68W SOT
Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
Contextual Info: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua
|
Original
|
b132-h7456-gi-x-760068w sotultra low noise 12ghz64w sot23+7aus sot363bas 40-04 infineonbas 68-04bat 43 - 46 - 85 - 8661 siemensdiode bat 19sot143 dual diode
|
PDF
|
S4 78a DIODE schottky
Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
|
Original
|
25-rf-bipolar-transistors45-rf-bipolar-transistorsot-23ot-143+10s4 78a diode schottkydiode s6 78abc 148 transistor datasheettransistors bc 543transistor bc 158bc 158 is npn or pnp68w npntransistor bcs6 78abaw 92
|
PDF
|
2907A PNP bipolar transistors
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
|
Original
|
o-92d2907a pnp bipolar transistorsbc 148 transistor datasheettransistor bc 450 pnp+7diode s6 78atransistors bf 517bfg sot89bc 327 sot 23bas20 sot23diode ta 70/04bcp 846
|
PDF
|
2907A PNP bipolar transistors
Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
|
Original
|
ot-23ot-1432907a pnp bipolar transistorsdiode s6 78a+8mmic sot 363s1140diode ta 70/042907a pnp bipolar transistors datasheetdiode baw 62transistor bc 158baw 9268w sot
|
PDF
|
C4 Package
Abstract: VPS05604 diode array MARKING A3
Contextual Info: BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 C1/A2 C3 A4 6 5 4 D2 D1 3 1 VPS05604 D4 D3 1 2 3 A1 C2 A3/C4 EHA07464 ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
Original
|
70-04svps05604eha07464ot-363+3oct-07-1999c4 packagediode array marking a3
|
PDF
|
Q62702-A3468
Abstract: VPS05604
Contextual Info: BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection 6 • Voltage clamping • High-level detecting and mixing 2 1 3 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
Original
|
70-04svps05604q62702-a3468ot-363+1sep-07-1998
|
PDF
|
MARKING 74s
Abstract: PF 7004S
Contextual Info: SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection • Voltage clamping • High-level detecting and mixing n y W C 1/A 2 C2 R n fi è 3 2 A1 1 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
OCR Scan
|
70-04svps05604q62702-a3468ot-363+2marking 74spf 7004s
|
PDF
|
|
Contextual Info: SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 6 > • Circuit protection ^ • Voltage clamping • High-level detecting and mixing 3 C 1/A 2 2 C2 6 1 FI hi VPS05604 Di2 2Ï 1 z ^ 5 Dn\ hi d CI1/A2 EH A07287
|
OCR Scan
|
70-04svps05604a07287q62702-a3468+2ot-363ehb00045
|
PDF
|
PEF 24628
Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by
|
Original
|
b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819
|
PDF
|
BCM 4336
Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06
|
Original
|
b192-h6780-g9-x-7600d-81669vdsl5100i-evdsl6100i-e+10bcm 43362a0565c23352a280zc1740 bipolar transistortransistor a1267a1273 transistorc2335 r2b05652b265
|
PDF
|