HITJ0202MP Search Results

marking A27

Contextual Info: Preliminary Datasheet HITJ0202MP Silicon P Channel MOS FET Power Switching R07DS0474EJ0100 Rev.1.00 Jun 22, 2011 Features • Low on-resistance RDS on = 83 m typ (VGS = –4.5 V, ID = –1.4 A)  Low drive current  High speed switching  2.5 V gate drive

FR4 GLASS EPOXY

Contextual Info: Preliminary Datasheet HITJ0202MP Silicon P Channel MOS FET Power Switching R07DS0474EJ0100 Rev.1.00 Jun 22, 2011 Features • Low on-resistance RDS on = 83 m typ (VGS = –4.5 V, ID = –1.4 A)  Low drive current  High speed switching  2.5 V gate drive

Contextual Info: Preliminary Datasheet HITJ0202MP –20V, –2.7A, 105mmax. Silicon P Channel MOS FET Power Switching R07DS0474EJ0200 Rev.2.00 May 09, 2013 Features • Low on-resistance RDS on = 83 m typ (VGS = –4.5 V, ID = –1.4 A)  Low drive current  High speed switching