NPN TRANSISTOR Search Results

BFR106

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is

Contextual Info: LS3250SB NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SB is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. See Packaging Information .

Contextual Info: LS3250C MONOLITHIC DUAL NPN TRANSISTOR Linear Systems Log Conformance Monolithic Dual NPN The LS3250C is a monolithic pair of NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and is ideal for use in tracking applications.

Contextual Info: LS3250SA NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SA is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing. See Packaging Information . LS3250SA Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR93AW NPN 5 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 18 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain

BU808DF

Abstract: transistor BU808DFI BU808DFI transistor BU808DFI BU808d BU808
Contextual Info: BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY > 1400 V HIGH DC CURRENT GAIN ( TYP. 150 ) FULLY INSULATED PACKAGE (U.L.

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS CMBT8098 CMBT8099 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR SOT-23 Formed SMD Package

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL TRANSISTOR CSC2713 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3

smd TRANSISTOR 05c sot23

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION NPN 1 = BASE 2 = E M ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 ABSOLUTE MAXIMUM RATINGS

Contextual Info: 2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 32 Volts POWER 225mW FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA MECHANICAL DATA Case : SOT-23 plastic Terminals : Solderable per MIL-STD-750, Method 2026

Transistor a1244

Abstract: A827 1307 A1489 TRANSISTOR A1668
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5677 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin lead-less minimold package ORDERING INFORMATION

Dual Transistors TO-78

Abstract: IT120A
Contextual Info: IT120A MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT120A The IT120A is a monolithic pair of NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.

Contextual Info: EMD6 / UMD6N / IMD6A NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet <For DTr1(NPN)> lOutline Parameter Value VCEO IC R1 50V 100mA 4.7kW EMT6 (1) (2) (5) (4) (3) (4) Value (3) -50V -100mA 4.7kW (2) (6) (1) SMT6 Parameter

MARKING CODE SMD IC

Abstract: smd code marking v8 sot23 MARKING SMD IC CODE smd marking code BC846 NXP BC856
Contextual Info: BC846 series 65 V, 100 mA NPN general-purpose transistors Rev. 8 — 24 April 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number[1]

Contextual Info: 62 7  % BFU520X NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.

TRANSISTOR SMD MARKING CODE 2x

Abstract: NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE t8 marking code BV SMD Transistor TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE 41 BC846BMB transistor smd code marking 102 NXP SMD ic MARKING CODE
Contextual Info: 83B BC846BMB SO T8 65 V, 100 mA NPN general-purpose transistor Rev. 1 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.

PBSS5350

Abstract: PBSS4350
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4350T 50 V; 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Jan 09 NXP Semiconductors Product data sheet 50 V; 3 A NPN low VCEsat (BISS) transistor PBSS4350T FEATURES QUICK REFERENCE DATA

smd transistor marking A3

Abstract: TRANSISTOR SMD MARKING CODE 7A
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMMT493 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Code is =493

Contextual Info: EMD5 / UMD5N NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline <For DTr1(NPN)> Parameter VCC IC(MAX.) R1 R2 Value EMT6 UMT6 (6) (6) (5) (5) 50V 100mA 47kW 47kW (4) (4) (1) (1) (2) (2) (3) (3) EMD5 (SC-107C) UMD5N

Contextual Info: BD241A-A NPN power transistor Features . • This device is qualified for automotive application ■ NPN transistor Applications ■ s ct u d o Audio, general purpose switching and amplifier transistors r P e 1 2 3 TO-220 Description The devices are manufactured in Planar

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTA44 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Code is =3Z Designed for Extremely High Voltage Applications

2SC5103

Abstract: 2SC5103F5
Contextual Info: 2SC5103F5 h 7 > s 7 > $ / Transistors 2S C 5103F5 NPN b 7 > V *$ Epitaxial Planar NPN Silicon Transistor "J y^/High Switching Speed • ^ "iS @ /D im en sio n s U nit: mm • # * tf=0.1 us (Typ.) (lc=3A ) 2) VcE(sat)=.0.15V (Typ.) (IC/lB=3A/0.15A) 3) SOA

BDW 16.24K5000-C2-5

Contextual Info: 2SC D • flSBSbQS DQQMMBB T H S I E 6 ot* NPN Silicon Planar Transistors BDW 25 BDY 12 SIEMENS AKTIENGESELLSCHAF 433 0-BDY 13 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.

NTE2321

Contextual Info: NTE2321 Silicon NPN Transistor Quad, General Purpose Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V