NPT10 Search Results

ELXY

Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
Contextual Info: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz

NPT1007

Abstract: 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101 EAR99
Contextual Info: NPT1007 Datasheet Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature

sagami

Abstract: PT10R-003 PT10R-007 PT10R-009 PT10R-010
Contextual Info: nPT10 SELECTION GUIDE FOR STANDARD COILS SAGAMI Part Number PT10R-003 PT10R-007 PT10R-009 PT10R-010 Turns Ratio N1:N2:N3 18:4 18:4:9 18:4 5:1 Primary Inductance N1 mH Typ. 620 150 150 11 Connections Coil designs other than those listed in the Selection Guide are available, based on

Contextual Info: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in

NPT1012

Abstract: NPT1012B AC200BM-F2 AC200B
Contextual Info: NPT1012 Preliminary Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 20-25W P3dB CW power from 1000-2500MHz in

Contextual Info: NPT1015 Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-3.5 GHz 28V Operation Industry Standard Package

NPT1010

Abstract: a114 est J22 transistor AC360BM-F2 EAR99 JESD22-A114 JESD22-A115 49dBm nrf1 Nitron
Contextual Info: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz

Contextual Info: NPT1004 Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz • 2500MHz performance

Contextual Info: NPT1015 Gallium Nitride 28V, 50W, DC-2.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-2.5 GHz 28V Operation Industry Standard Package

Contextual Info: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in

NPT100

Contextual Info: NPT1004 Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz • 2500MHz performance

Contextual Info: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in

NPT1004

Abstract: NPT1004DR NPT1004DT NPT1004D J-162 25001-2 EAR99 JESD22-A113 JESD22-A114 2500-2700MHz
Contextual Info: NPT1004 Datasheet Gallium Nitride 28V, 45W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for pulsed, WiMAX, W-CDMA, LTE, and other light thermal load applications from DC to 4.0GHz

ATC100B101JW500X

Abstract: CAP1206 RES1210 ATC100B2R0GW500X 12061C103KAT2A ATC100B NPT1007 DTA183 RES2512 ELXY630ELL271MK25S
Contextual Info: AD-014 AD-014: Nitronex NPT1007 GaN HEMT Tuned for 500-1000 MHz Application design AD-014 with one half of a Nitronex NPT1007 GaN HEMT device outputs approximately 50 Watts of average RF power under CW conditions with approximately 9.0 to 14 dB gain, 50% drain efficiency. All measurements were collected

Contextual Info: NPT1010 Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in

PIMD3

Abstract: npT1007 TRANSISTOR J15
Contextual Info: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature

Contextual Info: NPT1012 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC-4000MHz • 25W P3dB CW power at 3000MHz • 16-20W P3dB CW power from 1000-2500MHz in

NPTB00004

Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100
Contextual Info: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for

NPT25100

Abstract: NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P
Contextual Info: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with largearea silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and broader

Avago 9886

Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes
Contextual Info: M O DE L I T HI CS EXEMPLAR LIBRARY LIBRARY USER MANUAL V11 For Agilent Technologies Advanced Design System MODELITHICS EXEMPLAR LIBRARY CONTENTS CONTENTS . 2 INSTALLATION INSTRUCTIONS . 8

NPTB00004

Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate
Contextual Info: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.

PCL6143

Abstract: matsushita stepping motors Denso 12V Dc Motor PCL6045BL Common rail piezo injector driver PPCI7443 PCL6123 Servo motor based mobile robot control PCD4500 nikki denso
Contextual Info: w w w . n i pp o np u l s e . c o m Motion Control/ Serial Communication Nippon Pulse Your Partner in Motion Control w w w . n i pp o np u l s e . c o m Motion/Serial Communication A variety of Nippon Pulse motion control chips and boards are available, including programmable pulse generators, counter chips, and high-speed

Denso 12V Dc Motor specifications

Abstract: 3 phase AC servo PANASONIC drive schematic NPT102F JPC NPT102F PCD4500 sanyo denki stepper motor PCL6045BL sanyo denki nema 23 stepping motor pin out nikki denso common rail piezo injector driver
Contextual Info: w w w . n i pp o np u l s e . c o m Motion Control/ Serial Communication Nippon Pulse Your Partner in Motion Control w w w . n i pp o np u l s e . c o m Motion/Serial Communication A variety of Nippon Pulse motion control chips and boards are available, including programmable pulse generators, counter chips, and high-speed

GaN amplifier

Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
Contextual Info: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2