U312 Search Results

dual jfet vhf

Abstract: u257 siliconix 2N5911-12 2N5912CHP U257 U257CHP U312 U312CHP 2n5911 Siliconix N-Channel JFET
Contextual Info: U312 n-channel JFET designed for S Siliconix . Performance Curves NZF See Section 5 • VHF/UHF Common-Gate Amplifiers BEN EFITS • High Power Gain 10 dB Typical at 450 MHz, Common Gate ■ M ixers • Low Noise N F = 3.5 dB Typical at 4 50 MHz ABSOLUTE M A X IM U M R A TIN G S 25°C

Contextual Info: 勤益投資控股股份有限公司 制度規範說明書 編 號 GTM-MNG-0015 主 董事監察人及經理人之 生效日期 頁次 1/2 題 道德行為準則 103.11.17 版本 2 ㄧ、為強化本公司公司治理，依據證交所九十三年十一月十一日台證上字第 0930028186 號函

stu312d

Abstract: pf 312D U312D To-252-4 stu312
Contextual Info: S T U312D S amHop Microelectronics C orp. Oct 08 2008 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -14A R DS (ON) ( m Ω )

stu312d

Abstract: stu312 U312D 312d pf 312D STU31
Contextual Info: S T U312D Green Product S amHop Microelectronics C orp. Oct 08 2008 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A Max V DS S ID

Contextual Info: S i521 4 4 P CI-E X P R E S S 1 ԙ Ƚ 2 ԙ ૂ 3 ԙ ഑ 䗉 ࠰ ᰬ 䫕 ਇ ⭕ ಞ ⢯⛯        PCI-Express 1 ԙȽ 2 ԙૂ 3 ԙ޲ᇯ 100 MHz с᭥ᤷѨ㺂 ATA SATA քࣕ㙍θᐤ࠼䗉࠰ ᰖ䴶㓾ㄥ⭫䱱 ਺ᰬ䫕щ⭞䗉࠰ֵ㜳⺢Ԭᕋ㝐

Contextual Info: ‫ ޓ‬DAYLIGHT‫ޓ‬SENSOR PT23GP11 26 2ߪ‫ߩੱޔ‬Ყⷞᗵᐲ㧔dzOPO㧕ߦࡇ࡯ࠢᗵᐲࠍㄭߠߌߚࡈࠜ࠻࠻࡜ࡦࠫࠬ࠲ߢߔ‫ޕ‬శ㔚ᵹߪ‫✢⋥ߊߥࠠ࠷࡜ࡃޔ‬ ᕈߦఝࠇ‫ޔ‬ᾖ᣿‫ߩ╬⸘ᤨޔ‬᣿ᥧߦࠃࠆ101 ߿‫ޔ‬ૐ޿ᾖᐲᬌ಴▸࿐ߢߩ↪ㅜߦ૶↪ߢ߈߹ߔ‫ޕ‬

Contextual Info: ᾖᐲ࠮ࡦࠨ㧵㧯 ᾖᐲ࠮ࡦࠨ 㧵㧯 ‫ޓ‬Daylight ‫ޓ‬sensor IC 㪧㪠㪚㪏㪐㪍㪇㪈䈲ㄭⷞᗵᐲಽశ․ᕈ䋨㱗㫇㪔㪌㪉㪇㫅㫄䋩䉕ᜬ䈦䈢ᾖᐲ䉶䊮䉰㪠㪚䈪䈜䇯 䉮䊷䊂䊮䉲⁛⥄䈱䊐䉞䊦䉺䊧䉴᭴ㅧ䉕ᜬ䈤䇮㐳ᵄ㐳Ꮺၞ䈲ᗵᐲ䉷䊨䈮ᛥ䈋䈩䈇䉁䈜䇯

UC754

Abstract: UC758
Contextual Info: ATCdL LOW P O W E R FIELD E FFEC T T R A N S IS T O R S IMliOMtL ¡PÖJM^©©!! G^tgKlÄMilL Type Number •BVDgo or Case BVgss Style Min (T O - Geometry (V) Ciss Max (pF) Crss Max (PF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2n5105

Abstract: 2N5245 2N5485 2N5670 pin 2N3819 2N3821 2N3822 2N3823 2N4223 2N4224
Contextual Info: /ÄYM,© 1 ^©[nlÄMKlIlIL [FITP L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Case Type Style Humber (TO- Geometry 2N3819 72 2N3821» 72 2N3822» 72 2N3823« 72 2N4223 72 2N4224 72 72 2N4416 2N4416A 72 2N5078 72 2N5103 72 2N5104 72 72 2N5105

2N3819 equivalent

Abstract: UC734 2N5668 2N5078 2N3822 equivalent 2n5105 2N5485 U1994E DSASW0036854 2N3821
Contextual Info: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) 2N3819 72 FN2.5 25 8.0 2N3821 72 FN3.6 50 6.0 2N3822 72 FN3.6 50 6.0 2N3823 72 FN2.5 30 6.0 2N4223 72 FN2.5 30 6.0 2N4224 72 FN2.5 30 6.0 2N4416 72 FN2.5 30 4.0 2N4416A 72 FN2.5 30

PS0170

Abstract: 99C0879-001 EZ80F910300ZCOG PS0270
Contextual Info: Product Update Errata for eZ80F910300ZCOG/ eZ80F915050MODG/eZ80F916050MODG/ UP012303-0910 eZ80L925048MODG/eZ80F917050SBCG Errata for eZ80F910300ZCOG with eZ80F91 e-NET Module/ eZ80F915050ZCOG eZ80F91 e-NET Module/eZ80F916050ZCOG eZ80F91 e-NET Module/eZ80F917050SBCG Zdots

Contextual Info: ' g , 3 <Y_ 2 -7 ER Surface Mount Inductors See pg. 36, fig. 7 & 8 for dimensions ions~^ Tape & Reel Available These products should be considered in any situation which calls for low profile surface mount inductors. Applications include notebook computers, pagers, GPS etc.

relay Re 04501

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
Contextual Info: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997

u257 siliconix

Abstract: 2N5912CHP U257 Siliconix Dual N-Channel JFET 2N5911-12 U257CHP U312 U312CHP "N-Channel JFET" 2n5911
Contextual Info: Kl 14-18 H n-channel JFET Siliconix designed f o r . . . Performance Curves NZF See Section 5 • Analog Switches B EN EFITS • ■ Choppers ■ Commutators No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from

2N5911-12

Abstract: 2N5912CHP J210 J211 J212 U257 U312 U312CHP J211 jfet siliconix Siliconix Dual N-Channel JFETs
Contextual Info: n-channel JFETs designed f o r . k> H Siliconix Performance Curves NZF See Section 5 • G e n e r a l P u rp ose A m p lifie rs o < - K> BEN EFITS • High Gain G ps = 7000 /¿mho Minimum J211, J212 High Input Impedance IQSS = 100 pA Maximum Cjss = 5 pF Typical

U3 Series

Abstract: U312D
Contextual Info: U3 SERIES DC/DC MODULES Applications • Servers, Switches and Data Storage • Wireless Communications • Distributed Power Architecture • Semiconductor Test Equipment • Networking Gear • Data Communications • Telecommunications • Industrial / Medical

Dual N-Channel JFET

Abstract: u257 2n5911 u257 siliconix 2N5911-12 2N5912CHP U257CHP U312 U312CHP sae 1979
Contextual Info: U257 matched dual n-channel JFET designed for . S S ilic o n ix . Performance Curves NZF See Section 5 • W ideband Differential Amplifiers B E N E F IT S • High Gain through 100 M Hz gfs = 5000 jumho Minimum • Matching Characteristics Specified TO -78

2N5911-12

Abstract: 2N5911 u257 2N5912CHP U257CHP U312 U312CHP
Contextual Info: NZF GATE ALSO BACKSIDE CONTACT n-channel JFET designed far . . . B S ilic o n ix • High Frequency Amplifiers B E N E F IT S: ■ Mixers • High Power Gain ■ Oscillators • Low Input Capacitance TYPE PACKAGE P R IN C IP A L D E V IC E S Single TO-52 TO-78

Burndy PAT750-18V parts breakdown

Abstract: BURN GI CONDUIT lp 1610 for door bell Burndy Y35 hypress parts breakdown ci an 7591 NEC c317 KPC 45 94V SAE-AS7928 burndy Y35 Hypress owner manual burndy patriot pat750-18v replacement parts
Contextual Info: Master Catalog Solutions for the Electrical Industry Experience. Technology. Answers. TM Customer Service Department 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 1-603-647-5299 International Canada 1-800-361-6975 (Quebec) 1-800-387-6487 (All other provinces)

Contextual Info: Data Sheet July 2001 TSOT0410G2 SONET/SDH STS-192 Overhead and Path Processor Features General • Section, line, and path overhead layer termination for a SONET STS-192 SDH STM-64 or four STS-48 (STM-16) signals. ■ Supports any valid mix of STS-1 and concatenated

NDF 4003

Abstract: 5N 3011 0x830B
Contextual Info: Data Sheet May 2004 TSOT0410G4 SONET/SDH STS-192 Overhead and Path Processor Features ! Extracts and outputs, on a serial link, all transport overhead bytes in the receive data and inserts any, or all, transport overhead bytes in the transmit data using a corresponding serial input.

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)