R07DS04 Search Results

RJK6018DPK

Contextual Info: Preliminary Datasheet RJK6018DPK R07DS0495EJ0200 Previous: REJ03G1537-0100 Rev.2.00 Jul 22, 2011 600 V - 30 A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current

Contextual Info: Preliminary Datasheet RQA0009TXDQS R07DS0492EJ0200 Previous: REJ03G1520-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)

Contextual Info: Preliminary Datasheet RJL5018DPK R07DS0498EJ0200 Previous: REJ03G1817-0100 Rev.2.00 Jun 21, 2012 500V - 35A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.14  typ. (at ID = 17.5 A, VGS = 10 V, Ta = 25C)

RJH60T4

Abstract: RJH60
Contextual Info: Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

RQA0004PXTL-E

Contextual Info: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0500 Rev.5.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A

DIODE marking code A34

Abstract: DIODE A34
Contextual Info: Preliminary Datasheet HITJ0201MP Silicon P Channel MOS FET Power Switching R07DS0473EJ0100 Rev.1.00 Jun 22, 2011 Features • Low on-resistance RDS on = 53 m typ (VGS = –4.5 V, ID = –1.8 A)  Low drive current  High speed switching  2.5 V gate drive

RJK5031DPD

Contextual Info: Preliminary Datasheet RJK5031DPD Silicon N Channel MOS FET High Speed Power Switching R07DS0417EJ0200 Rev.2.00 Feb 24, 2012 Features • Low on-state resistance RDS on = 2.4  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  High speed switching Outline

Contextual Info: Preliminary Datasheet RJL5014DPK R07DS0436EJ0200 Previous: REJ03G1798-0100 Rev.2.00 Jun 14, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.32  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)

marking A27

Contextual Info: Preliminary Datasheet HITJ0202MP Silicon P Channel MOS FET Power Switching R07DS0474EJ0100 Rev.1.00 Jun 22, 2011 Features • Low on-resistance RDS on = 83 m typ (VGS = –4.5 V, ID = –1.4 A)  Low drive current  High speed switching  2.5 V gate drive

Contextual Info: Preliminary Datasheet HITK0303MP 30V, 3.7A, 53mmax. Silicon N Channel MOS FET Power Switching R07DS0484EJ0200 Rev.2.00 May 09, 2013 Features • Low on-resistance RDS on = 42 m typ (VGS = 10 V, ID = 1.8 A)  Low drive current  High speed switching

Contextual Info: Preliminary Datasheet HITJ0303MP –30V, –3.3A, 68mmax. Silicon P Channel MOS FET Power Switching R07DS0478EJ0200 Rev.2.00 May 09, 2013 Features • Low on-resistance RDS on = 54 m typ (VGS = –10 V, ID = –1.6 A)  Low drive current  High speed switching

Contextual Info: Preliminary Datasheet HITK0202MP 20V, 3.8A, 55mmax. Silicon N Channel MOS FET Power Switching R07DS0480EJ0200 Rev.2.00 May 09, 2013 Features • Low on-resistance RDS on = 42 m typ (VGS = 4.5 V, ID = 1.9 A)  Low drive current  High speed switching

7B2 zener diode

Contextual Info: Preliminary Datasheet HZU Series R07DS0423EJ1000 Rev.10.00 Jun 06, 2011 Silicon Planar Zener Diode for Stabilizer Features • These diodes are delivered taped.  Ultra small Resin Package URP is suitable for surface mount design. Ordering Information

Contextual Info: Preliminary Datasheet 2SJ496 R07DS0433EJ0400 Previous: REJ03G0870-0300 Rev.4.00 Jun 07, 2011 Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices.

RJK5013DPE

Contextual Info: Preliminary Datasheet RJK5013DPE R07DS0487EJ0300 Previous: REJ03G1488-0200 Rev.3.00 Jun 29, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0. 385  typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C)  Low leakage current

RJH30H1

Abstract: RJH30 RJH30H1DPP-M0 PRSS0003AF-A RJh30H Silicon N Channel IGBT High Speed Power Switching
Contextual Info: Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Features •      Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.

Contextual Info: Preliminary Datasheet HIT667 R07DS0450EJ0400 Previous: REJ03G1505-0300 Rev.4.00 Jun 14, 2011 Silicon NPN Epitaxial Features • Low frequency power amplifier  Complementary pair with HIT647 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod)

Contextual Info: Preliminary Datasheet 2SC1213, 2SC1213A R07DS0431EJ0300 Previous: REJ03G0684-0200 Rev.3.00 Jun 07, 2011 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A

RJK2062JPK

Contextual Info: Preliminary Datasheet RJK2062JPK 200 V - 80 A - N Channel Power MOS FET High Speed Power Switching R07DS0488EJ0100 Rev.1.00 Sep 19, 2012 Features •    For Automotive applications AEC-Q101 compliant Low on-resistance : RDS on = 17 m typ. Low input capacitance : Ciss = 6800 pF typ

Contextual Info: Preliminary Datasheet RJK6012DPE R07DS0445EJ0300 Previous: REJ03G1481-0200 Rev.3.00 Jun 17, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current

17-33 0952

Abstract: RQA0009 RQA0009SXTL-E R07DS0493EJ0200
Contextual Info: Preliminary Datasheet RQA0009SXAQS R07DS0493EJ0200 Previous: REJ03G1566-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)

Contextual Info: Preliminary Datasheet HITK0204MP Silicon N Channel MOS FET Power Switching R07DS0482EJ0100 Rev.1.00 Jun 22, 2011 Features • Low on-resistance RDS on = 100 m typ (VGS = 4.5 V, ID = 1.2 A)  Low drive current  High speed switching  2.5 V gate drive

rjh60t4

Abstract: rjh60t
Contextual Info: Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package

AEC-Q100-002

Abstract: IL12 PD166020
Contextual Info: Preliminary Data Sheet PD166020T1F R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 MOS INTEGRATED CIRCUIT 1. Overview 1.1 Description The μPD166020T1F is a single N-channel high-side switch with charge pump, diagnostic feedback with load current sense and embedded protection functions.