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    RD20HMF1 Search Results

    RD20HMF1 Datasheets (1)

    Mitsubishi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    RD20HMF1
    Mitsubishi Silicon MOSFET Power Transistor,900MHz,20W Original PDF 340.32KB 7

    RD20HMF1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MOSFET POWER TRANSISTOR

    Contextual Info: < Silicon RF Power MOS FET Discrete > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for 900MHz-band RF power amplifiers 18.0+/-0.3 applications.


    Original
    rd20hmf1900mhz900mhz-bandrd20hmf1-101+2oct2011mosfet power transistor PDF

    D 1652 transistor

    Abstract: MITSUBISHI RF POWER MOS FET RD20HMF1 0945 transistor 8814 mosfet TRANSISTOR D 1786 transistor 0882 636 MOSFET TRANSISTOR 20W power transistor FET 748
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers


    Original
    rd20hmf1900mhz900mhz-bandrd20hmfe+9d 1652 transistormitsubishi rf power mos fet0945 transistor8814 mosfettransistor d 1786transistor 0882636 mosfet transistor20w power transistorfet 748 PDF

    Contextual Info: < Silicon RF Power MOS FET Discrete > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for 900MHz-band RF power amplifiers 18.0+/-0.3 applications.


    Original
    rd20hmf1900mhz900mhz-bandrd20hmf1-101 PDF

    RD20HMF1

    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers


    Original
    rd20hmf1900mhz900mhz-band PDF

    RD20HMF1

    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers


    Original
    rd20hmf1900mhz900mhz-bandrd20hmfor PDF

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Contextual Info: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


    Original
    30-900mhzh-cr624-eki-0612rd100hhf1+9rd70hvf1rd16hhf1rd15hvf1rd06hvf1rd16hhf1 application notesrd70hvfrd70hhf1rd01mus2rd06hhf1 PDF

    RM15TB-H

    Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
    Contextual Info: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;


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    cm400hacm600hacm600hbcm100dy+15cm150dycm200dycm300dycm400dycm600dyrm15tb-hrm10tb-hra45h8087mrd00hhf1rm30tn-hrm10tbrm250hb-10fps11023-aps11023mitsubishi ps11023-a PDF