R07DS0436EJ0200 Search Results
R07DS0436EJ0200 Datasheets Context Search
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Contextual Info: Preliminary Datasheet RJL5014DPK R07DS0436EJ0200 Previous: REJ03G1798-0100 Rev.2.00 Jun 14, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode Low on-resistance RDS(on) = 0.32 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C) |
Original |
RJL5014DPK R07DS0436EJ0200 REJ03G1798-0100) PRSS0004ZE-A | |
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Contextual Info: Preliminary Datasheet RJL5014DPK R07DS0436EJ0200 Previous: REJ03G1798-0100 Rev.2.00 Jun 14, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode Low on-resistance RDS(on) = 0.32 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C) |
Original |
RJL5014DPK R07DS0436EJ0200 REJ03G1798-0100) PRSS0004ZE-A |