2x12-bit DAC, timers, RTC, FPU, CRC, 96-bit UID, multi-package. |
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| GD32E113RBT6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit MCU, Arm Cortex-M4, 120 MHz, 128KB Flash, 32KB SRAM, 2x12-bit 3MSPS ADC, 2x12-bit DAC, 10x16-bit timers, 2x16-bit PWM, 2x16-bit basic, 3xSPI, 2xI2C, 3xUSART, 2xUART, 2xI2S, USBFS, 1.71-3.6V, -40 to +85°C. |
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| GD32E113V8T6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit MCU, Cortex-M4, 120 MHz, 128 KB Flash, 32 KB SRAM, dual 12-bit 3 MSPS ADC/DAC, 10 timers, USBFS, 1.71-3.6 V, -40 to +85°C. |
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| GD32E113VBT6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit, Cortex-M4, 120 MHz, 128 KB Flash, 32 KB SRAM, 1.71-3.6 V, -40 to +85 °C, 2x 12-bit ADC/DAC, 10x 16-bit timers, 2x PWM, 3x SPI, 2x I2C, 3x USART, 2x UART, 2x I2S, USBFS. |
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| APM32E103RET6 |
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Geehy Semiconductor
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32位Cortex-M3，120MHz；512KB Flash，128KB SRAM；2.0～3.6V；112 I/O；2 I2C，3 USART，3 SPI；3 ADC，2 DAC；QFN/LQFP封装。 |
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| APM32E103ZET6 |
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Geehy Semiconductor
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32位Cortex-M3，120MHz；512KB Flash，128KB SRAM；VDD 2.0～3.6V；112个I/O；3个ADC，2个DAC；QFN48/LQFP48/LQFP64/LQFP100/LQFP144封装。 |
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| APM32E103VBT7 |
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Geehy Semiconductor
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最高96MHz，128KB闪存，20KB SRAM，2.0V~3.6V供电，7路DMA，3个16位定时器，1个16位高级定时器，3个USART，2个I2C，2个SPI，1个QSPI，1个USB2.0，1个CAN2.0，CRC单元，SWD和JTAG调试，LQFP100/64/48，QFN36封装。 |
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| APM32E103RBT7 |
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Geehy Semiconductor
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最高96MHz，2.0V~3.6V，128KB闪存，20KB SRAM，FPU，2×12bit ADC，7路DMA，3×16位定时器，USART，C，SPI，USB2.0，CAN2.0。 |
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| GD32E113CBT6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit MCU, Cortex-M4, 120 MHz, 128 KB Flash, 32 KB SRAM, 1.71-3.6 V, -40 to +85 °C, 2x12-bit ADCs, 2x12-bit DACs, timers, PWM, SPIs, I2Cs, USARTs, UARTs, I2Ss, USBFS. |
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| GD32E113T8U6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit MCU, Cortex-M4, 120 MHz, 128 KB Flash, 32 KB SRAM, ADCs, DACs, timers, PWM, SPIs, I2Cs, USARTs, UARTs, I2Ss, USBFS, 1.71-3.6 V, -40 to +85 °C. |
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| APM32E103VCT6 |
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Geehy Semiconductor
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120MHz, 512KB Flash, 128KB SRAM, EMMC, 2.0~3.6V, 112 I/O, 2 I2C, 3 USART, 2 UART, 3 SPI, 2 CAN, 1 USBD, 3 ADC, 2 DAC, QFN48/LQFP48/64/100/144. |
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| GD32E113TBU6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit, Cortex-M4, 120 MHz, 128 KB Flash, 32 KB SRAM, 1.71-3.6 V, -40 to +85 °C, dual 12-bit ADC/DAC, timers, PWM, comm interfaces. |
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| APM32E103RCT6 |
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Geehy Semiconductor
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32-bit Cortex-M3, 120MHz, 512KB Flash, 128KB SRAM, EMMC, 2 DMA, 112 I/Os, 3 SPI, 2 I2C, 3 USART, 2 UART, 2 CAN, USBD, 3 12-bit ADC, 2 12-bit DAC, 2 adv timers, 4 GP timers, 2 basic timers, RTC, FPU, CRC, 96-bit ID, QFN48/LQFP48/LQFP64/LQFP100/LQFP144. |
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| GD32E113R8T6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit MCU, Cortex-M4, 120 MHz, 128 KB Flash, 32 KB SRAM, 2x 12-bit 3 MSPS ADC, 2x 12-bit DAC, 10x 16-bit timers, 2x PWM, 2x I2C, 3x USART, 2x UART, 2x I2S, USBFS, 1.71-3.6 V, -40 to +85 °C. |
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