SOT122A Search Results

BFQ108

Abstract: BFQ10 SOT122A 45005B
Contextual Info: Philips Sem iconductors Product specification - PNP 4 GHz wideband transistor pHILIPS INTERNATIONAL DESCRIPTION 5bE ]> 3 3 -/7 BFQ108 711GÖEb DD4S5S3 fllfl • PHIN PINNING The BFQ108 is a high output voltage PNP transistor in a SOT122A envelope, primarily Intended for use

Contextual Info: Philips S em iconductors bhS3T31 0031b53 437 M l APX Product specification NPN 4 GHz wideband transistor BFQ68 N AMER PHILIPS/DISCRETE bTE » PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud.

Contextual Info: Philips Semiconductors tb53^31 0031b73 3=n APX Product specification NPN 4 GHz wideband transistor — — BFQ136 N AUER PHILIPS/DISCRETE b^E ]> PINNING DESCRIPTION NPN transistor in a four-lead dual-emitter SOT122A envelope with a ceramic cap. Ail leads are isolated

RF Wideband Transistors

Contextual Info: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LEE1015T FEATURES PINNING - SOT122A • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency

bfq68 scattering

Abstract: BFQ68 d 1556 transistor ha 1452 Amplifiers IEC134 1685 transistor
Contextual Info: b b 5 3 ^ 3 1 P h ilip s S e m ic o n d u c to rs 0 Q 3 ]ib 5 3 437 M l AP X P ro d u c t s p e c ific a tio n NPN 4 GHz wideband transistor •— BFQ68 N A ME R P H IL IP S /D IS C R E T E b *1 E I> PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A

SOT122A

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studded ceramic package; 4 leads SOT122A D A Q c w1 M A M D1 D2 N A M X M1 W N3 H detail X b 4 3 H 1 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT

Contextual Info: PACKAGE OUTLINES Page SOTIOO 348 SOT122A 349 SOT422A 350 SOT423A 351 SOT437A 352 SOT439A 353 SOT440A 354 SOT441A 355 SOT442A 356 SOT443A 357 SOT445A 358 SOT445B 359 SOT446A 360 SOT447A 361 SOT448A 362 SOT469A 363 Philips Semiconductors Microwave transistors

RF Wideband Transistors

Abstract: MS-012AA
Contextual Info: PACKAGE OUTLINES Package SOT23 SOT54 SOT89 SOT96-1 SOT122A SOT122D SOT122E SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 SOT551A Surface-mount yes no yes yes no no no yes yes no no yes yes yes yes yes yes yes Page . .

BFQ108

Contextual Info: ^ 5 3 ^ 3 1 D031bb4 512 M APX Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFQ108 fc,*ÌE D N AMER PHILIPS/DISCRETE PINNING DESCRIPTION PIN The BFQ108 is a high output voltage PNP transistor in a SOT122A envelope, primarily intended for use

AgCu28

Contextual Info: CHAPTER 7 ENVIRONMENTAL INFORMATION page Introduction 7-2 Explanation of the tables 7-2 General safety remarks 7-5 Substances not used by Philips Semiconductors 7-6 Disposal and recycling 7-7 General warnings 7-7 Chemical content tables: Diodes Transistors

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Contextual Info: N AUER PHILIPS/DISCRETE L IE b b s a ' m 0 0 2 ^ 7 4 ssi « BLY87C/01 D apx Jl V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage o f 13,5 V. The transistor is resistance stabilized and is guaranteed to

BLW91

Contextual Info: , Unc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BLW91 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the

BLW79

Contextual Info: , Una. 'JEIISU TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BLW79 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the

BLW81

Contextual Info: -^dnauator Lpioauoti, Unc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the

865 RF transistor

Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm

TRANSISTOR SMD MARKING CODE NM

Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Contextual Info: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is

ITT 2222 npn

Abstract: ITT 2222 A itt 2222 blu99 transistor SL 100 NPN Transistor "2222 352" 4312 020 36642 BLU99 ferroxcube wideband hf choke SOT122A
Contextual Info: N AMER P H I L I P S / D I S C R E T E blE D • bbâB^Bl DDEfifiRQ btH ■ IAPX Jl BLU 99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.

BY206

Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in

BLW80

Abstract: transistor rf m 1104
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW80 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the

transistor D 2578

Abstract: BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting

ceramic capacitor 470 pf

Abstract: philips carbon film resistor philips transistor sot122 MCB117
Contextual Info: • T llQ Ö S h UHF power transistor FEATURES • Internal input matching, to achieve wide bandwidth • Ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability. DDbETO b ‘H ö philips « P H IN BLU15/12

BLY88C

Contextual Info: ^53*131 0 0 2 = ^ 2 SO? • APX BLY88U/01 b'lE » N AMER PHILIPS/DISCRETE J V V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is