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    Integrated Silicon Solution Inc

    Integrated Silicon Solution Inc IS43DR86400B3DBLI

    512MBIT (X8) DDR2 SDRAM DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60
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    ComSIT USA IS43DR86400B3DBLI 7
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    00B3DB Datasheets Context Search

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    transistor cq 529

    Abstract: BLV94 sot-171 transistor zx series
    Contextual Info: PHILIPS IN T E RN AT ION AL bSE D m 711GÛ5b 0Db3052 Jl 3T1 • PHIN BLV94 UHF P O W ER T R A N SIST O R NPN silicon planar epitaxial transistor prim arily intended fo r common base, class-B operation in mobile radio transmitters fo r the 900 MHz comm unication band.


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    blv94711dfieb00b3dbtransistor cq 529+2sot-171transistor zx series PDF

    UPD70325-10

    Abstract: xi B42 uPD70325 KR-160 IPT640
    Contextual Info: 3. 3.1 ELECTRICAL SPECIFICATIONS FOR UPD70325-8, 70325-10 Absolute Maximum Ratings Ta = 25°C Parameter Symbol Te s t c o n d itions Rating Unit V DD -0.5 to +7.0 V V TH -0.5 to V d d +0.5 V Input v o l t a g e VI - 0.5 to V d d +0.5 V Output voltage V0


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    upd70325-8ud70325-10a19-a0b4s752s+1100b3100b42752s94-pins94gj-80-5bg-200b310284-pinupd70325-10xi b42upd70325kr-160ipt640 PDF

    Contextual Info: SIEMENS ‘P-Hall-Effect 1C; PSI: Protected-Precision-Siemens-Hall-IC TLE 4904; TLE 4934; TLE 4944 Highly Accurate, Protected Hall-Effect 1C Bipolar-IC Preliminary Data Features • • • • • • • • • • Active Piezo compensation Digital output signal


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    q67006-a9011q67006-a9027q67006-a9028623sbd5+400b3dbaes01237fl23sb050dh307 PDF