HITK0202MP Search Results

Contextual Info: Preliminary Datasheet HITK0202MP 20V, 3.8A, 55mmax. Silicon N Channel MOS FET Power Switching R07DS0480EJ0200 Rev.2.00 May 09, 2013 Features • Low on-resistance RDS on = 42 m typ (VGS = 4.5 V, ID = 1.9 A)  Low drive current  High speed switching

Contextual Info: Preliminary Datasheet HITK0202MP Silicon N Channel MOS FET Power Switching R07DS0480EJ0100 Rev.1.00 Jun 22, 2011 Features • Low on-resistance RDS on = 42 m typ (VGS = 4.5 V, ID = 1.9 A)  Low drive current  High speed switching  2.5 V gate drive

Contextual Info: Preliminary Datasheet HITK0202MP Silicon N Channel MOS FET Power Switching R07DS0480EJ0100 Rev.1.00 Jun 22, 2011 Features • Low on-resistance RDS on = 42 m typ (VGS = 4.5 V, ID = 1.9 A)  Low drive current  High speed switching  2.5 V gate drive