PMD18K100 Search Results

pmd18k100

Abstract: TO3 package NPN transistor collector base and emitter 100V 10-9The
Contextual Info: SEME PMD18K100 LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. FEATURES 2. 5 20.3 max. E 30.1 1 .0 B • • • • TO3 PACKAGE 100V 60A PEAK 240 WATTS 16.9 39.5 max. 4.2 DESCRIPTION 10.9 The PMD18K100 is an NPN Darlington

Contextual Info: S EM E PMD18K100 LA B NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. FEATURES 2. 5 20.3 max. E 30.1 1 .0 B • • • • TO3 PACKAGE 100V 60A PEAK 240 WATTS 16.9 39.5 max. 4.2 DESCRIPTION 10.9 The PMD18K100 is an NPN Darlington

pmd10K80

Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2N5875

Abstract: BDX85C LM3661TL-1.40 BU208 2N5886 BDW52B
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

pmd12k-40

Abstract: 2n6543 bu208 2n3713 LM3661TL-1.40
Contextual Info: Power Transistors Ir " -— y i TO-3 Case TYPE NO. •c PD @ lc hpE BVc b O BVc e o v c e s a t) *c *TYP (A) NPN 2N3055 PNP MJ2955 2N3442 m MAX *T ‘ TYP (V) (V) MIN MIN MIN MAX (A) (V) (A) MAX (MHZ) MIN 15 115 100 60 5.0 — 10 3.0 10 2.5 10 117 160

Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. 'c Pd bvCBO BVceo @ hpE lc v CE(SAT) @|c *TYP ‘TYP (A) NPN PNP BUY69C (W) MAX 00 (V) MIN MIN (A) (V) (A) MAX (MHZ) MIN MAX MIN 2.5 3.3 8.0 10* 10 100 500 200 15 . 30 200 100 90 25 100 7.5 0.8 7.5 2.0 60

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

PMD10K100

Abstract: PMD12K40 MJ802 MJ4502 MJ11016 MJ802-MJ4502 MJ10012 PMD12K100 PMD13K100 PMD16K100 PMD11K60
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. NPN PNP BUY69C IC PD (A) MAX (W) BVCBO BVCEO (V) MIN (V) MIN *TYP hFE @ IC VCE(SAT) @ IC (A) MIN MAX (V) MAX (A) fT *TYP (MHz) MIN 10 100 500 200 15 - 2.5 3.3 8.0 10* MJ802 MJ4502 30 200 100 90 25 100 7.5 0.8

J901

Abstract: PMD1602K PMD16K100 PMD12K60
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. •e PD bvc b o hpE V cS O @ ic VCE(SAT) @*c TYP (A) NPN PN P BUY69C (W) MAX *TYP (V) (V) MIN UH M m in MIN MAX 2.5 3.3 8.0 10* (A) (V) (A) MAX (MHZ) MIN 10 100 500 200 15 . MJ802 MJ4502 30 200 100 90 25

BTA08-600C equivalent

Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Contextual Info: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B

PMD18K100

Abstract: PMD-19K-100 IC-90A
Contextual Info: PMD18K SERIES PMD19K SERIES NPN PNP w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR PMD18K, PMD19K series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base

Contextual Info: S E MTECH CORP 013^13^ 0003E74 SIB 5flE D 240 WATT 30 AMP CONTINUOUS, 60 AM P PEAK SET PMD 18K, 19K ABSOLUTE MAXIMUM RATINGS PARAM ETER FEATURES SYM BO L Collector Emitter Voltage PM D18K, 19K80 PMD18K, 19K100 VcE o Collector Base Voltage PM D18K, 19K80

MJ11016

Abstract: PMD10K40 PMD1703K PMD18K100 pm010k60 pmd16k100
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. 'c Pd BVc b o @ lc bvceo (A) NPN PNP BUY69C (W ) MAX 10 00 (V) MIN MIN *TYP (A) MIN (V) MAX (MHZ) (A) MAX 100 500 200 15 2.5 3.3 MJ802 MJ4502 30 200 100 90 25 100 7.5 MJ1000 M J 900 8.0 90 60 60 1,000 . 3.0

LM3661TL-1.40

Abstract: 2N6057
Contextual Info: Power Transistors TO-3 Case TYPE NO. <c pD BVc b o B V c io @ lc VCE SAT @ <c *TYP NPN 2N3055 PNP MJ2955 2N3442 (A) MAX m *T TYP m (V) MIN MIN MIN MAX (A) (V) (A) MAX (MHZ) MIN 15 115 100 60 5.0 . 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . 2N3713

LM3661TL-1.40

Abstract: BUW36 2N6253 2n6545
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

ESM2040DV

Abstract: ESM2 ESM2040D ke92 PTC6072 KE924503 m*11014 2SD644 SD6062 esm749a
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD Max (W) hFE Min »T Max (Hz) ICBO Max (A) tr Max (8) r (CE)ut Max (Ohms) T Op«r Package Style Max (°C) Darlington Transistors, NPN (Cont'd) 5 10 15 20 25 30 35 40 45 50

PMD18K60

Abstract: PMD18K80 PMD18K PMD19K100 pmd19k80 PMD18K100 PMD19K PMD19K60 PMD-18K-80 PMD-18K-100
Contextual Info: Data Sheet PMD18K SERIES PMD19K SERIES Central' NPN PNP SILICON POWER DARLINGTON TRANSISTORS Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of World Class Discrete Semiconductors

TYN 208 equivalent

Abstract: bt 824 600b FR207 equivalent BRX49 equivalent MZ2361 equivalent BTA08-600C equivalent n4468 CS2181 TYN 276 BTA16-600B equivalent
Contextual Info: Index/Cross R e fe re n ce Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page Industry Part Number Central Part Number Code Page 1N 34A 118 1N2977B 128 1N3320B 128 1N 60 118 1N2978B 128 1N3321B 128 1N 67 A

BRX49 equivalent

Abstract: FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208
Contextual Info: Index/Cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 Central Part Number Page Industry Part Number 1N968B 122 1N2838B 118 IN 969B 122 1N2839B 129 1N 67 A 118 1N970B 122 1N2840B 129 Code Code Central Part Number