SD2921 Search Results

Contextual Info: SD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2921 is

6W toroid TRANSFORMER

Abstract: SC1318 SD2921 VK200 556 b uhf vhf transformer schematic
Contextual Info: SD2921  RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS

1200 uF 63V capacitor

Abstract: 1200 uF 63V capacitor 2% SD2921 SD2921-10 VK200 m 404 g
Contextual Info: SD2921-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 150W MIN. WITH 12.5 dB gain @175 MHz . THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES DESCRIPTION

uhf 150w mosfet

Abstract: SC1318 SD2921 SD2921-10 m174 Sc-1321 LE1-75
Contextual Info: SD2921-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

SD2921

Contextual Info: SD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . PRELIMINARY DATA GOLD METALLIZATION NO THERMAL RUNAWAY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB GAIN @ 175 MHz .500 4 LFL M174 epoxy sealed ORDER CODE BRANDING SD2921

SD2921

Abstract: SC13200 SC1318
Contextual Info: SD2921 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2921 is

6W toroid TRANSFORMER

Abstract: 1200 uF 63V capacitor VK200 SD2921 q 1257 sc1317 SC1318
Contextual Info: SD2921  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2921 is

6W toroid TRANSFORMER

Abstract: SD2921-10 uhf 150w mosfet SD2921 pin configuration 20k ohm potentiometer SC1318
Contextual Info: SD2921-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

uhf 150w mosfet

Abstract: SD2921 10000 uF 63V capacitor RF POWER TRANSISTOR 1200 uF 63V capacitor 1200 uF 63V capacitor 2% capacitor 100 uf 63v TC 2,2 uF 20V SD2921-10 VK200
Contextual Info: SD2921-10  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

Contextual Info: SD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS P R E L IM IN A R Y D A T A . GOLD METALLIZATION • NO THERMAL RUNAWAY . COMMON SOURCE CONFIGURATION ■ P o u t = 150W MIN. WITH 12.5 dB GAIN @ 175 MHz p— , .500 4 LFL M 174 e p o x y s e a le d

tp2304

Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12

TSD2921

Contextual Info: SD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

MRF648

Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
Contextual Info: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137

MRF648

Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC

SD2921

Abstract: RF BeO AN1227 SD2921-10
Contextual Info: AN1227 APPLICATION NOTE IMPROVED RF MOSFET RELIABILITY THROUGH PACKAGING ENHANCEMENTS Chuck Leuthauser - Brett Hanson 1. ABSTRACT It is well known that temperature is a critical operating state parameter for today’s electronic industry. Temperature influences device operating state characteristics and performance. As well, it is a crucial

philips ecg master replacement guide

Abstract: ecg semiconductors master replacement guide ECG transistor replacement guide book free philips ecg semiconductors master replacement guide oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes cd 1619 CP fm radio russian transistor cross-reference yd 7377
Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete

AN1232

Abstract: transistor working SD2921 rf power transistor
Contextual Info: AN1232 APPLICATION NOTE RUGGEDNESS IMPROVEMENT OF RF DMOS DEVICES A. Grimaldi - A. Schillaci - A. Vitanza - E. Romano 1. ABSTRACT RF amplifiers often experience impedance mismatch between output and load. Such an impedance mismatch generates a reflected wave towards the RF power transistor, making a much more stringent

Contextual Info: rz 7 SGS-THOMSON ^>7# s T S D 2921 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCTDEVELOPMENTDATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to

ECG transistor replacement guide book free

Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
Contextual Info: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a

ECG transistor replacement guide book free

Abstract: philips ecg master replacement guide one chip tv ic 8873 ecg semiconductors master replacement guide philips ecg semiconductors master replacement guide cd 1619 CP fm radio smd transistor 5AW replacement of bel 187 transistor ecg philips semiconductor master book SUBSTITUTE FOR A bel 187 transistor
Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete

SD1446

Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
Contextual Info: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31

SO42

Abstract: sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100
Contextual Info: Selection Guide April 2000 VHF/UHF and 900 MHz Cellular Applications TYPE FREQ. MHz POUT (W) Gain min. (dB) Vcc (V) Class (%) Efficiency (°C/W) RTHj-c PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S 520 520 520 520 520

mosfet HF amplifier

Abstract: 300 watt hf transistor 12 volt 300 watt mosfet amplifier 200 watt hf mosfet SD2923 100 watt hf transistor 12 volt AN1256 SD2921-10 HF Amplifier 300w 300w rf amplifier
Contextual Info: AN1256 APPLICATION NOTE HIGH-POWER RF MOSFET TARGETS VHF APPLICATIONS by Jim Davies and Brett Hanson 1. ABSTRACT The SD2923, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family; the packaged version is shown in figure

SD2904

Abstract: SD2921 SD2922 SD4013 M113 SD2900 SD2902 SD2903
Contextual Info: SILICON POWER TRANSISTORS VHF/UHF TRANSISTORS Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications. Hi-rel screening and qualification testing is available as on all SGS-THOMSON Microelectronics RF &