UC105 Search Results

Contextual Info: UC1054CN Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 5.0 Load Current Max. (A)10m Drop-Out Volt Max. P(D) Max. (W) Nom. Supp (V) Minimum Operating Temp (øC)0.0 Maximum Operating Temp (øC)70 Package StyleDIP

Contextual Info: UC1054MJ Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 5.0 Load Current Max. (A)10m Drop-Out Volt Max. P(D) Max. (W) Nom. Supp (V) Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 Package StyleDIP

C1054

Abstract: 1054M lt1044
Contextual Info: IN T E G R A T E D I i r ‘ m c /1 M UC1054M UC1054C c ir c u it s • . » . . - r r . n r . r - U IM IT R O D E Switched Capacitor Voltage Converter With Regulator PRELIMINARY FEATURES DESCRIPTION • 100m A O utput current The U C 1054 is a m onolithic integrated circuit usable for voltage converting and regulating.

Contextual Info: UC1054CJ Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 5.0 Load Current Max. (A)10m Drop-Out Volt Max. P(D) Max. (W) Nom. Supp (V) Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)70 Package StyleDIP

UC754

Abstract: UC758
Contextual Info: ATCdL LOW P O W E R FIELD E FFEC T T R A N S IS T O R S IMliOMtL ¡PÖJM^©©!! G^tgKlÄMilL Type Number •BVDgo or Case BVgss Style Min (T O - Geometry (V) Ciss Max (pF) Crss Max (PF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max

TIL78

Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
Contextual Info: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE

TIL78

Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

2N4241

Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

U1897E

Abstract: U1899E 2N4978 U1898E uc250 uc251 2N4393 2N4858 2N4977 UC130
Contextual Info: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) Crss Max (pF) Vgs (off) Min (V) Vgs (off) Max (V) Idss Min (v) 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4856 2N4856A 2N4857 2N4857A 2N4858 2N4858A

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

HS108

Abstract: HS-108 BU-805 underfloor duct BU-509 E-16592 SPLN-108 XC-846 HC-106 steel city
Contextual Info: 412034.E01 5/7 5/7/03 4:51 PM Page E1 Commercial and Die Cast Fittings Conduit Fittings. . . . . . . . . . . . . . . . . . . . . . . . . . . . E2 Thinwall Conduit Fittings EMT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E3-E14 Rigid/Intermediate Grade

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)

U1898E

Abstract: 2n4447 UC251
Contextual Info: ra@ iyj Tr ©ätäcl © LOW P O W E R FIELD E FFE C T T R A N S IS T O R S WO¥©D» 10 M=©CMG*L FUT? •BVDgo or BVgss Min (V Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) Idss Min Max (mA) Igss or •Idgo Max (nA) R(on) Max (ohms) III Typ* Number

2NB906

Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

BFS67

Abstract: 310M ft06 HSC5458 200S A190 A192 A193 A390 T072
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 1 10. SILICON PNP 11. SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE M A X . RATIINGS Ä 2 5 C II MIN. M A X Pc T 6 T T IDERATE FREE I'A E I Ic

kk3819

Abstract: kk4223
Contextual Info: T -3 5 -2 5 ' sod Ô3bflbü2 DÜDBbflD S4T 4ÖE D SOLITRON DEVICES INC A T M , © L O W P O W E R FIELD E F F E C T T R A N S I S T O R S m m /M L •BVDgo o: BVgss Case Min Type Style Numbei T O - I Geometi ? (V 18 FN22.2 50 2N3066 2N3067 18 FN22.2

2N3824

Abstract: 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392
Contextual Info: LOW P O W E R FIELD EFFE C T T R A N S IS T O R S IF if: Type Number Case Style T O - Geometry •BVDgo or BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) _ Idss Max Min (mA) Igss or •Idgo Max (nA) R(on) Max (ohms) T(on) Max (nS) T(off)

ATML U 106

Abstract: ATML 350 UC758 2N5902 TO-92 2N5045 J2N5670 2N3966 ATML U ATML U 010 2N3070
Contextual Info: flnlitran_ [F>[a iB y)©'ir ©Mm.©© Devices. Inc. L O W P O W E R FIE L D E F F E C T T R A N S I S T O R S (ÜHNIIIIMIL Type Num ber •BVDgo or BVgss C ase Min Style ( T O - ) G eom etry (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min

2n5103

Contextual Info: Ä T T Ä [L LOW PO W ER FIELD E FFEC T T R A N S IS T O R S Type Number Case Style (TO— Geometr r •BVDgo oi BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max (mA) 9.5 4.5 2.2 9.5 4.5

310M

Abstract: CM601 02N 60P ft06 HSC5458 200S A190 A192 A193 A390
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T