NSP10 Search Results

NSP101M

Abstract: 260OC 3D6AT
Contextual Info: Surface Mount Specialty Polymer Solid Aluminum Electrolytic Capacitors NSP Series FEATURES • NEW “X”, “Y”, "Z" & "U" TYPE HIGH RIPPLE CURRENT/VERY LOW ESR • LOW PROFILE 1.1MM HEIGHT , RESIN PACKAGE • REPLACES MULTIPLE TANTALUM CHIPS IN HIGH

transistors marking d4z

Abstract: NSP101M2D2TRF NSP101M2D2XTRF NSP121M2D2TRF NSP121M2D2XTRF NSP121M2D2ZTRF NSP151M2D2TRF NSP151M2D2ZTRF NSP680M2D5TRF NSP150M8D2ATRF
Contextual Info: Surface Mount Specialty Polymer Solid Aluminum Electrolytic Capacitors NSP Series FEATURES • NEW “X”, “Y” & "Z" TYPE HIGH RIPPLE CURRENT/VERY LOW ESR RoHS • LOW PROFILE 1.1MM HEIGHT , RESIN PACKAGE Compliant • REPLACES MULTIPLE TANTALUM CHIPS IN HIGH

Contextual Info: Surface Mount Specialty Polymer Solid Aluminum Electrolytic Capacitors NSP Series FEATURES • VERY LOW IMPEDANCE AND HIGH RIPPLE AT 100KHZ • FLAT TOP RESIN PACKAGE • REPLACES MULTIPLE TANTALUM CHIPS IN HIGH CURRENT .POWER SUPPLIES AND VOLTAGE REGULATOR APPLICATIONS

NSP221M4D6ZATRF

Abstract: NSP101M2D2TRF NSP101M2D2XTRF NSP121M2D2TRF NSP121M2D2XTRF NSP121M2D2ZTRF NSP151M2D2TRF NSP151M2D2ZTRF NSP680M2D5TRF NSP331M2D6UATRF
Contextual Info: Surface Mount Specialty Polymer Solid Aluminum Electrolytic Capacitors NSP Series FEATURES • NEW “X”, “Y”, "Z" & "U" TYPE HIGH RIPPLE CURRENT/VERY LOW ESR • LOW PROFILE 1.1MM HEIGHT , RESIN PACKAGE • REPLACES MULTIPLE TANTALUM CHIPS IN HIGH

Contextual Info: Surface Mount Specialty Polymer Solid Aluminum Electrolytic Capacitors NSP Series FEATURES • NEW “X”, “Y”, "Z", "U" & "V" TYPE HIGH RIPPLE CURRENT/VERY LOW ESR • REPLACES MULTIPLE TANTALUM CHIPS IN HIGH *EXPANDED* CURRENT POWER SUPPLIES AND VOLTAGE REGULATORS

tl741

Abstract: VEL-4P32-RH-TP sodium vapor lamp Magnetek ballast F32T8 transistor ballast 1000W VEL-3P32-RH-TP 13w cfl circuit D835 transistor PHILIPS T8 MAGNETIC BALLAST
Contextual Info: Manufacturers’ Cross Reference Guide These tables are intended only as guides and may represent another lamp/ballast company's most similar product rather than an identical match. Individual manufacturer's performance values should be consulted. For a complete cross reference guide please consult our electronic

Contextual Info: NSP Series — Ceramic Housed - Consumer Grade Features • Flameproof construction • Temperature coefficient of resistance of ±200ppm/°C • Low resistance values • Power derating is linear from 100% at 25°C to zero at 250°C • Also available with standoffs

k 4202

Contextual Info: Surface Mount Specialty Polymer Solid Aluminum Electrolytic Capacitors FEATURES NSP Series RoHS Compliant • NEW “X”, “Y” & "Z" TYPE HIGH RIPPLE CURRENT/VERY LOW ESR • LOW PROFILE 1.1MM HEIGHT , RESIN PACKAGE • REPLACES MULTIPLE TANTALUM CHIPS IN HIGH

LN 9499 03 075

Abstract: AFS4 LN 9499 miteq c-22 AFS2 Miteq
Contextual Info: Back to Amplifier Home Page AFS/JS AMPLIFIERS Table Of Contents Introduction Amplifier Models • Amplifiers By Frequency • Amplifiers By Category • Specialized Amplifiers • Typical JS Series Amplifier Performance Outline Drawings Amplifier Accessories

NSP471M2D6ATRF

Abstract: transistors marking d4z NSP101M2D2TRF NSP101M2D2XTRF NSP121M2D2TRF NSP121M2D2XTRF NSP121M2D2ZTRF NSP151M2D2TRF NSP151M2D2ZTRF NSP680M2D5TRF
Contextual Info: Surface Mount Specialty Polymer Solid Aluminum Electrolytic Capacitors NSP Series FEATURES • NEW “X”, “Y” & "Z" TYPE HIGH RIPPLE CURRENT/VERY LOW ESR RoHS • LOW PROFILE 1.1MM HEIGHT , RESIN PACKAGE Compliant • REPLACES MULTIPLE TANTALUM CHIPS IN HIGH

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

0.1 J 1600 V CAPACITOR

Abstract: 7343 electrolytic cap land pattern
Contextual Info: Surface Mount Specialty Polymer Solid Aluminum Electrolytic Capacitors NSP Series FEATURES • VERY LOW ESR AND HIGH RIPPLE AT 100KHZ • FLAT TOP, LOW PROFILE 1.1MM HEIGHT , RESIN PACKAGE • REPLACES MULTIPLE TANTALUM CHIPS IN HIGH CURRENT .POWER SUPPLIES AND VOLTAGE REGULATOR APPLICATIONS

Contextual Info: Surface Mount Specialty Polymer Solid Aluminum Electrolytic Capacitors NSP Series FEATURES • NEW “X” & “Y” TYPE HIGH RIPPLE CURRENT/VERY LOW ESR • LOW PROFILE 1.1MM HEIGHT , RESIN PACKAGE • REPLACES MULTIPLE TANTALUM CHIPS IN HIGH CURRENT POWER SUPPLIES AND VOLTAGE REGULATORS

NSP220M12

Abstract: 7343 electrolytic cap land pattern
Contextual Info: Surface Mount Specialty Polymer Solid Aluminum Electrolytic Capacitors NSP Series FEATURES SURFACE MOUNT • VERY LOW ESR AND HIGH RIPPLE AT 100KHZ • FLAT TOP, LOW PROFILE 1.1MM HEIGHT , RESIN PACKAGE • REPLACES MULTIPLE TANTALUM CHIPS IN HIGH CURRENT

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power