dual jfet vhf
Abstract: u257 siliconix 2N5911-12 2N5912CHP U257 U257CHP U312 U312CHP 2n5911 Siliconix N-Channel JFET
Contextual Info: U312 n-channel JFET designed for S Siliconix . Performance Curves NZF See Section 5 • VHF/UHF Common-Gate Amplifiers BEN EFITS • High Power Gain 10 dB Typical at 450 MHz, Common Gate ■ M ixers • Low Noise N F = 3.5 dB Typical at 4 50 MHz ABSOLUTE M A X IM U M R A TIN G S 25°C
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dual jfet vhfu257 siliconix2n5911-122n5912chp+6u257u257chpu312u312chp2n5911siliconix n-channel jfet
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u257 siliconix
Abstract: 2N5912CHP U257 Siliconix Dual N-Channel JFET 2N5911-12 U257CHP U312 U312CHP "N-Channel JFET" 2n5911
Contextual Info: Kl 14-18 H n-channel JFET Siliconix designed f o r . . . Performance Curves NZF See Section 5 • Analog Switches B EN EFITS • ■ Choppers ■ Commutators No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from
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u257 siliconix2n5912chpu257siliconix dual n-channel jfet+62n5911-12u257chpu312u312chpn-channel jfet2n5911
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2N5911-12
Abstract: 2N5912CHP J210 J211 J212 U257 U312 U312CHP J211 jfet siliconix Siliconix Dual N-Channel JFETs
Contextual Info: n-channel JFETs designed f o r . k> H Siliconix Performance Curves NZF See Section 5 • G e n e r a l P u rp ose A m p lifie rs o < - K> BEN EFITS • High Gain G ps = 7000 /¿mho Minimum J211, J212 High Input Impedance IQSS = 100 pA Maximum Cjss = 5 pF Typical
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2n5911-122n5912chpj210j211+6j212u257u312u312chpj211 jfet siliconixsiliconix dual n-channel jfets
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Dual N-Channel JFET
Abstract: u257 2n5911 u257 siliconix 2N5911-12 2N5912CHP U257CHP U312 U312CHP sae 1979
Contextual Info: U257 matched dual n-channel JFET designed for . S S ilic o n ix . Performance Curves NZF See Section 5 • W ideband Differential Amplifiers B E N E F IT S • High Gain through 100 M Hz gfs = 5000 jumho Minimum • Matching Characteristics Specified TO -78
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dual n-channel jfetu2572n5911u257 siliconix+62n5911-122n5912chpu257chpu312u312chpsae 1979
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2N5911-12
Abstract: 2N5911 u257 2N5912CHP U257CHP U312 U312CHP
Contextual Info: NZF GATE ALSO BACKSIDE CONTACT n-channel JFET designed far . . . B S ilic o n ix • High Frequency Amplifiers B E N E F IT S: ■ Mixers • High Power Gain ■ Oscillators • Low Input Capacitance TYPE PACKAGE P R IN C IP A L D E V IC E S Single TO-52 TO-78
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2n5911-12u440-41u312chp2n5912chp+4u257chp2n5911u257u312
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K212 jfet
Abstract: K212-18 Siliconix Dual N-Channel JFETs 2N5911-12 2N5912CHP K211-18 U257 U257CHP U312 U312CHP
Contextual Info: I Cl n-channel JFETs designed fo r d s S . Silicon ix Performance Curves NZF See Section 5 • G en eral Purpose A m plifiers B EN EFITS I • High Gain G ps = 7000 ¿imho Minimum K 211-18, K212-18 High Input Impedance I q SS = 100 pA Maximum c iss = 5 pF Typical
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k211-18k212-18k212 jfetsiliconix dual n-channel jfets+62n5911-122n5912chpu257u257chpu312u312chp
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cp4071
Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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68b09sn74als04bnsn74als08nsn74als00an+16ca3046ua733lm311plm318ca309478h05cp4071data sheet ic 74082n4891ic 7408mda970a2mda25001854-0071mda25022n4342ic ttl 7400
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e304 fet
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that
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k2874244449silxhxe304 fetjfet transistor replacement guide j201+8bfq13e420 dual jfetjfet tis88siliconix fet design cataloge112 jfetjfet e300bfw10 jfet2n3686
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U257
Abstract: 2N5911-12 2N5912 2N5912CHP U312 U312CHP Siliconix Dual N-Channel JFETs
Contextual Info: • • Performance Curves NZF See Section 5 • BENEFITS • High Gain through 100 MHz gfs > 5000 ¿¿mho • Matching Characteristics Specified • Wideband D ifferential Amplifiers 2N5912 designed fo r H S ilic o n ix 2N5911 matched dual n-channel JFETs
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u2572n5911-122n59122n5912chp+3u312u312chpsiliconix dual n-channel jfets
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853impattc5088 transistortransistor c3207tlo84cn+7sec c5088in5355bd2817ac3207 transistortoshiba f630tlo81cpmc74hc533n
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J114
Abstract: 2N5911-12 2N5912CHP U257 U257CHP U312 U312CHP Dual N-Channel JFET
Contextual Info: n-channel JFET designed for Siliconix Performance Curves NZF See Section 5 • A nalog Switches B EN EFITS • • B • • ■ Choppers ■ Commutators No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from
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j1142n5911-122n5912chpu257+4u257chpu312u312chpdual n-channel jfet
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