J212 Search Results

transistor j210

Abstract: J210 J211 J212 marking J212
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J210; J211; J212 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 1997 Dec 01 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212

2N5911

Abstract: SSTJ212 transistor j210 J210 J211 J212 SSTJ211
Contextual Info: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 J212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/J212 –4 to –6 –25

2N5911-12

Abstract: 2N5912CHP J210 J211 J212 U257 U312 U312CHP J211 jfet siliconix Siliconix Dual N-Channel JFETs
Contextual Info: n-channel JFETs designed f o r . k> H Siliconix Performance Curves NZF See Section 5 • G e n e r a l P u rp ose A m p lifie rs o < - K> BEN EFITS • High Gain G ps = 7000 /¿mho Minimum J211, J212 High Input Impedance IQSS = 100 pA Maximum Cjss = 5 pF Typical

Contextual Info: J212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 FEATURES DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted

"Z2" marking

Contextual Info: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 J212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/J212 –4 to –6 –25

SST5484

Contextual Info: Temic S e m i c o n d u c t o r s W S08 T0220 TOS2 T0237 GateUafcage rpA> Ij>ss , u m Mifl T092 2 lead Max Min Max Min T092 (3 lead) . 9ft . Typ Max | Max Typ ] Max Comments T0220AA (T092) J210 15 12 J211 20 12 15 40 12 J212 -25 -3 -2.5 ' -4.5 -4 ~6 -1 0 0

6146w

Abstract: 6159W 6159 TUBE tube 6159 7357 "Power Tube" 6159
Contextual Info: 6159W/7357 Beam Power Tube HIGH POWER S E N S IT IV IT Y 90 WATTS CW INPUT IC A S UP TO 60 Me 60 WATTS CW INPUT ( I CAS) AT 175 Me F o r Use Under S e v e r e Shock and V i b r a t i o n The 6 i 5 9 W i l 3 5 1 is follow ing items: the same as the 6146W/J212 excep t

SS211

Abstract: ss 211
Contextual Info: N-Channel JFET caioqic CORPORATION J210 -J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.

J212

Contextual Info: J2 1 0 .J2 1 1 .J2 1 2 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER LINEAR SYSTEMS Linear Integrated Systems FEATURES HIGH GAIN gfe = 7000|imho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lQSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C|##= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS

Contextual Info: J210, J211, J212 SSTJ210, SSTJ211, J212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER TO-92 TO-92 FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE Plastic D IGSS= 100pA MAXIMUM G CISS= 5pF TYPICAL S ABSOLUTE MAXIMUM RATINGS

low igss

Abstract: J212 J211 J210 transistor j210 J210 equivalent
Contextual Info: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL

212 s sot-23

Abstract: 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211 MMBFJ211
Contextual Info: J211 / J212 / MMBFJ211 / J212 MMBFJ211 J212 J211 J212 G S G S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient

J211

Abstract: 62w sot-23 N-Channel RF Amplifier J212 rf amplifier
Contextual Info: J211 / J212 / MMBFJ211 / J212 MMBFJ211 J212 J211 J212 G G S S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient

SSTJ210

Abstract: J210
Contextual Info: N-Channel JFET LLC J210 – J212 / SSTJ210 – J212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,

J210

Abstract: SSTJ210 transistor j210 marking sot-23 212 s sot-23 J212 SSTJ211 SSTJ212 J210 equivalent
Contextual Info: N-Channel JFET CORPORATION J210 – J212 / SSTJ210 – J212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,

Contextual Info: J210. J211. J212 LINEAR SYSTEMS LOW NOISE N-CHANNEL J-FET G EN ERAL PURPO SE AMPLIFIER Linear Integrated Systems FEATURES HIGH GAIN = 7000^mho MINIMUM J211, J212 HIGH INPUT IMPEDANCE lQSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C|88= 5pF TYPICAL ABSOLUTE MAXIMUM RATINGS

J212

Abstract: SMPJ212 1NA15
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-57 B-57 01/99 J212 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifier ¥ General Purpose Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

transistor j210

Abstract: J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212
Contextual Info: J210/211/212 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J211 –2.5 to –4.5 –25 6 7 J212 –4 to –6 –25 7 15 J211, For applications information see AN104, page 1.

ultra low igss pA mosfet

Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
Contextual Info: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL

Contextual Info: J210, J211, J212 / SSTJ210, SSTJ211, J212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE TO-92 IGSS= 100pA MAXIMUM CISS= 5pF TYPICAL Plastic D ABSOLUTE MAXIMUM RATINGS

Contextual Info: J212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 FEATURES DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted

Contextual Info: d o tfi1' caloqic CORPORATION N-ChannelJFET v J210 - J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.

Contextual Info: J212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 FEATURES DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF

JFs sot-23

Abstract: J212 J212 we J211 MMBFJ211 MMBFJ212 T092
Contextual Info: J211 / J212 / MMBFJ211 /J212 Discrete POW ER & Signal Technologies National Semiconductor" MMBFJ211 J212 J211 J212 SOT-23 Mark: 62 W /6 2X N-Channel General Purpose Amplifier This device is designed for VHF/UHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise,