transistor cq 529
Abstract: BLV94 sot-171 transistor zx series
Contextual Info: PHILIPS IN T E RN AT ION AL bSE D m 711GÛ5b 0Db3052 Jl 3T1 • PHIN BLV94 UHF P O W ER T R A N SIST O R NPN silicon planar epitaxial transistor prim arily intended fo r common base, class-B operation in mobile radio transmitters fo r the 900 MHz comm unication band.
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blv94711dfieb00b3dbtransistor cq 529+2sot-171transistor zx series
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RXB12350Y
Contextual Info: ^ M AINTENANC E TYPE 5bE D PHILIPS INTERNATIONAL 3 3 -/3 RXB12350Y TllQflEb DDMbSMb 575 PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.
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rxb12350y0dmb54bfo-91t-33-13 |
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P112
Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
Contextual Info: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are
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tip110tip111711002bt-33-z+6t0-220abtip115tip116tip112p112darlington npn tip 102
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bgjg
Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
Contextual Info: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control
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-0ciblf5420d43ts4ot171pinning-sot171+12mba931mra971bgjgtransistor tphilips 2322 733blf542ufu3703a0c2222 030 capacitor philipsphilips potentiometer43t transistor3909
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BUK542
Abstract: BUK542-100A BUK542-100B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL
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711qssbbuk542-100a/b-sot186buk542+4-100a-100bbuk542-100abuk542-100b
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BT153
Abstract: TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062
Contextual Info: PHILIPS INTERNATIONAL SflE J> 7110fl2t, 0053035 301 • PHIN B l iby _y F A S T TURN-OFF TH YR IS TO R Glass-passivated fast-turn-off thyristor in a T 0 -2 2 0 A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable for use in regulator,
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7110fl2tt0-220abbt153tag thyristor+6thyristor tagthyristor tag 13bt153 fast turn offphilips thyristor 239thyristor trigger pulse transformer7z82062
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as6 diode
Abstract: BYX96-300 diode as6 BYX96 BYX96-300R BYX96-300U
Contextual Info: BYX96 SERIES PHILIPS INTERNATIONAL SbE D • 7110ÔEb OD41bSS 1T3 ■ PHIN T ~ 0 - n RECTIFIER DIODES A ls o availab le to B S 9 3 3 1 - F 1 2 9 S ilic o n re ctifie r dio d es in m etal envelopes sim ila r to D O -4 , intended fo r use in p o w er rectifier
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byx96bs9331-f129byx96-300byx96-300r+61600ri-oi-197110fl2bas6 diodediode as6byx96-300u
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BD201F
Abstract: BDX77F BD203F BD202F BD204F BDX78F
Contextual Info: J PHILIPS INTERNATIONAL SbE D • BD201F; BD203F; BDX77F 7110a2b 0Gl+2ÛDfi Ô4S ■ PHIN T - 3 3 ' O cf SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .
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bd201fbd203fbdx77f7110a2b+5t-33-0ot186bd202fbd204fbdx78f
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SOT123 Package
Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability
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blf244711002bot1237110fi5b+5t-39-11sot123 packagesot123international power sourcessot-123
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fet MARKING MHp
Abstract: sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
Contextual Info: BF996S PHILIPS INTERNATIONAL 5 bE D 711002b D 0 3 l+D7û ÖTß • PHIN F O R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE OF H A N D B O O K SC07 O R D A T A S H E E T T - 35-27 SILICON N-CHANNEL DUAL GATE MOS-FET D e pletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and
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bf996sot143fet marking mhpsot143 code marking ms+3fet marking codemarking ansmarking l1 fet
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hFE-200 to-92 npn
Abstract: 2N4123 2N4124 2N4125 2N4126
Contextual Info: 2N4123 _ 9N4194_ PHILIPS INTERNATIONAL SbE D • 711002b D042bb2 T3T ■ PHIN -= I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in pla stic T O -9 2 envelopes, p rim a rily intended fo r low -pow er, sm all-signal a u d io fre qu e n cy a p p lica tio n s fo r consum er service.
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2n4123711dfl2td042bb22n4125+42n41262n4124100juahfe-200 to-92 npn
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4E7 philips
Abstract: KY 711 VN2406L FL 210 transistor
Contextual Info: • Philips 711002b DDbflOSS T4S ■ PHIN Sem iconductors Data sheet status Product specification date of issue July 1993 FEATURES VN2406L N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION PINNING - TO -92 variant • Very low RDs 0n
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711002bvn2406lmbb073711dfl5h+5d0bfl057mc93574e7 philipsky 711fl 210 transistor
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BUK543
Abstract: BUK543-60A BUK543-60B TTA10
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack
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buk543-60a/b-sot186buk543ds10n+3buk543-60abuk543-60btta10
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bd947
Abstract: b0945 BD945 m lc 945 BD943 BD944
Contextual Info: BD943 BD945 BD947 H ILIPS INTERNATIONAL _ SbE J> H 711002b 0043070 SOfl • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.
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bd943bd945bd9477110fllt+5043070tbd944t-33-17b0945m lc 945
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DECT base station schematic
Abstract: PEC 738 speech scrambler pec 730 PCD5032 dect scrambler philips dect PCD5040 PCD5041 DECT mac
Contextual Info: PHILIPS INTERNAT ION AL b?E D • 7110aEb OObSlflS STO ■ Philips Semiconductors RF Communications Product* PHIN Objective specification DECT burst mode controller PCD5040 mnnsssRBBEE The PCD5040 DECT Burst Mode Controller BMC is a custom 1C that performs the DECT Physical Layer and
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pcd5040dect base station schematicpec 738speech scrambler+6pec 730pcd5032dect scramblerphilips dectpcd5041dect mac
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SL 100 NPN Transistor
Abstract: blt91 International Power Sources ferroxcube wideband hf choke Philips 4312 020 TRANSISTOR SL 100 of transistor sl 100 sl 100 transistor
Contextual Info: PHILIPS INTERNATIONAL bSE D B 7110fl5Li DOLEb71 0 4^1 • PHIN BLT91/SL _ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in handheld radio stations in the 900 MHz communications band.
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00l2b71blt91/slot-172d7110fl2b+9d0bsb77sl 100 npn transistorblt91international power sourcesferroxcube wideband hf chokephilips 4312 020transistor sl 100of transistor sl 100sl 100 transistor
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BFQ108
Abstract: BFQ10 SOT122A 45005B
Contextual Info: Philips Sem iconductors Product specification - PNP 4 GHz wideband transistor pHILIPS INTERNATIONAL DESCRIPTION 5bE ]> 3 3 -/7 BFQ108 711GÖEb DD4S5S3 fllfl • PHIN PINNING The BFQ108 is a high output voltage PNP transistor in a SOT122A envelope, primarily Intended for use
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bfq108711gfl2bot122a45005b+2bfq10sot122a
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KTY87-205
Abstract: philips kty87 KTY87 R40 AH D 2578 HO-22 Silicon temperature sensors
Contextual Info: KTY87-205 PHILIPS INTERNATIONAL SbE D • ?110fl2b □D47D7I1 3T4 ■ PHIN SILICON TEMPERATURE SENSORS The K T Y 8 7 are high precision te m p e ra tu re sensors w ith a positive te m p e ra tu re c o e ffic ie n t o f resistance fo r tem perature measuring and te m perature c o n tro l. In th e te m perature range 10 ° C to 110 ° C th e
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kty87-20547d7tkty87sqd103+6ddh7d63philips kty87r40 ahd 2578ho-22silicon temperature sensors
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LTN211
Abstract: LXL211-G
Contextual Info: PHILIPS INTERNATIONAL Philips Components Datasheet status Product specification date of issue July 1990 711DÖ2b DGSTlbM 752 bOE D LXL211-G PHIN rW /-?° Electro-luminescent backlight panel QUICK REFERENCE DATA DEVICE DESCRIPTION 1 3 .3 x 6 3 .5 mm Lit area dim ensions
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711dfl2blxl211-gltn2117z2293s+2100vrms60smax
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BSS38
Abstract: IEC134
Contextual Info: BSS38 PH IL I P S INTERNATIONAL SbE » 7 1 1 0 Ô 2 L 00 42330 T7fl • PHIN — SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope. It is primarily intended for general purpose switching and as driver for numerical indicator tubes.
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bss38iec134 |
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BFQ32S
Abstract: BFR96S GHz PNP transistor SAA 1020 Philips DLM
Contextual Info: Philips Sem iconductors Product specification PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION ^ SbE D BFQ32S m 711002b 0G4S433 DMT • PHIN PINNING PNP transistor in a plastic SOT37 envelope. It is intended for use in UHF applications such as broadcast
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bfq32s7110fl2bbfr96sghz pnp transistor+2saa 1020philips dlm
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IL 741
Abstract: philips lps 100 BUK441 BUK441-100A BUK441-100B P101
Contextual Info: PHILIPS INTERNATIONAL L.5E D H 711Dfl5t> 0QL.3T-H 741 • PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In
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711dfl5tbuk441-100a/bbuk441-100a+7-100b-sot186il 741philips lps 100buk441-100abuk441-100bp101
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IC 651
Abstract: BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651
Contextual Info: 5bE D PHILIPS INTERNATIONAL Philips Components B D S 643/645/647/649/651 Data sheet status Product specification date o f issue April 1991 m 7110ÛEb DQ4314b 17T • PHIN r-33-z^j NPN Silicon Darlington power transistors DESCRIPTION PINNING -SOT223 DESCRIPTION
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dd4314bbds643/645/647/649/651r-33-zot223+10bds644/646/648/650/652-sot223bds643bds645bds647bds649ic 651bd8643darlington npn silicon diodebds651
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TRANSISTOR BO 344
Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110flsbbuk455-100a/bt0220abbuk455+8-100a-100btransistor bo 344transistor bo 341tny 175buk455-100abuk455-100bdata transistor 1650
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