J211 Search Results

transistor j210

Abstract: J210 J211 J212 marking J212
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212

SAE 60 filter

Abstract: endevco 31875 ISO6487 J211 endevco endevco model 136 dc amplifier J211 LED Digital Panel meter 31875-0165-0
Contextual Info: Model 31875 Programmable filter Features Description • 4-pole low pass Butterworth • 20 corner frequencies available • 10 Hz to 80 kHz in 1, 2, 4, 6 and 8 steps • Self-identifying ID for the frequency corner installed in model 133/136 amplifiers • Filter options available for SAE J211 and

2N5911

Abstract: SSTJ212 transistor j210 J210 J211 J212 SSTJ211
Contextual Info: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 J211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/J211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25

2N5911-12

Abstract: 2N5912CHP J210 J211 J212 U257 U312 U312CHP J211 jfet siliconix Siliconix Dual N-Channel JFETs
Contextual Info: n-channel JFETs designed f o r . k> H Siliconix Performance Curves NZF See Section 5 • G e n e r a l P u rp ose A m p lifie rs o < - K> BEN EFITS • High Gain G ps = 7000 /¿mho Minimum J211, J212 High Input Impedance IQSS = 100 pA Maximum Cjss = 5 pF Typical

J211 jfet siliconix

Abstract: J211
Contextual Info: J211 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J211 FEATURES DIRECT REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted

"Z2" marking

Contextual Info: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 J211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/J211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25

SST5484

Contextual Info: Temic S e m i c o n d u c t o r s W S08 T0220 TOS2 T0237 GateUafcage rpA> Ij>ss , u m Mifl T092 2 lead Max Min Max Min T092 (3 lead) . 9ft . Typ Max | Max Typ ] Max Comments T0220AA (T092) J210 15 12 J211 20 12 15 40 12 J212 -25 -3 -2.5 ' -4.5 -4 ~6 -1 0 0

Siliconix N-Channel JFET

Contextual Info: J211 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J211 FEATURES DIRECT REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF

endevco 136

Abstract: endevco model 136 dc amplifier endevco 31875 J211 endevco endevco 136 signal conditioner Endevco amplifier endevco model 136 amplifier Butterworth Endevco ISO6487
Contextual Info: Programmable Filter ENDEVCO Model 31875 MODEL 31875 • • • • 4-Pole Low Pass Butterworth 20 Corner Frequencies Available 10 Hz to 80 kHz in 1, 2, 4, 6 and 8 Steps Self-identifying ID for the Frequency Corner Installed in Model 133/136 Amplifiers • Filter Options Available for SAE J211 and

J212

Contextual Info: J2 1 0 .J2 1 1 .J2 1 2 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER LINEAR SYSTEMS Linear Integrated Systems FEATURES HIGH GAIN gfe = 7000|imho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lQSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C|##= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS

Contextual Info: MOTOROLA Order this document by J21195/D SEMICONDUCTOR TECHNICAL DATA PNP M J21195* NPN M J21196* Silicon Power Transistors The M J21195 and M J21196 u tiliz e P e rfo ra te d E m itte r te c h n o lo g y and are specifically designed for high power audio output, disk head positioners and linear

Contextual Info: J210, J211, J212 SSTJ210, J211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER TO-92 TO-92 FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE Plastic D IGSS= 100pA MAXIMUM G CISS= 5pF TYPICAL S ABSOLUTE MAXIMUM RATINGS

low igss

Abstract: J212 J211 J210 transistor j210 J210 equivalent
Contextual Info: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL

212 s sot-23

Abstract: 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211 MMBFJ211
Contextual Info: J211 / J212 / J211 / MMBFJ212 J211 MMBFJ212 J211 J212 G S G S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient

3539 transistor

Abstract: MJ21193 mj21194
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M J21193* IIB U Silico n Pow er T ransistors M J21194* The J21193 and J21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

Contextual Info: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 J211 J211 SSTJ212 J212 PRODUCT SUM M ARY Part Number VGS off (V) V (BH)GSS M in (V) 9 fs Min (mS) loss Ml*1 (mA) J2 1 0 - 1 to - 3 -2 5 4 J/S S T J211 - 2 .5 t o -4 .5 -2 5 6 7 -2 5 7 15 J /S S T J 2 1 2

Contextual Info: J210. J211. J212 LINEAR SYSTEMS LOW NOISE N-CHANNEL J-FET G EN ERAL PURPO SE AMPLIFIER Linear Integrated Systems FEATURES HIGH GAIN = 7000^mho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lQSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C|88= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS

transistor j210

Abstract: J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212
Contextual Info: J210/211/212 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J211 –2.5 to –4.5 –25 6 7 J212 –4 to –6 –25 7 15 J211, For applications information see AN104, page 1.

ultra low igss pA mosfet

Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
Contextual Info: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL

Contextual Info: J210, J211, J212 / SSTJ210, J211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE TO-92 IGSS= 100pA MAXIMUM CISS= 5pF TYPICAL Plastic D ABSOLUTE MAXIMUM RATINGS

JFs sot-23

Abstract: J212 J212 we J211 MMBFJ211 MMBFJ212 T092
Contextual Info: J211 / J212 / J211 /MMBFJ212 Discrete POW ER & Signal Technologies National Semiconductor" J211 MMBFJ212 J211 J212 SOT-23 Mark: 62 W /6 2X N-Channel General Purpose Amplifier This device is designed for VHF/UHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise,

Contextual Info: T em ic J/SSTJ210 Series S e m i c o n d u c t o r s N-Channel JFETs J210 J211 J212 J211 SSTJ212 Product Summary Part Number V G S off (V ) V ( b r )G SS M i n ( V ) gfe Min (mS) Idss Min(mA) 3 210 -1 to -3 -2 5 4 2 J /S S T J 2 U - 2 .5 to - 4 .5 -2 5

J210

Abstract: J211 J212
Contextual Info: H n-channel JFETs designed f o r . S ilic o n ix P erform ance Curves N ZF Se e Section 5 • G e n e r a l P u rp ose A m p lifie rs k> o < - K> B E N E F IT S • High Gain G p s = 7000 /¿mho Minim um J211, J212 • High Input Impedance IQ S S = 100 p A M axim um

Contextual Info: J210. J211. J212 LINEAR SYSTEMS LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems FEATURES HIGH GAIN gfs = 7000 Urn ho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lGSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C. ISS = 5pF TYPICAL r ABSOLUTE MAXIMUM RATINGS