MARKING W3 SOT23 TRANSISTOR
Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
|
Original
|
mpsh81mmbth81ot-23marking w3 sot23 transistor+8rf transistor mark code h1transistor marking code ne sot-23marking code w2 sot23pnp rf transistorsot23 transistor marking p2sot-23 marking 3dmarking 3d sot-23marking code mps
|
PDF
|
|
Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
|
Original
|
pn918mmbt918ot-23 |
PDF
|
CBVK741B019
Abstract: F63TNR MMBTH20 MPSH20 PN2222N Q100 transistor mark code t1 Ohmite RF Z-235 MPS-H20
Contextual Info: MPSH20 / MMBTH20 MPSH20 MMBTH20 C E C B TO-92 E B SOT-23 Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*
|
Original
|
mpsh20mmbth20ot-23cbvk741b019+7f63tnrpn2222nq100transistor mark code t1ohmite rfz-235mps-h20
|
PDF
|
transistor j210
Abstract: 212 t sot-23
Contextual Info: G S G S TO-92 SOT-23 D Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from
|
Original
|
mmbfj210mmbfj211mmbfj212ot-23+2transistor j210212 t sot-23
|
PDF
|
212 s sot-23
Abstract: 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211 MMBFJ211
Contextual Info: J211 / J212 / MMBFJ211 / MMBFJ212 MMBFJ211 MMBFJ212 J211 J212 G S G S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient
|
Original
|
mmbfj211mmbfj212ot-23212 s sot-23+862w sot-23rf transistor mark code h1212 t sot-23j212j211 topcbvk741b019f63tnrj211
|
PDF
|
MPSH10 fairchild transistor
Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
|
Original
|
mpsh10mmbth10ot-23mpsh10 fairchild transistor+7mmbth10 spice modeltransistor top mark 3e ltransistor bel 100cbvk741b019f63tnrpn2222ntransistor c 3223
|
PDF
|
CBVK741B019
Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
|
Original
|
mpsh10mmbth10ot-23cbvk741b019+5f63tnrpn2222npap transistor power high frequencytransistor bel 100rf transistor mark code h1
|
PDF
|
|
Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
|
Original
|
pn918mmbt918ot-23 |
PDF
|
CBVK741B019
Abstract: F63TNR MMBT918 PN2222N PN918 RF 107 transistor tc 144
Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
|
Original
|
pn918mmbt918ot-23cbvk741b019+4f63tnrpn2222nrf 107transistor tc 144
|
PDF
|
mmbt918
Abstract: PN918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
|
Original
|
pn918mmbt918ot-23intermediate frequency semiconductor rf+5cbvk741b019f63tnrpn2222nnpn transistor wc14inch
|
PDF
|
MPSH10 s parameters
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency
|
Original
|
mpsh10mmbth10ot-23mpsh10 s parameters |
PDF
|
nk90
Abstract: mje321 BF-133 CBVK741B019 F63TNR MMBTH81 MPSH81 PN2222N pnp rf transistor Bf133
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
|
Original
|
mpsh81mmbth81ot-23nk90+7mje321bf-133cbvk741b019f63tnrpn2222npnp rf transistorbf133
|
PDF
|
rf transistor mark code H1
Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
|
Original
|
mpsh11mmbth11ot-23rf transistor mark code h1+6cbvk741b019f63tnrpn2222nq100z-235d3000
|
PDF
|
CBVK741B019
Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
Contextual Info: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
|
Original
|
mpsh11mmbth11ot-23cbvk741b019+5f63tnrpn2222nq100z-235transistor 26
|
PDF
|
|
|
|
Contextual Info: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency
|
Original
|
pn5179mmbt5179ot-23 |
PDF
|
Transistor J310
Abstract: J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note
Contextual Info: MMBFJ309 MMBFJ310 J309 J310 G D G S TO-92 SOT-23 D S Mark: 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.
|
Original
|
mmbfj309mmbfj310ot-23transistor j310+7j309j310j310 applicationscbvk741b019f63tnrpn2222nj310 application note
|
PDF
|
PN5179
Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
Contextual Info: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency
|
Original
|
pn5179mmbt5179ot-23cbvk741b019+5f63tnrmps5179pn2222ntransistor c 3223mjc2
|
PDF
|
|
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
|
Original
|
mpsh81mmbth81ot-23 |
PDF
|
6u sot-23
Abstract: j310 equivalent 1175 yig oscillator J309 application note rf transistor mark code H1 CBVK741B019 F63TNR J309 J310 MMBFJ309
Contextual Info: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and
|
Original
|
mmbfj309mmbfj310ot-236u sot-23+8j310 equivalent1175 yig oscillatorj309 application noterf transistor mark code h1cbvk741b019f63tnrj309j310
|
PDF
|
6u sot-23
Abstract: J309 CBVK741B019 F63TNR J310 MMBFJ309 MMBFJ310 PN2222N J309-J310 UA309
Contextual Info: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and
|
Original
|
mmbfj309mmbfj310ot-236u sot-23+7j309cbvk741b019f63tnrj310pn2222nj309-j310ua309
|
PDF
|
mpsh81 model
Abstract: MMBTH81 CBVK741B019 F63TNR MPSH81 PN2222N NE-21 BF-133
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
|
Original
|
mpsh81mmbth81ot-23mpsh81 model+5cbvk741b019f63tnrpn2222nne-21bf-133
|
PDF
|
rf transistor mark code H1
Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Contextual Info: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
|
Original
|
mpsh24mmbth24ot-23mpsh11+4rf transistor mark code h1cbvk741b019f63tnrpn2222n
|
PDF
|
CBVK741B019
Abstract: F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Contextual Info: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for
|
Original
|
mpsh24mmbth24ot-23mpsh11+3cbvk741b019f63tnrpn2222n
|
PDF
|
erf5e
Abstract: ERF10E ERF2E
Contextual Info: Wirewound Resistors Thin Type Wirewound Resistors (Thin Type) Type: ERF2E, 3E, 5E, 10E (2 W, 3 W, 5 W, 10 W) These low inductance and non-flammable resistors have been developed for the applications such as protection of output transistor in AV equipment and current detection of switching power supply.
|
Original
|
erf5eerf10eerf2e |
PDF
|
