NPT1010B Search Results
NPT1010B Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NPT1010B | M/A-Com | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - HEMT N-CH 28V 100W DC-2000MHZ | Original | 1.22MB |
NPT1010B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
ELXY
Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
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Original |
npt10102000mhz900mhz500-1000mhz+11 | |
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Contextual Info: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in |
Original |
npt10102000mhz900mhz500-1000mhz+3 | |
|
Contextual Info: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in |
Original |
npt10102000mhz900mhz500-1000mhz+3 | |
|
Contextual Info: NPT1010 Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in |
Original |
npt10102000mhz900mhz500-1000mhz+3 |