RF TRANSISTOR SELECTION Search Results

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

AN1232

Abstract: RF Transistor Selection RF POWER TRANSISTOR NPN USE OF TRANSISTOR SD2921
Contextual Info: AN1232 Application note Ruggedness improvement of RF DMOS devices Introduction RF amplifiers often experience impedance mismatch between output and load. Such an impedance mismatch generates a reflected wave towards the RF power transistor, making a much more stringent working environment for the transistor. Working conditions grow critical

GRM39

Abstract: GRM708 RD05MMP1 diode GP 829 6030D
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.

transistor t06

Abstract: RD00HHS1-101 lal04na1r0 RD00HHS1 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA
Contextual Info: ELECTROSTATIC SENSITIVE DEVICE Silicon RF Power Semiconductors OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.

GP 819

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

LAL04NA

Abstract: T113 RD00HHS1 mosfet HF amplifier RD00HHS1-101 3M Touch Systems
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.

212J

Abstract: rd30hvf
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

RD02MUS1

Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD30HVF1

Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

RD01MUS1-101

Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD07MUS2B

Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

mitsubishi top marking

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power

RD16HHF1

Abstract: RD16HHF1 application notes RD16HHF1-101 mosfet HF amplifier transistor d 1680 RD16HHF
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

3M Touch Systems

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

245 transistor

Abstract: RF based industrial SOT502 RF Transistor Selection SOT539
Contextual Info: ISM 2.45 GHz LDMOS RF power transistor portfolio RF power as a robust and highly efficient energy source With nearly a decade of leadership expertise in the industrial, scientific and medical ISM market, NXP has now created the industry’s first dedicated and complete RF power transistor portfolio for

RD09MUP2

Abstract: TRANSISTOR D 1765 720 L 0619 1788
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power

RD20HMF1

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers

rd01mus1 applications

Abstract: RD01MUS1-101 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD30HVF1

Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

RD16HHF1 application notes

Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

MITSUBISHI RF POWER MOS FET

Abstract: 071J
Contextual Info: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3

RD07MUS2B

Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Contextual Info: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.