RJL5018DPK Search Results
RJL5018DPK Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| RJL5018DPK-00#T0 | Renesas Electronics | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 35A TO3P | Original | 7 |
RJL5018DPK Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Preliminary Datasheet RJL5018DPK R07DS0498EJ0200 Previous: REJ03G1817-0100 Rev.2.00 Jun 21, 2012 500V - 35A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode Low on-resistance RDS(on) = 0.14 typ. (at ID = 17.5 A, VGS = 10 V, Ta = 25C) |
Original |
rjl5018dpkr07ds0498ej0200rej03g1817-0100prss0004ze-a | |
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Contextual Info: RJL5018DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1817-0100 Rev.1.00 Sep 11, 2009 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A |
Original |
rjl5018dpkrej03g1817-0100prss0004ze-a | |
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Contextual Info: Preliminary Datasheet RJL5018DPK R07DS0498EJ0200 Previous: REJ03G1817-0100 Rev.2.00 Jun 21, 2012 500V - 35A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode Low on-resistance RDS(on) = 0.14 typ. (at ID = 17.5 A, VGS = 10 V, Ta = 25C) |
Original |
rjl5018dpkr07ds0498ej0200rej03g1817-0100prss0004ze-a | |
PRSS0004ZE-A
Abstract: RJL5018DPK-00-T0 SC-65
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Original |
prss0004ze-arjl5018dpk-00-t0sc-65 |