PMD16K60 Search Results

PMD16K100

Abstract: PMD16K80 PMD16K60 PMD-16K-100 MIL-STD 833 test method 3015
Contextual Info: Inchange Semiconductor Product Specification PMD16K60/80/100 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・DARLINGTON APPLICATIONS ・Designed for use in power switching application. PINNING See Fig.2 PIN DESCRIPTION

Contextual Info: ^Eini-Conductoi ^Products., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Darlingtion Power Transistor PMD16K60 DESCRIPTION • High DC current gain • Collector-Emitter Sustaining VoltageVcEO<sus)= 60V(Min)

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

pmd10K80

Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

MC7812Ck

Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

2N5875

Abstract: BDX85C LM3661TL-1.40 BU208 2N5886 BDW52B
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

lambda pmd16k100

Abstract: PMD17K100 PMD17K80 PMD16K100 PMD16K PMD16K80 PMD17K PMD17K60 PMD-17K-100
Contextual Info: Data Sheet Central" PMD16K SERIES PMD17K SERIES NPN PNP SILICON POWER DARLINGTON TRANSISTORS Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors

pmd12k-40

Abstract: 2n6543 bu208 2n3713 LM3661TL-1.40
Contextual Info: Power Transistors Ir " -— y i TO-3 Case TYPE NO. •c PD @ lc hpE BVc b O BVc e o v c e s a t) *c *TYP (A) NPN 2N3055 PNP MJ2955 2N3442 m MAX *T ‘ TYP (V) (V) MIN MIN MIN MAX (A) (V) (A) MAX (MHZ) MIN 15 115 100 60 5.0 — 10 3.0 10 2.5 10 117 160

17K60

Abstract: 300 W npn darlington power transistors PMD17K pmd16k100 17K80
Contextual Info: PMD16K SERIES PMD17K SERIES NPN PNP w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR PMD16K, PMD17K series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process,

Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. 'c Pd bvCBO BVceo @ hpE lc v CE(SAT) @|c *TYP ‘TYP (A) NPN PNP BUY69C (W) MAX 00 (V) MIN MIN (A) (V) (A) MAX (MHZ) MIN MAX MIN 2.5 3.3 8.0 10* 10 100 500 200 15 . 30 200 100 90 25 100 7.5 0.8 7.5 2.0 60

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

PMD10K100

Abstract: PMD12K40 MJ802 MJ4502 MJ11016 MJ802-MJ4502 MJ10012 PMD12K100 PMD13K100 PMD16K100 PMD11K60
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP BUY69C IC PD (A) MAX (W) BVCBO BVCEO (V) MIN (V) MIN *TYP hFE @ IC VCE(SAT) @ IC (A) MIN MAX (V) MAX (A) fT *TYP (MHz) MIN 10 100 500 200 15 - 2.5 3.3 8.0 10* MJ802 MJ4502 30 200 100 90 25 100 7.5 0.8

MJ6503

Abstract: PMD10K100 MJ1000 MJ4502 EQUIVALENT PMD16K100 PMD1703K PMD17K100 MJ10012 MJ802 PMD10K40
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. NPN IC PNP BUY69C (A) MAX PD BVCBO BVCEO *BVCEV (W) (V) (V) MIN MIN hFE @ IC VCE(SAT) @ IC (A) MIN MAX (V) MAX (A) fT *TYP (MHz) MIN 10 100 500 200 15 - 2.5 3.3 8.0 10* MJ802 MJ4502 30 200 100 90 25 100 7.5

MJ11016

Abstract: PMD10K40 PMD1703K PMD18K100 pm010k60 pmd16k100
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. 'c Pd BVc b o @ lc bvceo (A) NPN PNP BUY69C (W ) MAX 10 00 (V) MIN MIN *TYP (A) MIN (V) MAX (MHZ) (A) MAX 100 500 200 15 2.5 3.3 MJ802 MJ4502 30 200 100 90 25 100 7.5 MJ1000 M J 900 8.0 90 60 60 1,000 . 3.0

LM3661TL-1.40

Abstract: 2N6057
Contextual Info: Power Transistors TO-3 Case TYPE NO. <c pD BVc b o B V c io @ lc VCE SAT @ <c *TYP NPN 2N3055 PNP MJ2955 2N3442 (A) MAX m *T TYP m (V) MIN MIN MIN MAX (A) (V) (A) MAX (MHZ) MIN 15 115 100 60 5.0 . 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . 2N3713

LM3661TL-1.40

Abstract: BUW36 2N6253 2n6545
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

THINKI transistor catalog

Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

B0411

Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864