R07DS0445EJ0300 Search Results
R07DS0445EJ0300 Datasheets Context Search
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Contextual Info: Preliminary Datasheet RJK6012DPE R07DS0445EJ0300 Previous: REJ03G1481-0200 Rev.3.00 Jun 17, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C) Low leakage current |
Original |
RJK6012DPE R07DS0445EJ0300 REJ03G1481-0200) PRSS0004AE-B | |
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Contextual Info: Preliminary Datasheet RJK6012DPE R07DS0445EJ0300 Previous: REJ03G1481-0200 Rev.3.00 Jun 17, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C) Low leakage current |
Original |
RJK6012DPE R07DS0445EJ0300 REJ03G1481-0200) PRSS0004AE-B |