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    RJL5014DPK Search Results

    RJL5014DPK Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    RJL5014DPK
    Renesas Technology MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : -; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1700; toff ( us) typ: -; Package: TO-3P Original PDF 71.78KB 4
    RJL5014DPK-00#T0
    Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 19A TO3P Original PDF 7
    SF Impression Pixel

    RJL5014DPK Price and Stock

    Renesas Electronics Corporation

    Renesas Electronics Corporation RJL5014DPK-00#T0

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    RJL5014DPK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Datasheet RJL5014DPK R07DS0436EJ0200 Previous: REJ03G1798-0100 Rev.2.00 Jun 14, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.32  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)


    Original
    rjl5014dpkr07ds0436ej0200rej03g1798-0100prss0004ze-a PDF

    PRSS0004ZE-A

    Abstract: RJL5014DPK RJL5014DPK-00-T0 SC-65
    Contextual Info: RJL5014DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1798-0100 Rev.1.00 Jun 30, 2009 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A


    Original
    rjl5014dpkrej03g1798-0100prss0004ze-arjl5014dpk-00-t0+1sc-65 PDF

    Contextual Info: Preliminary Datasheet RJL5014DPK R07DS0436EJ0200 Previous: REJ03G1798-0100 Rev.2.00 Jun 14, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.32  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)


    Original
    rjl5014dpkr07ds0436ej0200rej03g1798-0100prss0004ze-a PDF

    PRSS0004ZE-A

    Abstract: RJL5014DPK RJL5014DPK-00-T0 SC-65
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    prss0004ze-arjl5014dpkrjl5014dpk-00-t0sc-65 PDF

    R2J24020F

    Abstract: R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114
    Contextual Info: 2009.07 ルネサス 電源システム RENESAS Power supply system www.renesas.com 電気に変換されたエネルギーは無駄なく使うことで地球全体 の炭素使用量を減らし地球の温暖化を防ぐことができます。 電気は主に発電所で作られ、高電圧のACで送電されること


    Original
    rjj01f0008-0201r2j24020fr2a20117r2j240+7r2j24020hat1130rr2a2011410a triac control pwm battery chargerdimmer diagrams igbtr2a20104pfc pwm evaluation board r2a20114 PDF

    Hdd spindle motor

    Abstract: HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA
    Contextual Info: April 2010 Renesas Electronics Power MOSFETs for Small Motor Drive Features Low ON resistance Low voltage drive 4V Small package Built-in high-speed diode Merits Low loss, High efficiency Available direct drive from logic IC and reduction of the number of any parts


    Original
    o-220cfmh5n5004plh5n5005plrjl5012dpp+14o-220fnrjl5013dpprjl5014dpprjl5014dpkhdd spindle motorhat2256rhat3038hat3019rhat1132rhat2276rhat3037rpolygon mirrorpolygon mirror motorrqk0603dqa PDF